• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.80-84
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• 2015

We investigated the dielectric relaxation properties $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics with CuO addition. With increasing CuO addition, the lattice parameter was increased by substitution of small amount $Cu^{2+}$ ion in B-site of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics. Also the grain size and the maximum dielectric constant of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was decreased with increasing amounts of CuO addition. Moreover, the diffused phase transition properties (${\gamma}$) of $0.5Ba(Zr_{0.2}Ti_{0.8})O_3-0.5(Ba_{0.7}Ca_{0.3})TiO_3$ ceramics was increased by compositional fluctuation with increasing of CuO amount, changed from 1.45 at 1 wt% CuO addition to 1.94 at 7 wt% CuO addition.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• 한국세라믹학회지
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• 제30권6호
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• 한국재료학회지
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• 제1권4호
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• pp.206-213
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• 1991

PbO 77-80wt%, ZnO 4.5-6wt%, $B_2O_3$ 7.5-8.5wt%, $TiO_2$ 3-7wt%, $P_2O_5$ 0.5-2wt%의 조성을 갖는 IC Package봉착용 저융점($400-460^{\circ}C$) 결정화유리 frit를 제조하였다. DTA-TMA, X-선 회절분석, SEM 등을 이용하여 봉착용 유리의 결정화 특성을 연구하였다. $TiO_2$ 함량이 3wt% 함유시료는 $420-440^{\circ}C$에서 $2PbO{\cdot}ZnO{\cdot}B_2O_3$의 결정이 균일성장하였다. $TiO_2$ 함량이 4wt% 첨가된 시료는 $420-440^{\circ}C$에서 $2PbO{\cdot}ZnO{\cdot}B_2O_3와\;PbTiO_3$ 결정이 섞여서 혼합결정을 이루고 있었다. 또한 $TiO_2$ 5wt% 첨가된 시료는 $440-460^{\circ}C$에서 perovskite $PbTiO_3$ 결정만 석출되었다.

• 한국세라믹학회지
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• 제22권4호
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• 한국재료학회지
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• 제2권3호
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• pp.207-212
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• 1992

과잉의 CaO와 $TiO_2$를 각각 포함한 $CaTiO_3$의 결함구조를 평형상태의 전기전도도를 $85O^{\circ}C$와 $1050^{\circ}C$사이에서 산소분압의 함수로 측정하여 연구하였다. 과잉의 CaO는 A site와 B site에 나누어져서 용해되어 $Ca_{Ti}$"와 Vo", 결함을 생성하였으며, 과잉의 $TiO_2$는 $V_{Ca}$"과 Vo"을 생성했다. 평형상태의 전기전도도는 CaO 용해도 5000ppm과 $TiO_2$ 용해도 2000ppm을 각각 나타냈다. 과잉의 양이온에 의하여 생성된 산소공공은 이온전도를 하여 넓은 영역의 산소 분압에 무관한 전도도 최소값을 보였으며, 반대로 대전된 음이온 결함과 결함쌍은 관찰되지 않았다.온 결함과 결함쌍은 관찰되지 않았다.

• 한국결정성장학회지
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• 제8권4호
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• pp.567-572
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• 1998

아크 용융을 사용하여 예비 건조된$La_2O_3,\;V_2O_3,\;TiO_2$,Ti의 혼합물로부터 제조된$LaTi_{0.8}V_{0.2}O_3$ 고용체의 결정구조를 투과전자현미경과 컴퓨터 이미지 시뮬레이션을 이용하여 연구하였다. 컴퓨터 이미지 시뮬레이션은 multislice 방법으로 여러 시편 두께와 초점 거리에서 실시하였다. $LaTi_{0.8}V_{0.2}O_3$ 의 결정구조는 Pnma 공간군을 가진 GdFeO3 형태의 사방정계$(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$로 결정되었다. $LaTi_{0.8}V_{0.2}O_3$에서 Ti와 V 원자의 규칙화에 대한 증거를 찾아 볼 수 없었다.

• 한국결정성장학회지
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• 제1권1호
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• pp.107-116
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• 1991

초음파 진동자를 사용 분무 열분해시켜 $Pb(NO_3)_2$와 $TiO(NO_3)_2$ 용액으로부터 $PbTiO_3$ 미분말을 합성하고 미립자의 특성을 조사하였다. 또한 미립자 형성과정을 같은 방법으로 합성되어 문헌에 보고된 $BaTiO_3$, $ZrO_2$, ZnO 등의 미립자 형성과정과 비교 검토하였다.

• 대한전기학회논문지
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• 제45권2호
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• pp.235-241
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• 1996

In this paper dielectric and electrostrictive strain properties of (1-y-x)Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$-PbTiO$_{3}$$-yPbTiO_{3}-xSrTiO_{3}[(1-y-x)PMN-yPT-xST]$ ceramics fabricated by using columbite precursor method have been investigated with the substitution of SrTiO$_{3}$(ST). Dielectric constant of the specimens increased with the increase of ST content up to 5[m/o] and decreased with further substitution of ST. And the pyrochlore phase decreased with the increase of ST content up to 5[m/o] in XRD analysis. The elimination of the pyrochlore phase improved dielectric constants. The electrostrictive strains generated by AC electric field have the highest value at 5[m/o] SrTiO$_{3}$ addition and the hysteresis of strain ranged from 12 to 20[%]. The electrostrictive strain at various temperature investigated in the temperature range of $-50[^{\circ}C]~74[^{\circ}C].$ In higher temperature than phase transition region, it showed paraelectric property which shows very small hystersis.

• 한국세라믹학회지
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• 제34권6호
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• pp.583-590
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• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.