• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.599-603
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• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.244-247
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• 1999

The(Sr$\sub$0.85/Ca$\sub$0.15/) TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at room temperature is close to stoichiometry(1.102 in A/B ratio). Also, SCT thin films deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$].The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$].

• 멤브레인
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• 제34권2호
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• pp.146-153
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• 2024

본 실험에서는 Ti를 기반으로 한 평판 수소 분리막을 설계하여 제조하였다. 새로운 조성의 Ti를 베이스로 한 수소 분리막을 찾기 위하여 여러 합금들의 물리화학적 특성과 수소투과도 사이의 상관관계에 대해 조사하였다. 이를 바탕으로 신조성의 합금막 2종(Ti_14.2Zr_66.4Ni_12.6Cu_6.8 (70 ㎛), Ti_17.3Zr_62.7Ni₂₀ (80 ㎛))을 설계 및 제조하였다. 제조된 평판 수소 분리막은 300~500℃, 1~4 bar의 조건에서 혼합 가스(H₂, N₂), sweep 가스(Ar)를 이용하여 수소 투과 실험을 진행하였다. Ti_14.2Zr_66.4Ni_12.6Cu_6.8 합금막은 500℃, 4bar에서 최대 16.35 mL/cm² min의 flux를 가지며, Ti_17.3Zr_62.7Ni₂₀ 합금막은 450℃, 4 bar에서 최대 10.28 mL/cm² min의 flux를 가진다.

• 한국전기전자재료학회논문지
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• 제15권9호
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• pp.788-793
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• 2002

The glass-electroceramics were composed of glass composition(CaO, $SiO_2$, $B_2$ $O_3$) and electroceramic composition(BaO, N $d_2$ $O_3$, B $i_2$ $O_3$ and Ti $O_2$) Their dielectric properties have been investigated as a function of sintering temperature and glass contents. In the ceramics composed of 0.16BaO-0.15(N $d_{0.87}$,B $i_{0.13}$)$_2$ $O_3$-0.69Ti $O_2$with glass ［EG-2782］ 3wt% addition and sintered at 108$0^{\circ}C$ for 2h, we could obtain microwave properties of dielectric constant $\varepsilon$$_{r}$ = 80.1, quality factor Q $\times$f = 810(at 3.5 GHz) and temperature coefficient of resonant frequency $\tau$$_{f}$ = -1.3 ［ppm/$^{\circ}C$］. These experimental results show that dielectric constant and temperature coefficient of resonant frequency could be estimated by empirical equations involving the rule of mixture.e.

• Journal of Advanced Marine Engineering and Technology
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• 제27권3호
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• pp.453-459
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• 2003

In this study, the effect of heat treatment to the electrochemical polarization resistance for the Ti-6Al-4V alloy was measured. The solution heat treatments were carried out at $1066^{circ}E, 966^{\circ}$E$, followed by aging heat treated $550^{circ}E, 600^{circ}E, and 650^{circ}E$. The electrochemical polarization resistance behavior was measured by potentio-dynamic polarization in the 1N $HNO_3$ + 15ppm HF solution. The obtained results were as follows. 1. As solution heat temperature increased. the corrosion potential was increased, whereas passive current density and critical current density were decreased. 2. As aging heat temperature increased, the corrosion potential was almost constant, but passive current density was decreased 3. The results of composition test measured by EDS at grain boundary and near $\gamma'$ precipitates indicated that S, Cl. and Si which originated from base metal were segregated at the grain boundaries Al and Ti which were the main alloying element in $\gamma'$ were depleted at the $\gamma'$ precipitated. The depletion of Al and Ti in $\gamma'$ was caused to early breakdown of passive film.

• 한국재료학회지
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• 제23권1호
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• pp.59-66
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• 2013

Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

• 한국세라믹학회지
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• 제24권6호
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• pp.553-560
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• 1987

Amorphous ferrites with composition B2O3-mBaO-nFe2O3 were prepared by an ultra rapidquenching technique. X-ray patterns and SEM reveal the products to be amrophous at room temperature. BaFe12O19 fine particles extracted from amorphous Ba-ferrites which additived Al2O3, SiO2, TiO2 and CoO have narrow size distribution, average 0.2$\mu\textrm{m}$, and coercive force, average 1400 Oe, increased with increasing TiO2 amounts. The obtained BeFe12O19 fine particles would be appreciated as perpendicular magnetic recording media.

• 전자공학회논문지D
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• 제36D권7호
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• pp.17-25
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• 1999

PECVD 법을 이용하여 Tungsten Nitride($WN_x$) 박막을 $WSi_3N_4$ 기판위에 형성하였다. $WN_x$ 박막은 기관온도, 가스의 유량, rf power 등의 공정변수를 변화시키면서 형성되었고, 서로 다른 질소원으로 $NH_3$와 $N_2$를 각각 사용하여 박막의 특성을 조사하였다. $WN_x$ 막 내의 질소함량은 $NH_3$와 $N_2$의 유량에 따라 0~45% 정도로 변화하였으며, $NH_3$를 사용하였을 때, 최고 160nm/min의 높은 성장률을 나타내었다. $WSi_3N_4$ 기판 위에서는 TiN이나 Si 위에서보다 높은 성장률을 나타내었다. $WN_x$ 박막의 순도를 AES로 측정해 본 결과 $NH_3$를 사용했을 때 고순도의 박막을 얻을 수 있었다. XRD 분석으로 순수한 다결정의 W가 비정질의 $WN_x$로 변화되는 것을 알 수 있었으며, 이것은 $WN_x$가 식각 공정시 미세 패턴 형성이 W보다 유리할 것이라는 것을 보여준다. TiN, NiCr, Al 등의 다양한 기판 위에 형성해 본 결과 Al 위에서 최대 $1.6 {\mu}m$의 두꺼운 막이 형성되었다.