• Title/Summary/Keyword: TiMoN

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Effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ films deposited on 4H-SiC (4H-SiC에 증착된 BST 박막의 열처리 효과에 따른 구조적, 전기적 특성)

  • Lee, Jae-Sang;Jo, Yeong-Deuk;Bahng, Wook;Kim, Sang-Cheol;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.196-196
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    • 2008
  • We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

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Effect of internal stress on cyclic fatigue failure in .06 taper ProFile (내부 응력이 .06 taper ProFile의 피로 파절에 미치는 영향)

  • Jung, Hye-Rim;Kim, Jin-Woo;Cho, Kyung-Mo;Park, Se-Hee
    • Restorative Dentistry and Endodontics
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    • v.37 no.2
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    • pp.79-83
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    • 2012
  • Objectives: The purpose of this study was to evaluate the relation between intentionally induced internal stress and cyclic fatigue failure of .06 taper ProFile. Materials and Methods: Length 25 mm, .06 taper ProFile (Dentsply Maillefer), and size 20, 25, 30, 35 and 40 were used in this study. To give the internal stress, the rotary NiTi files were put into the .02 taper, Endo-Training-Bloc (Dentsply Maillefer) until auto-stop by torque controlled motor. Rotary NiTi files were grouped by the number of induced internal stress and randomly distributed among one control group and three experimental groups (n = 10, Stress 0 [control], Stress 1, Stress 2 and Stress 3). For cyclic fatigue measurement, time for separation of the rotary NiTi files was recorded. The fractured surfaces were observed by field emission scanning electron microscope (FE-SEM, SU-70, Hitachi). The time for separation was statistically analyzed using two-way ANOVA and post-hoc Scheffe test at 95% level. Results: In .06 taper ProFile size 20, 25, 30, 35 and 40, there were statistically significant difference on time for separation between control group and the other groups (p < 0.05). Conclusion: In the limitation of this study, cyclic fatigue failure of .06 taper ProFile is influenced by internal stress accumulated in the files.

Effect of Welding Condition on Microstructure of Transient Zone in Overlay Weld of 3Cr-1Mo Steel/STS-309L (3Cr-1Mo강/STS-309L 오버레이 용접부의 천이영역 조직에 미치는 용접조건의 영향)

  • 김동진;김병훈;지병하;김정태;김성곤;강정윤;박화순
    • Journal of Welding and Joining
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    • v.18 no.2
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    • pp.176-176
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    • 2000
  • Recently developed Austenite stainless steel,309L was to overlay on 3Cr-1Mo-V-Ti-B steels, using Electroslag welding process, which wide electrodes were adopted. Transition region in welding interlayer relating to disbonding crack was investigated. Also. the effect of welding condition on the width of transition region and coarsening grains of the austenite were studied.1) With increasing welding speed the width of martensite at transient region was increased, but the amount of delta ferrite in weld metal was reduced, being fine grained.2) The form of martensite at the transition region was occured by reversible transition region, leading to increasing Ms point.3) With increasing welding speed, the grain of austenite formed at the welding interface was finer. With increasing welding current under the same welding speed, the grain size of the austenite was finer. At high current, original grain size of the austenite is coarse, but the austenite has fine grains because the austenite was transformed to martensite during cooling.4) In the case of high welding speed, the width of martensite at the welding interface was increased, but the grain size of austenite at the welding interface was finer. This indicates that the inhibition of disbonding crack may be achieved through dispersening fine carbides in the grain boudary.(Received August 3, 1999)

Correlation Analysis between Plantar Pressure and Body Alignment According to the Dominant Hand of Elementary School Baseball Players (초등학교 야구선수들의 우세손에 따른 족저압과 신체 정렬간의 상관관계 분석)

  • Jeong, Mo-Beom
    • Journal of the Korean Society of Physical Medicine
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    • v.16 no.3
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    • pp.115-121
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    • 2021
  • PURPOSE: This study analyzed the correlation between the plantar pressure and body alignment according to the dominant hand of elementary school baseball players. METHODS: The subjects consisted of 32 elementary school baseball players. The 32 players were classified in the right-hand dominant group (Rt. Group, n = 22) and left-hand dominant group (Lt. group, n = 10). The plantar pressure was measured using a pedoscan to determine the maximum pressure and pressure distribution. The body alignment was measured using a fometric 4D to measure the trunk imbalance angle (TI), pelvic tilt angle (PTi), pelvic torsion angle (PTo), pelvis rotation angle (PR), kyphotic angle (Ky), lordotic angle (Lo), and trunk torsion angle (TT). RESULTS: Participants showed correlations in the Rt. group, according to the left maximum pressure, Lo (r = .592, p < .05), and TT (r = .514, p < .05); according to the right maximum pressure, PR (r = .539, p < .05), and Lo (r = .503, p < .05). In the left pressure distribution, the PR (r = -.521, p < .05) showed a negative correlation. In the Lt. group, the PT (r = -.591, p < .05) showed a negative correlation in the left pressure distribution. CONCLUSION: These results can be used as basic data for a body analysis study of elementary school baseball players in the future.

Development Pattern and Ductile Deformation of the Sancheong Fe-Ti Mineralized Zone, Korea (산청 철-티탄 광화대의 발달양상과 연성변형)

  • Ryoo, Chung-Ryul;Kim, Jong-Sun;Son, Moon;Koh, Sang-Mo;Lee, Han Yeang;Kang, Ji-Hoon
    • The Journal of the Petrological Society of Korea
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    • v.22 no.2
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    • pp.209-217
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    • 2013
  • Fe-Ti ore bodies occur in the western part of the Sancheong anorthosites around Banggok-ri, Sancheong, Korea. Within ore bodies, a several centimetric size of anorthositic breccia are enclaved by ore-bearing mafic part and deformed strongly as a sigmoidal form by ductile shearing. The ore bodies have a general N-S trending foliations with westward dipping directions. The foliation developed in the ore bodies cut the foliation in anorthosites. The stretching lineations are well developed in the foliated plane of the ore bodies, showing ENE-trending with gentle plunging angle to the ESE direction. The sigmoidal patterns of anorthositic breccia in the ore bodies indicates the top-to-the-eastnortheastward shearing. Thus, in this study area the relationship between the geometric pattern and the ductile deformation is an important fact to understand the Sancheong Fe-Ti mineralized zone, Korea.

인공관절의 수명 향상을 위해 PIII&D (Plasma Immersion Ion Implantation & Deposition) 기술로 제조된 인공관절용 NbN 박막의 마모 특성 평가

  • Park, Won-Ung;Jeon, Jun-Hong;Mun, Seon-U;Choe, Jin-Yeong;Im, Sang-Ho;Han, Seung-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.189-189
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    • 2011
  • 인공관절은 노인성 질환이나 자가 면역질환, 신체적인 외상 등으로 인하여 발생하는 관절의 손상 부위를 대체하기 위해 고안된 관절의 인공 대용물이다. 인공 관절 중 인공 고관절의 경우 관절 운동을 하는 라이너(Liner)와 헤드(Head) 부분이 인공관절의 수명을 결정하게 되는데, 헤드 부분에 메탈소재와 라이너 부분에 고분자 소재를 사용하는 MOP (metal on polymer) 구조의 인공관절은 충격흡수의 장점이 있는 반면 wear debris에 의한 골용해로 인하여 관절이 느슨해지는 문제점이 발생하여 재 시술의 주요 원인이 되고 있다. 또한 메탈 헤드의 마모로 인한 금속이온의 용출은 세포 독성의 문제를 야기하여 인공관절의 수명을 낮추는 또 하나의 요인이 되고 있다. 따라서 인공관절의 수명을 늘리기 위해 DLC, ZrO, TiN 등의 높은 경도 값을 갖는 박막을 금속 헤드 위에 증착하여 상대재인 인공관절용 고분자 소재의 마모량을 줄이고자 하는 연구가 활발하게 진행 되고 있다. 본 연구에서는 PIII&D (Plasma Immersion Ion Implantation & Deposition)공정을 이용하여 Co-Cr-Mo 합금 소재 niobium nitride (NbN) 박막을 증착하여 상대제인 UHMWPE (ultra high molecular polyethylene)의 마모를 줄이고자 하는 연구를 진행하였다. 마모량을 감소시키기 위하여, 박막 증착전에 질소를 이온주입하는 pre-ion implantation 공정을 도입하였으며, 또한 Co-Cr 합금과 NbN박막 사이의 접착력을 증가시키기 위하여 박막의 증착 초기에 이온주입과 증착을 동시에 수행하는 dynamic ion mixing공정을 수행하였다. NbN 박막의 특성을 평가하기 위해 XRD, XPS, AFM 등의 분석을 수행하였으며, 상대재인 초고분자량 폴리에틸렌의 마모량을 측정하기 위해 Pin-on-disk tester를 이용하여 마모 실험을 진행하였다. 마모 실험 결과, pre-ion implantation 공정을 도입한 경우 현재 상용화 되어있는 Co-Cr 합금에 비하여 마모량을 2배 이상 감소시키는 것을 확인 할 수 있었으며, dynamic ion mixing 공정을 도입한 경우 장시간의 마모 시험에 대한 마모 특성이 향상 되는 것을 확인 할 수 있었다.

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Fabrication and characteristics of alcohol sensor using Fe2O3 (Fe2O3후막을 이용한 alcohol sensor 제작 및 감응특성)

  • Lee, Y.S.;Song, K.D.;Lee, S.M.;Shim, C.H.;Choi, N.J.;Joo, B.S.;Lee, D.D.;Huh, J.S.
    • Journal of Sensor Science and Technology
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    • v.11 no.2
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    • pp.77-83
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    • 2002
  • In order to get low cost and portability, semiconductor gas sensor need to have low operating temperature and high sensitivity. $Fe_2O_3$ based sensors which were doped with metal oxide catalysts($MoO_3$, $V_2O_5$, $TiO_2$, and CdO) were fabricated by screen printing method. To improve electrical stability of sensors, the $Fe_2O_3$ sensors were annealed in $N_2$ at $700^{\circ}C$ for 2 hours. The $V_2O_5$ doped $Fe_2O_3$ sensor showed about $80{\sim}90%$ sensitivity at alcohol 1,000 ppm and have good selectivity to hydrocarbon gas and tobacco odors. The fabricated sensor and PIC-chip were employed for portable alarm system.

Nickel Film Deposition Using Plasma Assisted ALD Equipment and Effect of Nickel Silicide Formation with Ti Capping Layer (Plasma Assisted ALD 장비를 이용한 니켈 박막 증착과 Ti 캡핑 레이어에 의한 니켈 실리사이드 형성 효과)

  • Yun, Sang-Won;Lee, Woo-Young;Yang, Chung-Mo;Ha, Jong-Bong;Na, Kyoung-Il;Cho, Hyun-Ick;Nam, Ki-Hong;Seo, Hwa-Il;Lee, Jung-Hee
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.19-23
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    • 2007
  • The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

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Separation and Recovery of Ce, Nd and V from Spent FCC Catalyst (FCC 폐촉매로부터 Ce, Nd 및 V의 분리 회수 프로세스)

  • Jeon, Sung Kyun;Yang, Jong Gyu;Kim, Jong Hwa;Lee, Sung Sik
    • Applied Chemistry for Engineering
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    • v.8 no.4
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    • pp.679-684
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    • 1997
  • The major constituents in spent FCC catalysts are Si, Al, Fe, Ti, alkali metals and some others. The spent catalyst is also composed small amounts of rare metals such as Ce, Nd, Ni and V. The selective adsorption and concentration of Ce and Nd from the leaching solution of spent FCC catalysts with sulfuric acid($0.25mol/dm^3$) were carried out by the column method with a chelate resin having a functional group of aminophosphoric acid type. Ce and Nd were separated from eluate liquor containing Al, Nd and V by the precipitation process with oxalic acid. Vanadium is purified from chloride ion coexistance by solvent extraction, employing tri-n-octyl phosphine oxide as extractant with Al in the raffinate solution. Rare metals with the purity of 99 percent were obtained from the spent FCC catalyst.

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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.