• Title/Summary/Keyword: TiO2

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Effects of Deposition Pressure on the Phase Formation and Electrical Properties of BiFeO3 Films Deposited by Sputtering

  • Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.601-606
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    • 2009
  • $BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

ANALYSIS OF SrTiO$_3$STEP-FLOW GROWTH BY RHEED

  • Shin, Dong-Suk;Lee, Ho-Nyung;Kim,Yong-Tae;Chol, In-Hoon;Kim, Chang-Jung;Kim, T.Y.;Lee, J.K.;Chung, Il-Sub
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1998.08a
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    • pp.65.2-65
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    • 1998
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In2S3 Co-Sensitized PbS Quantum Dot Solar Cells

  • Basit, Muhammad Abdul;Park, Tae Joo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.273-273
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    • 2014
  • Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.

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Analysis of Attrition Rate of 50μm Size Y2O3 Stabilized Zirconia Beads with Different Microstructure and Test Conditions (50μm급 이트리아 안정화 지르코니아 비드의 미세구조 및 마모 조건에 따른 마모율 분석)

  • Kim, Jung-Hwan;Yoon, Sae-Jung;Hahn, Byung-Dong;Ahn, Cheol-Woo;Yoon, Woon-Ha;Choi, Jong-Jin
    • Korean Journal of Materials Research
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    • v.29 no.4
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    • pp.233-240
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    • 2019
  • This study analyzes the mechanical properties, including the attrition rate, of $50{\mu}m$ size yttria-stabilized zirconia (YSZ) beads with different microstructures and high-energy milling conditions. The yttria distribution in the grain and grain-boundary of the fully sintered beads relates closely to Vickers hardness and the attrition rate of the YSZ beads. Grain size, fractured surfaces, and yttrium distribution are analyzed by electronic microscopes. For standardization and a reliable comparison of the attrition rate of zirconia beads with different conditions, Zr content in milled ceramic powder is analyzed and calculated by X-ray Fluorescence Spectrometer(XRF) instead of directly measuring the weight change of milled YSZ beads. The beads with small grain sizes sintered at lower temperature exhibit a higher Vickers hardness and lower attrition rate. The attrition rate of $50{\mu}m$ YSZ beads is measured and compared with the various materials properties of ceramic powders used for high-energy milling. The attrition rate of beads appears to be closely related to the Vickers hardness of ceramic materials used for milling, and demonstrates more than a 10 times higher attrition rate with Alumina(Hv ~1650) powder than $BaTiO_3$ powder (Hv ~315).

A study on crystalline control of zinc crystal glaze for ceramics (도자기용 아연결정 유약의 결정 제어를 위한 연구)

  • Hyun-Soo Lee;Chi Youn Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.234-243
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    • 2023
  • Zinc crystals of ZnO and SiO2 in glaze raw materials, developed according to composition and firing requirements, are preferred because of their high decorative properties. However, most zinc crystal glazes have a high firing temperature and a narrow firing temperature range, making it difficult to use them as commercial glazes in ceramics. Therefore, in this study, it was expected that the firing temperature of a typical zinc crystal glaze could be lowered to below 1270℃ by using the eutectic effect through mixing frit, the main raw material used in manufacturing zinc crystal glaze. As a result, not only was the formation temperature of zinc crystals lower in the mixed frit glaze, but also the firing temperature range was widened to 1230~1270℃, making it possible to develop a glaze that produces crystals stably. The firing temperature was lowered to 1230~1250℃ and the holding temperature during cooling was lowered to about 950℃, resulting in the development of an economically effective glaze. When using a combination of frit, it has been shown that the holding temperature during cooling affects the recrystallization of zinc crystals depending on the composition of the glaze, and the crystal structure can be adjusted at this time. Additionally, the amount and shape of crystals can be controlled by using a nucleating agent.

Fabrication and characteristics of TiO2 coating solution with silica-based inorganic binder (실리카 베이스 무기 바인더 기반의 TiO2 코팅액의 제조 및 특성 평가)

  • Kang, Woo-kyu;Kim, Hye-Jin;Kim, Jin-Ho;Hwang, Kwang-Taek;Jang, Gun-Eik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.2
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    • pp.71-76
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    • 2019
  • Recently, the demand of labels for product management is increasing, as the automation system becomes more common. the development of functional labels which can be used in various environments has been rapidly proceeded. In the case of a printed circuit board, barcode labels with thermal and chemical stability are generally used due to a high temperature process around $300^{\circ}C$ and chemical cleaning in the manufacturing process. However, the yellowing phenomenon of labels that can lower the resolution of printed barcode image still needs to be prevented. In this study, we prepared a composite coating layer using a silica inorganic binder and a titanium dioxide white pigment, and developed a functional labels with thermal and chemical stability. The silica inorganic binder prepared by sol-gel process was confirmed to show excellent adhesion and abrasion resistance with the polyimide film. The white coating layer could be formed on the polyimide film with mixing the silica inorganic binder and titanium dioxide white pigment. The prepared coating layer showed excellent whiteness and glossiness above $400^{\circ}C$. The excellent chemical stability of the coating layer was also confirmed by the chemical treatment with acidic (pH 1.6) and basic (pH 13.6) cleaners.

Characteristics of Ta-Ti alloy Metal for NMOS Gate Electrodes (NMOS 게이트 전극에 사용될 Ta-Ti 합금의 특성)

  • Kang, Young-Sub;Lee, Chung-Keun;Kim, Jae-Young;Hong, Shin-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.15-18
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    • 2003
  • Ta-Ti metal alloy is proposed for alternate gate electrode of ULSI MOS device. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method and good interface property was obtained. The sputtering power of each metal target was 100W. Thermal and chemical stability of the electrode was studied by annealing at $500^{\circ}C$ and $600^{\circ}C$ in Ar ambient. X-ray diffraction was measured to study interface reaction and EDX(energy dispersive X-ray) measurement was performed to investigate composition of Ta and Ti element. Electrical properties were evaluated on MOS capacitor, which indicated that the work function of Ta-Ti metal alloy was ${\sim}4.1eV$ compatible with NMOS devices. The measured sheet resistance of alloy was lower than that of poly silicon.

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Assessment of Volatile Organic Compound Reduction Using an Air Purification Facility in an Adhesive Handling Process (접착제 취급 작업장 내 공기정화 설비를 이용한 휘발성 유기화합물 저감 평가)

  • Jaemin Woo;Dongjun Kim;Jihun Shin;Gihong Min;Chaekwan Lee;Wonho Yang
    • Journal of Environmental Health Sciences
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    • v.49 no.2
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    • pp.78-88
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    • 2023
  • Background: Exposure to volatile organic compounds (VOCs) can have acute and chronic health effects on human beings in general and in working environments. In particular, VOCs are often emitted in large quantities in industrial settings. In such circumstances, there is a need to improve the indoor air quality at workplaces. Objectives: The purposes of this study were to verify the effectiveness of air cleaning devices in workplaces and provide alternative solutions for improving working environments. Methods: Personal exposure and area level of VOCs for workers were evaluated in a car-part adhesive process before and after installing an air cleaning device with a TiO2-coated filter. Passive samplers and direct reading instruments were used to collect and analyze the VOCs, and the removal efficiency and improvement of air quality were evaluated. We also calculated the exposure index (EI) to assess the risk level in the workplace. Results: The removal efficiency for VOCs through the installation of the air cleaning device was approximately 26.9~69.0% as determined by the concentration levels before and after installation. The measured substances did not exceed the exposure limits for the work environment and the EI was less than 1. However, carcinogenic substances such as benzene, formaldehyde, carbon tetrachloride, and trichloroethylene were detected. Conclusions: The application of an air cleaning device can be a solution for controlling the indoor air quality in a workplace, particularly in cases where ventilation systems cannot be installed due to process limitations.

The Structural and Electrical Properties of NiCr Alloy for the Bottom Electrode of High Dielectric(Ba,Sr)Ti O3(BST) Thin Films

  • Lee, Eung-Min;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.1
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    • pp.15-20
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    • 2003
  • NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.