• 제목/요약/키워드: TiC-Mo

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Prospects and Status of Intermetallic Compounds for High Temperature Applications (고온용 신소재 금속간화합물의 현황과 전망)

  • 정석주
    • Journal of the KSME
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    • v.34 no.5
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    • pp.392-398
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    • 1994
  • 구조용 고온재료로서 표 2에 나타내듯이 지금까지 니켈과 티타늄 알루미나이드($Ni_3Al$, NiAl, $Ti_3Al$, TiAl에 관하여 집중적인 연구가 진행되어 왔으며 다른 금속간 화합물에 대해서도 광범위한 연구가 진행중이다. 그 예로서 $Co_3Ti$는 800.deg. C에서 최대강도를 보이며 저온에서는 온도가 감소하면서 강도가 다시 증가하면 연성이라는 장점을 지닌 관계로 $MoSi_2$는 높은 융점과 우수한 산화저항력 때문에 $Nb_2Al$은 높은 융점과 경량성 때 문에 복합재료의 matrix로서 최근 주목을 받고 있다. 끝으로 비록 금속간화합물이 취성이라는 단점 때문에 실용화에 많은 문제점이 있으며 본 재료에 관한 연구가 준비 제조공정과정에서 수 소취성화, 고용점온도 취성 등으로 인하여 사용해온 기존의 재료를 보다 좀더 극한 상황에서 가볍고 저렴하게 사용할 수 있는 우주항공 및 지상대체재료로서 개발할 수 있음을 고려할 때 본 재료에 대한 본격적인 연구가 국재 경쟁력강화를 위해 신소재 개발에 부심하는 우리나라에서도 이루어질 필요가 있다.

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Oxidation Behavior of Oxide Particle Spray-deposited Mo-Si-B Alloys

  • Park, J.S.;Kim, J.M.;Kim, H.Y.;Perepezko, J.H.
    • Journal of the Korean Society for Heat Treatment
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    • v.20 no.6
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    • pp.299-305
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    • 2007
  • The effect of spray deposition of oxide particles on oxidation behaviors of as-cast Mo-14.2Si-9.6B (at%) alloys at $1200^{\circ}C$ up to for 100 hrs has been investigated. Various oxide powders are utilized to make coatings by spray deposition, including $SiO_2,\;TiO_2,\;ZrO_2,\;HfO_2$ and $La_2O_3$. It is demonstrated that the oxidation resistance of the cast Mo-Si-B alloy can be significantly improved by coating with those oxide particles. The growth of the oxide layer is reduced for the oxide particle coated Mo-Si-B alloy. Especially, for the alloy with $ZrO_2$ coating, the thickness of oxide layer becomes only one fifth of that of uncoated alloys when exposed to in air for 100 hrs. The reduction of oxide scale growth of the cast Mo-Si-B alloy due to oxide particle coatings are discussed in terms of the change of viscosity of glassy oxide phases that form during oxidation at high temperature.

ECR-PECVD PZT Thin Films for the Charge Storage Cpacitor of ULSI DRAMs (ECR-PECVD법을 사용한 ULSI DRAM 용 PZT 박막 제조)

  • 김재환;신중식;김성태;노광수;위당문;이원종
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.145-150
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    • 1995
  • PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.

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COLD NEUTRON SCATTERING STUDIES OF FRUSTRATED PYROCHLORE ANTIFERROMAGNETS

  • GARDNER, J.S.;RULE, K.C.;RUFF, J.P.C.;CLANCY, J.P.;GAULIN, B.D.
    • Nuclear Engineering and Technology
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    • v.43 no.1
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    • pp.7-12
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    • 2011
  • In this paper we review the neutron scattering work performed on 3 different antiferromagnetic pyrochlores which reveal how the character of the magnetic interactions plays a major role on the eventual outcome of the magnetic ground state. $Tb_2Ti_2O_7$, $Er_2Ti_2O_7$ and $Y_2Mo_2O_7$ have all been extensively studied over the past 15 years and are known to display, respectively, spin liquid, long range ordered and glassy ground states. Although detailed experiments have been performed on these compounds, and much is known about their low temperature properties, a detailed theoretical understanding of their ground states remains elusive.

Microstructure and Electrical Properties of SCT Ceramic Thin Film (SCT 세라믹 박막의 미세구조 및 전기적 특성)

  • 조춘남;신철기;최운식;김충혁;박용필;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.295-299
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    • 1999
  • The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

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Germplasm Detection for titi Genotype Using SSR Marker in Soybean

  • Kim, Myung-Sik;Jeong, Woo-Hyeun;Nam, Ki-Chul;Park, Mo-Se;Lee, Kyoung-Ja;Chung, Jong-Il
    • Journal of Crop Science and Biotechnology
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    • v.10 no.3
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    • pp.159-162
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    • 2007
  • Soybean Kunitz trypsin inhibitor(SKTI) protein is a small, monomeric and non-glycosylated protein containing 181 amino acid residues and is responsible for the inferior nutritional quality of unheated or incompletely heated soybean meal. The objective of this research is to confirm SSR marker(Satt228) tightly linked to the Ti locus using several germplasm accessions with TiTi or titi genotypes for MAS in soybean breeding programs. TiTi genotypes('Jinpumkong2', 'Clark', and 'William') had allele1 and titi genotypes(PI196168, C242, W60, and PI157440) had allele2 in Satt228 marker analysis. 'Jinpumkong2', 'Clark', and 'William'(TiTi genotype) had a Kunitz trypsin inhibitor protein of 21.5 kDa size, and PI196168, C242, W60, and PI157440(titi genotype) did not have the band in protein gel electrophoresis from the mature seed. Cosegregation between the SKTI protein(21.5 kDa size) and allele of Satt228 marker was observed in seven germplasm accessions with different genetic backgrounds. Any recombination between the SKTI protein and allele of the Satt228 marker was not observed. This result indicates that Satt228 marker may effectively utilized to select the plants with the titi genotype.

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$TiO_2$ 채널 기반 산화물 트랜지스터

  • Choe, Gwang-Hyeok;Kim, Han-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.60.2-60.2
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    • 2011
  • 본 연구에서는 Indium-free 및 gallium-free 기반의 산화물 TFT를 제작하기 위해 n-type $TiO_2$ 반도체 기반의 thin film transistor ($Mo/TiO_{2-x}/SiO_2/p+\;+Si$)를 oxygen deficient black $TiO_{2-x}$ 타겟을 이용하여 DC magnetron sputtering 공법으로 제작하고 그 특성을 분석하였다. DC magnetron sputtering 공법으로 성막된 $TiO_{2-x}$ semiconductor의 전기적, 광학적, 화학적 결합 에너지 및 구조적 특성 분석을 위해 semiconductor parameter analyzer (Aglient 4156-C), UV/Vis spectrometer, X-ray Photoelectron Spectroscopy, Transmission Electron Microscopy를 각각 이용하여 분석하였으며 이를 RTA 전/후 특성 비교를 통하여 관찰하였다. $TiO_{2-x}$ TFT의 소자 특성은 RTA 열처리 전/후 전형적인 insulator 특성에서 semiconductor 특성으로 변화되는 것을 관찰할 수 있었으며, 최적화된 열처리 공정에서 filed effect mobility 0.69 $cm^2$/Vs, on to off current ratio $2.04{\times}10^7$, sub-threshold swing 2.45 V/decade와 Vth 10.45 V를 확보할 수 있었다. 또한 RTA 열처리 후 밴드갭이 3.25에서 3.41로 확장되는 특성을 나타내었다. 특히 RTA 열처리 후 stoichiometric $TiO_2$ 상태와는 다른 $Ti^{2+}$, $Ti^{3+}$, $Ti^{4+}$ 등의 다양한 oxidation states가 관찰되었으며 이러한 oxidation states를 $TiO_{2-x}$ 박막에서의 oxygen deficient 상태와 연관시킴으로써 oxygen vacancy의 n-type dopant로의 거동을 확인하였다. $TiO_2$ 채널 기반의 TFT 특성을 통하여서 indium free 또는 gallium free 산화물 채널로써의 가능성을 확인하였다.

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Antibacterial Properties of TiAgN and ZrAgN Thin Film Coated by Physical Vapor Deposition for Medical Applications

  • Kang, Byeong-Mo;Lim, Yeong-Seog;Jeong, Woon-Jo;Kang, Byung-Woo;Ahn, Ho-Geun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.275-278
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    • 2014
  • We deposited TiAgN and ZrAgN nanocomposite coatings on pure Titanium specimens, by using arc ion plating (AIP) with single alloy targets. TiAg ZrAg alloy targets of 5 wt.%, 10 wt.% silver content by vacuum arc remelting (VAR), followed by homogenization for 2 hours at $1,100^{\circ}C$ in non-active Ar gas atmosphere and characterized these samples for morphology and chemical composition. We investigated the biocompatibility of TiAg and ZrAg alloys by examining the proliferation of L929 fibroblast cells by MTT test assay, after culturing the cells ($4{\times}10^4cells/cm^2$) for 24 hours; and exploring the antibacterial properties of thin films by culturing Streptococus Mutans (KCTC3065), using paper disk techniques. Our results showed no cytotoxic effects in any of the specimens, but the antibacterial effects against Streptococus Mutans appeared only in the 10 wt.% silver content specimens.

Fabrication of YBCO superconducting film with $CeO_{2}/BaTiO_{3}$double buffer layer ($CeO_{2}/BaTiO_{3}$ 이중완충막을 이용한 YBCO 박막 제작)

  • 김성민;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.790-793
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    • 2000
  • We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

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Analysis of Microstructure Evolution using Different Powder Metallurgy Process in Ti-X Alloy System (Ti-X계 합금의 분말야금 공정 차이에 따른 미세조직변화 분석)

  • Kwon, Hyeok-Gon;Kim, Doo-Hyeon;Gang, Min;Park, Ji-Hwan;Oh, Myung-Hoon
    • Journal of the Korean Society for Heat Treatment
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    • v.34 no.1
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    • pp.17-24
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    • 2021
  • In this study, Ti-X (X=Mn, Fe, Mo) powder alloys were designed and manufactured by both powder metallurgy (PM) and metal powder injection molding (MIM) process to improve strength and formability compared to CP-Ti powder materials. It was found that the lamellar microstructure consisted of α and β phases was formed in PM-processed alloys. However, MIM-processed alloys showed not the lamellar microstucture but the equiaxed α + β microstructure. It was also revealed that the contents of X component and feedstock were not affected to microstructure evolution. The reason why different microstructure was appeared between PM-processed and MIM-processed alloys is not clear yet, but supposed to be the effect of intersticial elements such as C, H and N derived from feedstock during debinding process of MIM.