• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.1-4
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• 1991

The applicability of $LiNbO_{3}$ as a substrate for fabrication of Ti-indiffused waveguide electro-optic devices is limited. Ti diffuses comparatively in congruently melting $LiNbO_{3}$; the Curie temperature of this material is too low to permit diffusion temperatures much above $1100^{\circ}C$ without the necessity of re-poling the crystal. Both of hese difficulties could be eliminated by incorporating certain dopants in $LiNbO_{3}$. Crystals of $LiNbO_{3}$ doped with Ti and Mg were grown and evaluated. The electroptic coefficients and birefringence of $LiNbO_{3}$ doped crystals were measured at ${\lambda}=.6328$ and $1.32\;$\mu{m}$. Curie temperatures were measured. The Curie temperature of both undoped and Ti-doped $LiNbO_{3}$ was $1130^{\circ}C$; that for Mg-doped $LiNbO_{3}$ was $30^{\circ}$ higher. From these data, a composition for the crystals was estimated. Thermogravimetric data confirmed this estimate and showed that the composition of Mg : $LiNbO_{3}$ was $49.3{\pm}0.2mole%\;Li_{2}O$ ; the composition of the undoped and Ti : $LiNbO_{3}$ samples was $48.6{\pm}0.2mole%$. Diffusion of Ti into both Mg-doped and Ti-doped $LiNbO_{3}$ crystals was studied as a function of $Li/NbO_{3}$ ratio and temperature.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Journal of KIISE:Information Networking
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• v.32 no.2
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• pp.134-146
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• 2005

Research about QoS in the ad-hoc networks for stable service of various applications has been needed as the expectation about the realization of the ad-hoc networks grows bigger. Existing researches about QoS in the ad-hoc network had the problems which can not guarantee the quantitative services or create the overhead. In this paper, we propose a novel algorithm of QFAN(QoS Framework for Ad-hoc Networks) the framework to resolve such problems and considered application of the proposed algorithm into the ad-hoc networks. Our model can guarantee the minimum bandwidth of the real-time traffic as minimized the overhead. And, disproportionate distribution of bandwidth problem can resolve by the proposed algorithm through the fair share between real-time traffic and best-effort traffic about available bandwidth. We design both the TiRe(Tiny Reservation) and the ADR(Adaptive Drop Rate) control algorithm to apply the proposed QFAN. Using simulation, we confirm fair share of available bandwidth between real-time traffic and best-effort traffic as guarantee minimum required bandwidth of real-time traffic.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.453-457
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• 2005

Piezoelectric properties of $Pb(Mn_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ ceramics were investigated with $Al_2O_3$ content $(0.0-1.0 wt\%)$. The constituent phases, microstructure, electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants were analyzed. Diffraction peaks for (002) and (200) planes were identified by X-ray diffractometer for all the specimens doped with $Al_2O_3$, indicating the MPB (morphotropic phase boundary) composition of tetragonal structures. The highest sintered density of $7.8 g/cm^3$ was obtained for $0.2wt\%\;Al_2O_3-doped$ specimen. Grain size increased by doping $Al_2O_3$ up to $0.3 wt\%$, and it decreased by more doping. Electromechanical coupling factor, dielectric constant, piezoelectric charge and voltage constants increased by doping $Al_2O_3$ up to $0.2wt\%$, and it decreased by more doping. This might result from the formation of oxygen vacancies due to defects in $O^{2-}$ ion sites and the substitution of $Al^{3+}$ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.323-323
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• 2010

PNN-PZT계 세라믹스를 $Pb(Ni_{1/3}Nb_{2/3})_{0.4}(Zr_{0.48}Ti_{0.52})_{0.6}O_3$ 조성으로 설계하고, 이에 낮은 융점의 NiO를 1wt% 첨가하여 저온소결 특성을 평가하였다. 일반적인 세라믹 분말 소결법을 이용하여 시편을 제작하였으며, 이때의 소결온도는 $850{\sim}105^{\circ}C$ 범위에서 변화시켰다. 소결체의 압전 및 유전적 특성을 평가를 하고. SEM 및 XRD를 이용한 미세구조 및 상 분석도 수행하였다. 이러한 실험 결과, PNN-PZT 세라믹은 NiO의 첨가로 $1000^{\circ}C$ 정도에서도 저온소결이 가능한 것을 확인하였다.

• Journal of the Korean Society for Heat Treatment
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• v.3 no.1
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• pp.65-69
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• 1990

Gas침탄질화처리 후 20Cr-2Ni-4A, 25Mn-Ti-B-Re, 20Cr-Mn-Ti 3가지 다성분강에서의 Ms온도를 계산하는 방법이 개발되어 왔으며, 결과적으로 각각의 gas 침탄질화층에 있는 잔류 austenite의 양이 계산될 수 있다. 이렇게 계산된 결과는 전형적인 실험 결과와 좋은 일치를 보이며, 그 예로서 En 354 강에서 침탄층을 통한 Ms 온도 분포가 계산되어진다.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.43-52
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• 2014

Recent developing tendency of thermal spray for green automotive industry are studied by searching of NDSL, KIPRIS, ScienceDirect and so on. Spraying techniques such as plasma spray, microwave treatment, dry-ice blasting, HVOF thermal spray, cold spraying, aerosol deposition are introduced, further more spraying materials such as nano particles, intermetallic compound, TiAlN, TiC, Si-Al alloys are investigated.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.202.1-202
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• 2003

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.