• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.105-106
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• 2007

자외선 차단용 $TiO_2$ 박막을 제조하기 위해 수열합성법 중 외부로부터 $N_2$ 가스를 인가하는 방법으로 200 bar의 압력을 유지하여 브룩카이트상의 $TiO_2$ 졸을 합성하였다. 제조된 $TiO_2$ 졸을 잉크젯 프린터로 FTO glass에 프린팅하여 $TiO_2$ 박막을 제조하였고, 합성된 졸과 박막의 특성 평가를 실시하였다. 합성된 졸의 크기는 30nm 이하로 비교적 균질하였으며 잉크젯 프린팅 후에도 입자 형상 및 크기의 변화는 나타나지 않았다. 또한, 코팅 횟수가 증가함에 따라 자외선 영역에서의 흡수도가 증가함을 알 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.328-334
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• 1992

TiO2 sols were prepared by hydrolysis and polymerization of titanium tetra-isopropoxide (TTIP) in the presence of diethanolamine (DEA). The optimal mole ratio of water to TTIP is 2 and the concentration of the TiO2 sol 0.7 M. Golden TiN films without cracks were obtained by dipping Si(110) wafers into the TiO2 sol and followed by nitridation in NH3 at 1100$^{\circ}C$ for 5 h. The TiN films were studied by an optical microscope, DTA, TGA and X-ray analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.13-13
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• 2001

현재 초고속 가공 공구의 국내 시장은 150억원이며 향후 3년 내에 1500억원으로 급성 장활 전망이다. 무윤활 초고속 가공을 실현하기 위해서는 윤활특성이 우수한 초고경도 코팅의 개발이 필요하며 이를 통해 기계설비의 수명향상과 폐유문제 해결을 기대할 수 있다. 기존의 고체윤활 코팅은 초고경도 코팅의 상부에 $MoS_2$, Graphite 등 윤활성 박막을 합성하였으나, 이들은 Hexagonal 구조의 연질 박막이며 수분이 존재하는 대기중에서는 윤활 및 내마모 특성이 급격히 저하된다. 환경친화 대체소재 개발의 일원으로 TiN, ZrN 박막 등이 이미 개발되었고 기계적 특성이 우수하여 널리 응용되고 있으나 아직 경도(약 20GPa 내외) 및 윤활성의 한계 (마찰계수 $\mu=O.6$)를 극복하지 못하고 있다. TiN박막 위의 Cu의 첨가는 TiN의 구조와 성질을 크게 변화시키는 것으로 알려져 있다. 따라서 본 연구에서는 TiN 기지 위에 Cu를 도핑함으로써 경도의 상승을 통환 내구력의 향상과 마찰계수의 감소를 통한 윤활성의 향상을 보고자하였다. TiN합성의 안정화를 위하여 magnetron sputtering과 arc ion pIatingd을 병용한 hybrid 공정을 이용하였다. Cu첨가에 따른 결정 성장 거동의 변화를 보기 위해 XRD 분석을 실행하였고, EDS 분석을 통해 Cu target 전류밀도에 의한 기지내의 Cu의 함량변화를 고찰하였으며, 경도 및 윤활특성을 고찰하기 위해서 경도 시험과 마모 시험(ball-on disc type test)를 하였다.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.314-320
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• 1997

A chemical reaction and electronic structure change at the interface between copper and titanium nitride were investigated by XPS. A thin Cu layer was deposited on a TiN substrate oxidized by exposure to air at room temperature. We observed the Ti(2p), O(1s), N(1s), Cu(2p) core-level, and Cu LMM Auger line spectra. With increasing of the thickness of Cu layer, these spectra do not show any changes in the line shape as well as in peak position. In addition, the valence band spectra in XPS do not show any changes, which indicates that Cu does not react with Ti, N, and O. This inreactivity of Cu might cause a poor adhesion between Cu and TiN.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.136-138
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• 2007

최근 기계가공기술의 발달에 따라 내마모용 TiN 박막의 수요가 증가하였고, TiN박막은 내마모용으로 높은 경도 및 밀착력을 필요로 한다. TiN박막을 증착시키는 방법은 PVD, CVD 등 여러 가지가 있으나 본 연구에서 공구강 SKD 61기판 표면과 Radical Nitriding(RN) 처리된 SKD 61 기판에 arc ion plating(AIP)를 이용하여 TiN 박막을 증착시켜 표면경도를 향상시키고, 이 코팅층의 미세구조가 기계적 특성에 미치는 영향을 연구하였다. 그 결과 RN처리된 SKD61에서 코팅 두께가 많이 나왔고, 스크래치테스트 결과 접착력이 향상되었음을 알 수 있었다.

• Journal of Environmental Science International
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• v.16 no.6
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• pp.683-688
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• 2007

In this study, N doped $TiO_2$ (TiO-N) thin film was prepared by DC magnetron sputtering method to show the photocatalytic activity in a visible range. Various gases (Ar, $O_2\;and\;N_2$) were used and Ti target was impressed by 1.2 kW -5.8 kW power range. The hysteresis of TiO-N thin film as a function of discharge voltage wasn't observed in 1.2 and 2.9kW of applied power. Cross sections and surfaces of thin films by FE-SEM were tiny and dense particle sizes of both films with normal cylindrical structures. XRD pattern of $TiO_2$ and TiO-N thin films was appeared by only anatase peak. Red shift in UV-Vis adsorption spectra was investigated TiO-N thin film. Photoactivity was evaluated by removal rate measurement of suncion yellow among reactive dyes. The photodegradation rate of $TiO_2$ thin film on visible radiation was shown little efficiency but TiO-N was about 18%.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.20-27
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• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.