• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.18-21
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• 1996

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.166-166
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• 2003

Si (100) 기판위에서 에피텍셜하게 자란 CoSi$_2$층은 우수한 열적안정성, 낮은 junction leakage, ultra-Shallow junction형성 등의 장점으로 인하여 많은 주목을 받아왔다. 그래서 에피텍셜 CoSi$_2$층을 형성하기 위한 많은 방법들이 보고되어 왔다. 그 방법으로는 Ti나 TiN층을 이용한 interlayer mediated epitaxy, Co의 제한적 공급을 통한 molecular beam epitaxy와 molecular beam allotaxy, 그리고 금속유기소스를 이용한 반응성화학기상증착법등이 있다. 하지만 이 방법들은 복잡한 증착공정과 열처리 후 잔류층 제거의 어려움등을 가지고 있다. 본 연구는 일반적으로 사용되는 Ti나 oxide의 중간층없이 에피층을 형성시키는 새로운 방법으로 CO-O-N 박막으로부터 열처리에 의해 확산된 Co로부터 CoSi$_2$에피층을 형성시켰다.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.361-366
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• 2010

Purpose: HCD ion plating apparatus by hollow cathod discharge method was fabricated and TiN films were deposited on stainless steel by this apparatus with increasing in $N_2$ gas flow and the fine color changes of TiN films were analyzed. Methods: The spectroradiometer and spectrophotometer were used to observe optically the fine color changes of TiN thin films, and XPS was used to analyze the compositions of TiN thin films with increasing in $N_2$ gas flow. Results: The color coordinate of TiN thin film with $N_2$ 120 sccm gas flow showed (0.382, 0.372) which had the mixed colors of gold and silver, and the color coordinate changed to the increasing value of (x,y) with increasing in $N_2$ gas flow which indicated the deep gold color. It was found that the slopes of the reflectances at 550nm were increased with increasing in $N_2$ gas flow. And from the Ti scans using XPS, it was found that the peak heights of 455 eV derived from TiN composition were increased with increasing in $N_2$ gas flow, while the peak heights of 459 eV from $TiO_2$ composition were decreased. Conclusions: The results obtained above were that the color of TiN film with 120 sccm $N_2$ gas flow had been observed from the mixed color of silver and gold due to TiC, $N_2$, TiN on the surface and TiN, $N_2$ inside film, and the color of TiN films changed a deep gold color with increasing in $N_2$ gas flow due to increasing TiN composition.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.1
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• pp.75-78
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• 2002

Thirty three layer $TiO_2/SiO_2$ coating mirrors with high reflectance through a 620~820nm wavelength range have been designed and fabricated by electron beam evaporation method. Multilayer films were deposited on glass(BK7) and sequentially. The high reflector design is based on alternating high and low refractive index layers. $n_H$ and $n_L$ such that a "stopband"(or area of high reflectivity) is created that is centered around the design wavelength. ${\lambda}_0$. The measured transmittance spectrum with an incident wavelength at an incident angle of $40^{\circ}{\pm}7^{\circ}$ exhibited a reflectance of 99.9% at the wavelength of 620~820nm but high peak transmittance in the wavelength region from 700 to 740nm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.94.1-94.1
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• 2017

최근 공구산업은 산업 발전으로 특수합금들이 발달하면서 이를 가공할 수 있는 새로운 절삭공구소재들이 개발되어 지고 있다. 또한 공구소재보다 코팅개발이 상대적으로 더욱 효과적이기 때문에 코팅 기술 개발이 활발히 진행되고 있다. 최근 일본에서는 새로운 코팅층 물질 개발보다는 기존의 코팅물질을 조합하거나 개량하여 성능을 향상시키는 추세이다. 또한 다기능 절삭 공구를 지속적으로 사용하는 추세에 따라 공구설계의 새로운 솔루션이 요구된다. 예를 들어 TiN 코팅과 추가 요소를 합금하면 효과적인 경도, 내마모성 등을 향상시키며, TiAlN, TiSiN 등을 예로 들 수 있다. 반면, 기존 TiN에 Mo가 첨가된 TiMoN 박막은 특성화하기 위한 노력이 매우 제한적이었다. Mo가 함유된 코팅층의 특징은 낮은 마찰 계수를 갖는다. 이는 Mo이 공기중의 산소와 반응하여 MoO3를 형성하기 때문이다. 본 연구에서는 TiMo합금 타겟을 음극 아크 증착공정을 이용하여 기초실험을 진행하고 분석평가를 진행하였다. 공정조건은 본 실험실에서 도출한 TiN의 기본공정조건을 바탕으로 기초실험을 진행하였으며, 시편은 스테인리스 강판(SUS304)을 사용하였다. 기초분석은 SEM, EDS, XRD, 초미소경도를 이용하였다. 처음 TiMo합금 타겟을 이용하여 기초실험과 분석을 진행한 결과 TiN과 비슷할 것으로 예상한 것과는 다른 결과가 관찰되었으며, 최적화 된 공정도출을 위한 향후 실험을 계획중이다.

• Journal of the Microelectronics and Packaging Society
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• v.1 no.2
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• pp.113-124
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• 1994

MOD법을 마이크로회로용 티탄산 바륨 콘덴서 박막형성에 적용하였다. Barium decanoate barium 2-ethylhexanoate titanium dimethoxy didecanoate 및 titanium dimethoxy di-2-ethylhexanoate와 같은 여러 가지 금속유기화합물들을 합성하고 동정한 다 음 공통용매에 대한 용해도를 시험하였다. 이금속유기화학물들 가운데 barium 2-ethylhexanoate와 titanium dimethoxy di-2-ethylhexanoate가 xylene-pyridine 혼합용매에 잘녹고 MOD법에 의한 BaTiO3 박막형성에 매우 안정한 조성을 이룸을 확인하였다. 이 조 성을 스핀코팅에 의하여 백금박과 실리콘 웨이퍼상에 금속유기화학물 막을 형성하고 최고 온도와 유지시간에 따라 소성하여 형성된 유전체 박막들의 전기전 특성을 측정하고 고찰하 였다.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.