• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.82-82
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.128-134
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• 2003

Alloys of Ti-43%Al-2%W-0.1%Si were oxidized isothermally and cyclically between $900^{\circ}C$ and$ 1050^{\circ}C$, and their oxidation characteristics were studied. During isothermal tests, the alloys oxidized slowly up to 100$0^{\circ}C$, but fast at $1050^{\circ}C$. Though the scale adherence was not good above $900^{\circ}C$, the alloys displayed better oxidation behavior than unalloyed TiAl alloys. The oxide scales consisted primarily of an outer $TiO_2$ layer, intermediate $Al_2$$O_3$-rich layer, and an inner mixed layer of (TiO$_2$ $+Al_2$$O_3$). Tungsten was present mainly at the lower part of the oxide scale, while Si over the whole oxide scale.

• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.17-25
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• 1989

The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

• Journal of Navigation and Port Research
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• v.34 no.2
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• pp.111-115
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• 2010

In this paper, the electromagnetic (EM) wave absorbers using TiO2 as a dielectric material with chlorinated polyethylene (CPE) were investigated in W-band radio frequencies. We compared the relative permittivity with reflectionless curve and the absorption properties of samples containing 40 wt.%, 50 wt.%, 60 wt.%, 70 wt.%, and 80 wt.% TiO2. It is possible to realize a complex relative permittivity satisfying the reflectionless condition by choosing composition ratio of TiO2. The optimized composition ratio of TiO2 for the maximum absorption property is about 70 wt.%. As a result, we have confirmed the realization of an EM wave absorber with a high absorption property in W-band radio frequencies.

• Journal of the Korean Chemical Society
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• v.57 no.6
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• pp.677-683
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• 2013

A theoretical study of the electronic structures of $TiC_{1-x}$ and $Ti_{1-x}W_xC$ (x = 0, 0.25) is presented. The density of states and crystal orbital overlap population calculations were used to interpret variations of elastic properties induced by carbon vacancies and alloying substitutions. Our results show why the introduction of vacancies into TiC reduces bulk moduli, while W substitution at a Ti site increases the elastic modulus. The effect of the point defects on the bonding in TiC is investigated by means of extended Huckel tight-binding band calculations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.88-91
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.634-638
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• 2004

Titanium silicalite-1 (TS-1) molecular sieve was produced by microwave heating of amorphous titanium-containing solid precursors after impregnation with aqueous TPAOH solution. $SiO_2-TiO_2$ xerogel, sub-micron sized $SiO_2-TiO_2$ prepared by thermal plasma process, and Ti-containing mesoporous silica, Ti-HMS, were tested as the solid phase substrates. Highly crystalline product was obtained within 30 min. after microwave irradiation with yields over 90% using $SiO_2-TiO_2$ xerogel, which showed essentially identical physicochemical properties to TS-1 prepared by conventional hydrothermal method. Excellent catalytic activity was also obtained for 1-hexene epoxidation using $H_2O_2.\;SiO_2-TiO_2$ particles prepared by thermal plasma and Ti-HMS were found inferior as a substrate for TS-1, probably due to difficulties in wetting the surface uniformly with TPAOH.

• Applied Chemistry for Engineering
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• v.32 no.5
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• pp.516-523
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• 2021

A study using selective catalytic reduction (SCR) was conducted in conjunction with ammonia as a reducing agent for controlling nitrogen oxides, a typical secondary inducer of fine dust in the atmosphere. For NH₃-SCR experiments, a commercial catalyst of V/W/TiO₂ only and also V/W-Sb/TiO₂ catalyst with Sb were used, and phosphorous durability was confirmed. As a result of NH₃-SCR experiments, it was confirmed that the addition of Sb to V/W/TiO₂ had durability against phosphorous. In addition, the physical and chemical properties were comparatively analyzed through BET, XPS, H₂-TPR, NH₃-TPD, and FT-IR analysis. From the anaylsis results, when Sb was added to V/W/TiO₂ catalyst, P was also added resulting in the formation of SbPO₄ and the generation of VOPO₄ was suppressed. The phosphorous durability was confirmed by maintaining the redox characteristics of the catalyst before P was added.

• Nuclear Engineering and Technology
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• v.4 no.2
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• pp.132-136
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• 1972

The mechanism for activated sintering of UO$_2$by an addition of 0.05 w/o TiO$_2$was investigated using a high temperature X-ray diffractometer. The diffraction pattern of UO$_2$pellets was studied in a temperature range from room temperature to 120$0^{\circ}C$ in hydrogen atmosphere. At 120$0^{\circ}C$, the expansion of UO$_2$lattice were 1.448% and 1.354% greater when it was compared with those at room temperature for pellets with and without the 0.05 w/o TiO$_2$addition, respectively-The effect of the TiO$_2$addition is to increase the lattice constant of UO$_2$by 0.094% at 120$0^{\circ}C$. The lattice constant at 120$0^{\circ}C$without the TiO$_2$addition is equal to that at 108$0^{\circ}C$ with the 0.05 w/o TiO$_2$addition. This temperature difference could be well compared with the suppression of sintering temperature by TiO$_2$hat had been observed Previously. It is believed that the increase in lattice expansion due to the TiO$_2$addition would give rise to the activated sintering of UO$_2$by the lattice-expansion-induced-enhancement of self diffusion.