• Journal of Welding and Joining
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• v.29 no.1
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• pp.65-73
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• 2011

Microstructural characteristics of two high strength (600 MPa & 800 MPa) weld metals produced by flux-cored arc welding process (FCAW) were evaluated. The 600 MPa grade weld metal was consisted of 75% acicular ferrite and 25% ferrite which was formed at relatively high temperature (grain boundary ferrite, widmanstatten ferrite, polygonal ferrite). However, the 800 MPa grade weld metal was composed of about 85% acicular ferrite and 15% low temperature forming phases (bainite, martensite). The prior austenite grain size of 800 MPa grade weld metal was decreased by solute drag force. The compositions and sizes of inclusions which are the dominant factors for the formation of acicular ferrite were analyzed by a transmission electron microscopy (TEM). In both 600 MPa and 800MPa grade weld metals, the inclusions were mainly consisted of Ti-oxide and Mn-oxide, and the average size of inclusions was $0.7{\mu}m$. The 800 MPa grade weld metal exhibited higher tensile strength and similar toughness compared with the 600 MPa grade weld metal. This result is mainly due to a higher fraction of low temperature products and a lower fraction of grain boundary ferrite in the 800 MPa grade weld metal.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.438-439
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• 2013

Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

• Nuclear Engineering and Technology
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• v.52 no.6
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• pp.1201-1207
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• 2020

This study explored whether MXene (Ti₃C₂T_x) could remove radioactive Cs⁺ from model nuclear wastewater. Various adsorption tests were performed and the physical aspects of the interaction were investigated. We varied the MXene dosage, Cs⁺ initial concentration, solution pH, solution temperature and exposure time. MXene adsorption exhibited very fast kinetics, based on the fact that equilibrium was achieved within 1 h. MXene exhibited an outstanding adsorption capacity (148 mg g^-1) at adsorbent and adsorbate concentrations of 5 and 2 mg L^-1, respectively, at neutral pH condition (i.e., pH 7). We explored Cs⁺ adsorption by MXene in the presence of four different ions (NaCl, KCl, CaCl₂ and MgCl₂) and three different organic acids (sodium oleate, oxalic acid, and citric acid). The Cs⁺ removal rate changed in the presence of these components; adsorption of Cs⁺ by MXene thus involved ion exchange, supported by both Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy. We confirmed that MXene was re-usable for at least four cycles. MXene is cost-effective and practical when used to adsorb radionuclides (e.g., Cs⁺) in nuclear wastewater.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.359-360
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• 2013

The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.53-59
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• 1999

The ceramic capacitor was fabricated by $(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ + ZnO(from 0.1 to 0.4 mol ratio). The electrical and structural properties of ceramic capacitor for high voltage application was studied in this study. The relative rensity of ceramics capacitor has shown high in all specimen. The grain was a small size from $1.0[\mum]$ to $1.22[\mum]$ and it was increased with ZnO at 0.3 mol ratio. It was stabilized that the temperature coefficient of ceramic capacitor to change temperature had below 100[ppm] at 0.12~10[kHz]. The dielectric reIaxation time was decreased by interface polarization over $110[^{\circ}C]$ and it was increased by space polarization of paraelectric layer below $110[^{\circ}C]$. The insulating layer was increased with ZnO and dielectric constant to voltage was stabilized by 0.1[%].0.1[%].

• Journal of Korean Society of Environmental Engineers
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• v.22 no.2
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• pp.265-277
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• 2000

Laboratory experiments were conducted to investigate characteristics for removing ammonia-nitrogens by electrolysis methods. A stainless steel plate is used as the cathode and either $IrO_2{\backslash}Ti$ plate serves as the anode. Experiments were conducted to examine the effects of the operating conditions, such as the current density, retention time, electrode gap, $Cl^-/NH_4{^+}-N$ on the $NH_4{^+}-N$ removal efficiency. Possible optimum range for these operating variables are experimentally determined. The $NH_4{^+}-N$ removal efficiencies between plate type anode and net type anode were about same effect, but electrolytic power using net type anode is low than plate type anode. The $Cl^-/NH_4{^+}-N$ ratio was about $20.0kgCl^-/kgNH_4{^+}-N$ when $NH_4{^+}-N$ removal obtained 73 %, $Cl^-/NH_4{^+}-N$ ratio needs $27.6kgCl^-/kgNH_4{^+}-N$ so as to $NH_4{^+}-N$ completely remove. The removal efficiency of $NH_4{^+}-N$ increase with current density, retention time and $Cl^-/NH_4{^+}-N$ ratio, but decreased with increasing electrode gap. The relationship of operating conditions and $NH_4{^+}-N$ removal efficiencies are $$NH_4{^+}-N_{re}(%)=14.5364(Current\;density)^{0.7093}{\times}(HRT)^{1.0060}{\times}(Gap)^{-0.9926}{\times}(Cl^-/NH_4{^+}-N)^{1.0024}$$ With adding COD or/and alkalinity, relationships are $$NH_4{^+}-N_{re}(%)=9.8408(Current\;density)^{0.6232}{\times}(HRT)^{1.0534}$$ There existed a competition between the removals for $NH_4{^+}-N$ and $COD_{Cr}$ during electrolysis, the removal of $NH_4{^+}-N$ was shown to be dominant. $NH_4{^+}-N$ removal was high as addition of glucose and alkalinity.

• Journal of Magnetics
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• v.13 no.2
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• Nuclear Engineering and Technology
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• v.52 no.3
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• pp.647-653
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• 2020

Stainless steel is used commonly in nuclear applications for shielding radiation, so in this study, three different types of new stainless steel samples were designed and developed. New stainless steel compound ratios were determined by using Monte Carlo Simulation program Geant 4 code. In the sample production, iron (Fe), nickel (Ni), chromium (Cr), silicium (Si), sulphur (S), carbon (C), molybdenum (Mo), manganese (Mn), wolfram (W), rhenium (Re), titanium (Ti) and vanadium (V), powder materials were used with powder metallurgy method. Total macroscopic cross sections, mean free path and transmission number were calculated for the fast neutron radiation shielding by using (Geant 4) code. In addition to neutron shielding, the gamma absorption parameters such as mass attenuation coefficients (MACs) and half value layer (HVL) were calculated using Win-XCOM software. Sulfuric acid abrasion and compressive strength tests were carried out and all samples showed good resistance to acid wear and pressure force. The neutron equivalent dose was measured using an average 4.5 MeV energy fast neutron source. Results were compared to 316LN type stainless steel, which commonly used in shielding radiation. New stainless steel samples were found to absorb neutron better than 316LN stainless steel at both low and high temperatures.

• Proceedings of the Korean Information Science Society Conference
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• 2012.06b
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• pp.95-97
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• 2012

OMG(Object Management Group)의 데이터 분배 서비스(DDS: Data Distribution Service)는 발간(publish)/구독(subscribe) 모델에 기반하여 동일한 타입의 데이터를 실시간으로 주고 받는 데이터 중심의 분산 환경에서 많이 사용되는 통신 미들웨어 기술이다. 하지만 DDS는 실시간으로 발생하는 데이터에 대하여 일회성인 특징을 갖기 때문에 추후 데이터에 대한 분석, 검증 등을 위해 영속성을 제공할 필요성이 증대되고 있다. 이러한 추세를 반영하듯 RTI DDS, PrismTech Opensplice 등의 대표적인 DDS 시스템에서는 데이터베이스를 연동하기 위한 연구를 진행하고 있다. 실시간 통신 미들웨어인 DDS와 데이터베이스의 연동은 DBMS 애플리케이션이 일반적으로 데이터베이스를 사용하는 것뿐만 아니라 DDS의 시맨틱을 알지 못하더라도 데이터 중심의 발간/구독 모델을 유기적으로 활용할 수 있는 장점을 지닌다. 본 논문에서는 이를 위해 DDS 시스템인 DB-ReTiCom의 데이터베이스를 사용하기 위한 커넥티비티를 제안하고 사용자 친화적 인터페이스를 위한 변환 방법을 제시한다.