• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.165-173
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• 1984

It is desirable to establish reliable synthetic methods for electro-ceramic materials. To synthesize $SrTiO_3$ in this study direct solid state reactions and wet chemical processes were used. Previous study of $SrTiO_3$ synthesis included oxalated-method($SrTiO(C_2O_4)_2$.$4H_2O$) co-precipitation$(SrCO_3+TiO(OH)_2)$ and direct solid state reaction$(SrCO_3+TiO(OH)_2)$ The methods in question lead to intermediate inclusion during the reactions and less controllable in particle sizes of $SrTiO_3$. To obtain highly pure $SrTiO_3$ so-called "direct wet process method" was added in this investigation. In the study the "direct wet process" was for the first time applied to synthesize chemically pure and fine particle $SrTiO_3$. $SrCl_2$ and $TiCl_4$<\ulcornerTEX> at KOH solution at room temperature to 10$0^{\circ}C$ precipitated $SrTiO_3$ The particle size increased as temperature increased.mperature increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.843-846
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02∼0.08) ceramics were fabricated by conventional mixed oxide method. The sintering temperature and time were 1250$^{\circ}C$∼1400$^{\circ}C$, 2hr., respectively. The structural and microwave dielectric properties were investigated by varying sintering temperature and composition ratio. In the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.02) ceramics, the cubic SrTiO$_3$and hexagonal MgTiO$_3$phases were coexisted. The dielectric constant was increased and the temperature coefficient of resonant frequency( $\tau_f$) was decreased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau_f$) was gradually varied from negative value to positive value with increasing the SrTiO$_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.6
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• pp.495-500
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• 2009

The ceramic($BaTiO_3$)-polymer(epoxy) composites have been widely investigated as dielectric materials for embedded capacitors in printed circuit boards (PCBs). The dielectric properties of $BaTiO_3$/epoxy composites prepared using the agglomerated $BaTiO_3$ particles were investigated in the present study. The dielectric constants of the composites prepared using the agglomerated $BaTiO_3$ particles were about 2 times higher than those of the composites with the dispersed $BaTiO_3$ particles. The insulation resistance of the composites prepared using the agglomerated $BaTiO_3$ particles were lower than those of the composites with dispersed $BaTiO_3$ particles. As a result, there is tradeoff between high dielectric constant and insulation resistance in the $BaTiO_3$/epoxy composites. So it is important to select proper agglomerated or dispersed $BaTiO_3$ particles in accordance with needs.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.49-54
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• 1998

$BaTiO_3$ fine particles were synthesized by hydrothermal method. $TiO_2$ and $Ba(OH)_2{\cdot}8H_2O$ were used as staring materials, and it was possible to synthesize $BaTiO_3$ fine particles in pure water by using excess $Ba(OH)_2{\cdot}8H_2O$. The shape of synthesized particles are irregular but near spherical, and the particle size depends on the temperature and Ba/Ti atomic ratio.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.503-507
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• 1998

Sintering behavior and dielectric peroperties of $xCaTiO_3-La(Zn_{1/2}Ti_{1/2})O_3$ system were investigated for better understanding of the microwave dielectric materials. In $xCaTiO_3-(1-x)La(Zn_{1/2}Ti_{1/2})O_3$ systems, solid solution type was focused as a function of composition(x=0.4-0.6) and sintered density. With increasing the sintered density, the relative dielectric constant was decreased and Q value was increased and then saturated. In solid solution type, dielectric constant was increased with increasing $CaTiO_3$ content. In $0.5\;CaTiO_3-0.5\; La(Zn_{1/2}Ti_{1/2})O_3$ case, dielectric constant(=48) and temperature coefficient of resonace frequency$(=-1 ppm/^{\circ}C$) were obtained.