• Journal of Surface Science and Engineering
• /
• v.24 no.4
• /
• pp.196-205
• /
• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.247-248
• /
• 2008

The etching characteristics of Titanium Nitride (TiN) and etch selectivity of TiN to $SiO_2$ and $HfO_2$ in $CH_4$/Ar plasma were investigated. It was found that TiN etch rate shows a non-monotonic behavior with increasing both Ar fraction in $CH_4$ plasma, RF power, and gas pressure. The maximum TiN etch rate of nm/min was obtained for $CH_4$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. From these data, the suggestions on the TiN etch characteristics were made.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
• /
• 2002.11a
• /
• pp.329-334
• /
• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.6
• /
• pp.298-304
• /
• 2009

The effect of the surface treatments on the high temperature properties of the Inconel 617, one of the promising candidate alloys for high temperature heat-transport system, has been studied. Various surface modification methods including a rapid thermal process(RTP), a hydrothermal treatment, and a physical vapor deposition($2{\mu}m$ thick TiAlN film by an arc discharge) were applied to the Inconel 617. The morphological and the structural properties of the surface-modified Inconel 617 samples after heat treatment at $1000^{\circ}C$ in the air were compared to find out whether inhomogeneous formation of $Cr_2O_3$ crust at the surface region was suppressed or not. TiAlN-coated Inconel 617 showed homogeneous microstructure and the lowest wear loss compared to bare, RTP- and hydrothermally-treated Inconel 617 by suppressing the $Cr_2O_3$ crust formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.290-294
• /
• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.186-186
• /
• 1999

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.180-180
• /
• 2003

FRAM (Ferroelectric Random Access Memory)은 DRAM(Dynamic Random Access Memory)in 커패시터 재료을 상유전체 물질에서 강유전체 물질로 대체하여 전원 공급이 차단되어도 정보를 기억할 수 있고, 데이터의 고속처리가 가능하고 저소비전력과 집적화가 뛰어난 차세대 메모리 소자이다. 본 연구에서는 n-Well/P-Si(100) 기판위에 $Y_2$O$_3$ 박막을 중간층 (buffer layer)으로 사용하여 (Bi,La) Ti$_3$O$_{12}$ (BLT) 강유전체 박막을 졸-겔 방법으로 형성하여 MFM(I)S(Metal Ferroelectric Metal (Insulation) Silicon) 구조의 커패시터 및 전계효과형 트랜지스터(Field Effect Transistor) 소자를 제작하였다. 제작된 소자에 대해 형상학적, 전기적 특성을 조사, 분석하였다.

• Journal of the Korean Chemical Society
• /
• v.30 no.1
• /
• pp.19-26
• /
• 1986

A titanium oxide thin films were prepared by air oxidation and vapour oxidation and a $TiO_2$ single crystal was reduced by heating in an argon atmosphere. All the electrode characteristics of the Ti$O_{2-x}$, thin films are not different from those of slightly reduced single crystal rutile. In cyclic voltammogram of oxygen containing electrolyte solution at Ti$O_{2-x}$ electrodes, cathodic peaks were observed at between -0.8V and -1.0V vs. SCE. The cathodic current near 0V vs. SCE in saturated solution with nitrogen was observed to be greater than in saturated solution with air. The chronoamperogram was represented by the equation of i = $i_0e^{-kt}$, when the rate constant k was represented by the equation of k =$k_0{[H^+]}^nexp(A{\eta}+E_a/RT)$ The values of activation energy $E_a $were found to be 4.6~4.8kcal/mole in overpotential range of 0.035∼0.145 V and 1.6kcal/mole in overpotential range of 0.2∼0.5V. The values of n and A were found to be 0. 1 and 5.4~5.6/V in range of 0.035~0.145V, and in range of 0.2~0.5V, to be 0.04 and 1.3/V, respectively. This can be interpreted as an totally irreversible reduction of oxygen.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.70-70
• /
• 1999

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.02a
• /
• pp.43-43
• /
• 1999