• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.181-186
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• 1997

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown MgO layers on a TiC(001). The hetero-epitaxial MgO layer was able to be deposited by thermal evaporation of magnesium onto the TiC(001) surface and subsequent exposure of oxygen at room temperature. A slight heating of the substrate at around $300^{\circ}C$ was necessary to overcome a thermal barrier for the ordering. The well-ordered MgO structure was confirmed with the 1$\times$1 LEED pattern. TOF-ICISS was useful in studying interface structure between oxide and substrate. The results revealed that the MgO layer is formed at the on-top sites of the TiC(001) substrate and the lateral lattice constant of MgO layer is the same as that of the TiC substrate. The MgO was deposited within two layers on the most parts of the surface.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.305-307
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• 2009

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.403-409
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• 1992

The titania membrane thickness coated on the porous alumina support by the sol-gel method was analyzed using the slipcasting model. The thickness of calcined membrane layers increased linearly from 1.3 to 3.8 ${\mu}{\textrm}{m}$ with the square root of the dipping time (4~40 min). Growth rates of the thickness of wet gels and calcined layers were well described quantitatively by the slipcasting model. Through the regression of experimental data using model equations, the permeability and the pressure drop across wet gels, and the thickness and their growth rate constants of wet gels and calcined layers could be determined. It was also known that the gellation concentration of the TiO2 sol used in this work and the porosity of wet gel layes were 25 mol/ι and 0.53, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.384-388
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• 2015

We prepared blocking layers by adding 0.0 ~ 0.6 wt% nano diamond blends (DBs) to $TiO_2$ blocking layers to improve the energy conversion efficiencies (ECEs) of dye sensitized solar cells (DSSCs). TEM and micro-Raman spectroscopy were used to characterize the microstructure and phases of DBs, respectively. Optical microscopy and FE-SEM were used to analyze the microstructure of the $TiO_2$ blocking layer with DBs. UV-VIS-NIR spectroscopy was used to determine the absorbance of the working electrodes. A solar simulator and a potentiostat were used to determine the photovoltaic properties and the impedance of the DSSCs with DBs. From the results of the DBs analysis, we determined a 6.97 nm combination of nano diamonds and graphite. We confirmed that ECE increased from 5.64 to 6.48 % when the added DBs increased from 0.0 to 0.2 wt%. This indicates that the effective surface area and electron mobility increased when DBs were added to the $TiO_2$ blocking layer. Our results indicate that the ECE of DSSCs can be enhanced by adding an appropriate amount of DBs to the $TiO_2$ blocking layers.

• Journal of the Korean Ceramic Society
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• v.24 no.3
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.310.2-310.2
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• 2013

For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

• Applied Chemistry for Engineering
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• v.28 no.4
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• pp.375-382
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• 2017

In the present review, we provide an overview of the research trend of anodic $TiO_2$ nanostructures. To date, most anodic $TiO_2$ nanostructure formation has focused on the fluoride ion electrolyte system to form nanotube layers. Recently, a novel approach that describes the formation of thick, self-organized $TiO_2$ nanostructures was reported. These layers can be prepared on Ti metal by anodization in a hot organic/$K_2HPO_4$ electrolyte. This nanostructure consists of a strongly interlinked network of nanosized $TiO_2$, and thus provides a considerably higher specific surface area than that of using anodic $TiO_2$ nanotubes. This review describes the formation mechanism and novel properties of the new nanostructures, and introduces potential applications.

• Journal of Powder Materials
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• v.23 no.2
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• pp.102-107
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• 2016

We demonstrate the electrochromic properties of $TiO_2$ nanotubes prepared by an anodization process and investigate the effects of heat treatment and viologen incorporation on them. The morphology and crystal structure of anodized $TiO_2$ nanotubes are investigated by scanning electron microscopy and X-ray diffraction. As-formed $TiO_2$ nanotubes have straight tubular layers with an amorphous structure. As the annealing temperature increases, the anodized $TiO_2$ nanotubes are converted to the anatase and rutile phases with some cracks on the tube surface and irregular morphology. Electrochemical results reveal that amorphous $TiO_2$ nanotubes annealed at $150^{\circ}C$ have the largest oxidation/reduction current, which leads to the best electrochromic performance during the coloring/bleaching process. Viologen-anchored $TiO_2$ nanotubes show superior electrochromic properties compared to pristine $TiO_2$ nanotubes, which indicates that the incorporation of a viologen can be an effective way to enhance the electrochromic properties of $TiO_2$ nanotubes.