• Title/Summary/Keyword: TiO2-doped

검색결과 643건 처리시간 0.028초

$Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$계 세라믹스의 강유전성 (Ferroelectricity of the $Pb(Sc_{1/2}Nb_{1/2}$O$_3$-$PbTiO_3$ based Ceramics)

  • 김진수;김소정;김호기;이덕출
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.149-152
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    • 1997
  • High-power piezoelectric materials are being developed for applications such as actuators and ultrasonic motors. In this paper, ferroelectric property of iron-doped 0.57 (Sc$_{1}$2//Nb$_{1}$2/)O$_3$-0.43 PbTiO$_3$. which is the morphotropic phase boundary composition for the PSN-PT system, was investigated. The maximum dielectric constant ( $\varepsilon$$_{33}$/$\varepsilon$$_{0}$ = 2551) and the minimum dielectric loss(tan $\delta$ = 0.51 %) at room temperature were obtained at 01. wt% and 0.3 wt% of iron additions. With additions of the Fe$_2$O$_3$ the electromechanical coupling factor of radial mode k$_{p}$ and the piezoelectric coefficient d$_{33}$ were slightly decreased, on the other hand the mechanical quality factor was increased significantly. The highest mechanical quality factor (Qm= 297) was obtained at 0.3 wt% Fe$_2$O$_3$, which is 4.4 times larger than that of pure 0.57 PSN-0.43PT ceramics. The temperature dependence of the dielectric constant and dielectic loss was observed between 2$0^{\circ}C$ and 35$0^{\circ}C$ .X> .X> .

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Microstructural Analysis on $UO_2$ and $UO_2$-4wt% $CeO_2$ by Using Additives in Reducing and Oxidizing Atmospheres

  • Kim, Han-Soo;Kim, Si-Hyung;Lee, Young-Woo;Na, Sang-Ho
    • Nuclear Engineering and Technology
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    • 제28권5호
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    • pp.458-466
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    • 1996
  • The effects of dopants on the modification of microstructure of UO$_2$ and UO$_2$-4wt%CeO$_2$ sintered pellets have been studied in hydrogen and $CO_2$/CO mixture atmospheres by using $Ta_2O_5$, TiO$_2$ and $Nb_2O_5$ as sintering additives. The dopant were added as oxide powders and homogenized by attrition milling. The mixed powders were pressed, and then sintered in hydrogen at 1$700^{\circ}C$ , or in oxidizing atmosphere using Controlled $CO_2$/CO mixtures at 125$0^{\circ}C$. Both density and microstructure of UO$_2$ are modified by the addition of dopants in reducing atmosphere. The sintered density is increased with $Ta_2O_5$ addition up to 0.33wt% and subsequently decreased with higher content of the additive. The effect on the densification and the gain growth are apparent with the addition of 0.24wt% $Nb_2O_5$. With 0.lwt% titania and 0.6wt% $Ta_2O_5$, the sintered density is decreased, but the grain size is increased. In oxidizing atmosphere, the grain sizes for UO$_2$ doped with the above additives are smaller than that for pure UO$_2$. The grain size of Ta or Nb-doped UO$_2$ is decreased with increasing $CO_2$/CO ratio, but that of pure UO$_2$or T-doped UO$_2$ is increased. A large portion of second phases is observed in UO$_2$ doped with 0.lwt% TiO$_2$ sintered in hydrogen atmosphere, while, in $CO_2$/CO atmospheres, the second phases or dopant agglomerates are not observed. For UO$_2$-4wt%CeO$_2$ mixed oxide, the effect of additives on the gain growth is not so much as that for the pure UO$_2$. This is attributed to the formation of clusters by dopant cations and Ce ions, so that the additives contribute to a lesser exent to the grain growth for the mixed oxide.

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$BaTiO_3$계 PTC 재료에서 입계 modifier의 역할 (The role of grain boundary modifier in $BaTiO_3$ system for PTCR device)

  • 이준형;조상희
    • 한국재료학회지
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    • 제3권5호
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    • pp.553-561
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    • 1993
  • 본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_2O_3$를 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 $BaTiO_3$PTCR 재료에 $Bi_2O_3$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_2O_3$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 $Y-BaTiO_3$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다. $Bi_2O_3$의 첨가량에 따라 계내에 존재하는 각 이온의 반경, 결함 반응식 및 격자 탄성 변형 에너지 등을 고려하면 $Y-BaTiO_3$결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 $BaTiO_3$에 고용이 되지 않는 것으로 밝혀졌으며 $B_2O_3$를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로써 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

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염료감응형 태양전지의 전자재결합 방지를 위한 균일한 TiO2 차단층의 제조 (Fabrication of Uniform TiO2 Blocking Layers for Prevention of Electron Recombination in Dye-Sensitized Solar Cells)

  • 배주원;구본율;이태근;안효진
    • 한국분말재료학회지
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    • 제25권1호
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    • pp.1-6
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    • 2018
  • Uniform $TiO_2$ blocking layers (BLs) are fabricated using ultrasonic spray pyrolysis deposition (USPD) method. To improve the photovoltaic performance of dye-sensitized solar cells (DSSCs), the BL thickness is controlled by using USPD times of 0, 20, 60, and 100 min, creating $TiO_2$ BLs of 0, 40, 70, and 100 nm, respectively, in average thickness on fluorine-doped tin oxide (FTO) glass. Compared to the other samples, the DSSC containing the uniform $TiO_2$ BL of 70 nm in thickness shows a superior power conversion efficiency of $7.58{\pm}0.20%$ because of the suppression of electron recombination by the effect of the optimized thickness. The performance improvement is mainly attributed to the increased open-circuit voltage ($0.77{\pm}0.02V$) achieved by the increased Fermi energy levels of the working electrodes and the improved short-circuit current density ($15.67{\pm}0.43mA/cm^2$) by efficient electron transfer pathways. Therefore, optimized $TiO_2$ BLs fabricated by USPD may allow performance improvements in DSSCs.

질소도핑 메조다공성 산화티타늄 나노입자의 합성 및 리튬이온전지 음극재로의 적용 (Synthesis and Electrochemical Properties of Nitrogen Doped Mesoporous TiO2 Nanoparticles as Anode Materials for Lithium-ion Batteries)

  • 윤태관;배재영;박성수;원용선
    • 청정기술
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    • 제18권2호
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    • pp.177-182
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    • 2012
  • Tri-block copolymer를 유연 템플레이트로 사용한 수열합성법에 의해 메조다공성 아나타제상 $TiO_2$ 나노입자를 합성하였다. 합성된 $TiO_2$ 재료는 $230m^2/g$의 매우 큰 표면적을 가졌으며 6.8 nm의 기공크기와 0.404 mL/g의 기공부피를 보였다. 리튬이 온전지 음극재로서의 가능성을 확인하기 위해 코인셀 테스트를 실시하였는데 0.1 C에서 240 mAh/g의 방전 용량을 얻었으며 이는 LTO ($Li_4Ti_5O_{12}$)의 이론 방전 용량인 175 mAh/g 보다 훨씬 큰 값이었다. 비록 C-rate가 증가함에 따라 용량이 감소하는 모습을 보였으나 메조다공성 $TiO_2$ 재료는 리튬 이온이 침투할 수 있는 큰 표면적을 제공할 수 있다는 면에서 여전히 리튬 이온전지의 음극재로서 가능성이 있다. 추가적으로 질소를 도핑하여 $TiO_2$ framework 내의 전자 이동을 향상시킴으로써 C-rate 증가에 따른 용량 감소를 일부 제어할 수 있음을 확인하였다.

TiO2 전극의 소결 온도에 따른 DSSCs의 전기적 특성 및 AFM 형상 비교 (Comparison of Electrical Properties and AFM Images of DSSCs with Various Sintering Temperature of TiO2 Electrodes)

  • 김현주;이동윤;이원재;구보근;송재성
    • 한국전기전자재료학회논문지
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    • 제18권6호
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    • pp.571-575
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    • 2005
  • In order to improve the efficiency of dye-sensitized solar cell (DSSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature$(350\;to\;550^{\circ}C)$. $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSSCs were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). Below sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively lower due to lower open circuit voltage. Oppositely, above sintering temperature of $500^{\circ}C$, efficiency of DSSCs was relatively higher due to higher open circuit voltage. In both cases, lower fill factor (FF) was observed. However, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSSCs were mutually complementary, enhancing highest fill factor and efficiency. Such results can be explained in comparison of surface morphology with schematic diagram of energy states on the $TiO_2$ electrode surface. Consequently, it was considered that optimum sintering temperature of a-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

Effect of Internal Bias Field on Poling Behavior in Mn-Doped Pb(Mg1/3Nb2/3)O3-29 mol%PbTiO3 Single Crystal

  • Lee, Geon-Ju;Kim, Hwang-Pill;Lee, Ho-Yong;Jo, Wook
    • 한국전기전자재료학회논문지
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    • 제34권5호
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    • pp.382-385
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    • 2021
  • Electrical poling is a crucial step to convert ferroelectrics to piezoelectrics. Nevertheless, no systematic investigation on the effect of poling has been reported. Given that the poling involves an alignment of spontaneous polarization, the condition for poling should be different when a material has an internal bias field that influences the domain stability. Here, we present the effect of poling profile on the dielectric and piezoelectric properties in Mn-doped Pb(Mg1/3Nb2/3)O3-29 mol%PbTiO3 single crystal with an internal bias field. We showed that both the dielectric permittivity and the piezoelectric coefficient were further enhanced when the poling procedure ends with a field application along the opposite direction to the internal bias field. We expect that the current finding would give a clue to understanding the true mechanism for the electrical poling.

Dielectric and Pyroelectric Properties of Dy-doped BSCT Thick Films by Screen-printing Method

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill
    • Journal of Electrical Engineering and Technology
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    • 제4권4호
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    • pp.527-530
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    • 2009
  • $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

A-site Sr 및 B-site Ca 첨가 BaTiO$_3$ 세라믹스의 유전특성 (Effects of A-Site Sr and B-Site Substitution on the Dielectric Properties of BaTiO3 Ceramics)

  • 박재관;오태성;김윤호
    • 한국세라믹학회지
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    • 제28권9호
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    • pp.689-695
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    • 1991
  • Dielectric properties of Ba1-$\chi$Sr$\chi$Ti1-yCayO3-y ceramics, where Sr and Ca were doped to Ba-site and Ti-site within the range of 0 x 0.24 and 0 y 0.05, respectively, were investigated. The substitution of Ca for Ti, which maintained the high resistivity of these formulations after sintering in a reducing atmosphere, was confirmed. Ca addition decreased the tetragonality c/a, increased the unit cell volume, and lowered Curie temperature, which were attributed to the occupancy of Ca2+ ions on Ti-sites. The lowering of Curie temperature by Ca addition was affected by the substitution of Sr for Ba-site; within 2 mol% of Ca, Curie temperature was lowered at a rate of 2$0^{\circ}C$ and 16$^{\circ}C$ per mol% of Ca at x=0 and x=0.08, respectively. Whereas the resistivity of the formulations without Ca was reduced to 107 {{{{ OMEGA }}cm, when sintered at low oxygen partial pressure of 10-9 MPa, the resistivity value higher than 1011 {{{{ OMEGA }}cm was maintained for the formulations containing Ca more than 0.5 mol%. Dielectric loss factor, tan$\delta$, was about 1% for most formulations.

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BaTiO3 PTC 써미스터의 미세구조 및 전기적 특성에 대한 SiO2 영향 (The Effect of SiO2 on the Microstructure and Electrical Properties of BaTiO3 PTC Thermistor)

  • 전명표
    • 한국전기전자재료학회논문지
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    • 제26권1호
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    • pp.22-26
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    • 2013
  • PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.