• Korean Journal of Materials Research
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• v.7 no.2
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• pp.114-120
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• 1997

Perovskite $BaTiO_3$ thin films on stainless steel substrate were prepared by using electrochemical reduction method in solution of $TiCl_4\;and\;Ba(N0_3)_2$. According to current density and electrolysis time. the morphology and thickness of film were varied. Ra/'Ti atomic ratio in $BaTiO_3$ film was controlled by Ha/Ti atomic ratio in solution. Although the excess $TiO_2{\cdot}nH_2O$ film was coated in initial stage of electrolysis. UiilTi atomic ratio in film was nearly constant in later stage. $BaTiO_3$ film precursor was obtained under the condition of $1OmA/cm^2$ current density and Smin electrolysis time. $BaTiO_2$ thin films with perovskite phase were formed 11,. the heat treatment above $500^{\circ}$.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.234-240
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• 2001

The diffusion barrier properties of TiN by using Cu(Mg) alloy film have been investigated. Cu(Mg) alloy film was deposited on air-exposed TiN film. Upon annealing, interfacial MgO of 100 $\AA$ has been formed due to the reaction of Mg with oxygen existed on the surface of TiN. Combined MgO/TiN structure prevented the interdiffusion of Cu and Si up to $800^{\circ}C$. To improve the adhesion of Cu(Mg) alloy film to the TiN, TiN layer was treated by $O_2$ plasma, followed by vacuum annealing at $300^{\circ}C$. It was found that increased oxygen on the surface of TiN film by plasma treatment enhanced segregation of Mg toward the interface, resulting in the formation of dense MgO layer. Improved adhesion characteristics have been formed through this treatment. However, increased power of $O_2$ plasma led to the formation of TiO$_2$ and decreased the Mg content to be segregated to the interface, resulting in the decrease in adhesion property. In addition, the deposition of 50 ${\AA}$ Si on the TiN enhanced the adhesion of Cu(Mg) alloy to TiN without deteriorating the TiN diffusion barrier characteristics.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.676-680
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• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.35-50
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• 2012

$900^{\circ}C$이상 초고온 He-gas 분위기 또는 용융불화염 (molten salts, FLINAK) 환경에서 사용될 VHTR(Very High Temperature Reactor)의 IHX(Intermediate heat exchanger)용 열수송 구조재료로 가장 가능성이 높은 합금인 Inconel 617 및 Hastelloy X 상에 습식화학적, 물리적기상합성법(Vacuum arc-plasma과 RF magnetron sputtering) 및 pack cementation에 의한 표면개질 및 마이크로 초내열(refractory ceramics) 코팅층(TiN, TiCN, TiAlN, $Al_2O_3$, $TiO_2$)을 형성시켰다. 고온 장기사용 시 문제가 될 수 있는 고온에서의 조직변화, 미세구조와 상(phase)형성, 고온 부식 및 그에 따른 마모(wear resistance) 손상 등 이들 소재의 내열, 내식 및 내마모 물성을 개선하는 연구를 수행하였다. TiAlN 박막의 경우 공기분위기에서 N이 분해되나 치밀한 산화물($TiO_2/Al_2O_3$ layer)을 형성하여 내식성 있는 보호피막을 형성함으로 기판과의 열팽창 계수로 인한 박리가 발생하지 않아 보호피막으로 적합하였다. Pack cementation법에 의한 aluminiding(Al-Ni합금)도 He 및 공기분위기에서 고온물성의 저하를 가져오는 $Cr_2O_3$의 생성을 충분히 억제하고 있었으며 He 및 air 분위기에서 사용이 가능한 박막으로 여겨진다. 내열 및 내식성에 대한 실험을 종합한 결과, 공기분위기에서 사용할 수 없는 박막은 He-gas 및 FLINAK(LiF-NaF-KF) 용융염 분위기에서도 사용할 수 없었으며, He-gas, FLINAK 및 air 분위기에서 모두 사용이 가능한 박막으로는 Inconel 617에서는 $(TiO_2-)Al_2O_3$, TiAlN 및 Al-Ni이었고 Hastelloy에서는 Al-Ni 및 $Al_2O_3$가 가장 적당하였다.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.59-64
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• 1998

Pt/SiO2/Si 기판구조위에 스크린인쇄법과 졸-겔법에 의해 (Pb, La)TiO3(PLT) 후막 과 박막을 도포시켜 $650^{\circ}C$후속열처리 온도에서 결정화한후 결정특성과 전기적 특성을 조사 하였다. $650^{\circ}C$ 온도에서 후속열처리된 PLT 시료의 경우 전형적인 perovskite 결정구조를 보 여주었다. SEM 단면형상으로부터 Pt 전극과 PLT막 사이에는 비교적 평활한 계면형상을 보여주었다. PLT 후막과 박막시료의 잔류분극(2Pr) 값은 약 1$\mu$C/cm2 으로각각 나타났으며 이와같이 후막 PLT시료에 비해 박막시료의 잔류분극값이 큰이유는 박막시료가 보다 양호 한 결정성을 지니기 때문이었다. 상온부근에서 후막과 박막시료의 초전계수값은 약 1.5nC/cm2.$^{\circ}C$와 4.0nC/cm2.$^{\circ}C$의 값을 각각 나타내었으며 누설전류의 크기는 약 0.3~0.8$\mu$ A/cm2의 비교적 양호한 누설전류 특성을 얻었다.

• Analytical Science and Technology
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• v.6 no.2
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• pp.239-246
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• 1993

The structure of $(BaSr)TiO_3$ thin film deposited on ITO coated glass, bare glass and (100) Si substrates was not changed, but the crystallinity was improved by the polycrystalline ITO layer and (100) Si substrate. The composition of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was nearly stoichiometric ((Ba+Sr)/Ti=1.08~1.09) and very uniform through all deposition process. But as the deposition temperature increases, the interdiffusion between grown thin film and ITO layer and between ITO layer and base glass is severer. $(BaSr)TiO_3$ thin film deposited on ITO coated glass substrate was highly transparent. The refractive index($n_f$) of $(BaSr)TiO_3$ thin film deposited on ITO coated glass was 2.138~2.286 as a function of substrate temperature.

• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.591-596
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• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.2
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• pp.31-35
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• 2001

The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.