• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• Membrane Journal
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• v.22 no.1
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• pp.8-15
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• 2012

Tubular $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membranes with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer were prepared by extrusion and dip coating technique. XRD and SEM result showed the tubular membrane possessed the perovskite structure and porouscoating layer (thickness= about $2{\mu}m$) in surface. The oxygen permeation test was measured at condition of ambient air (feed side) and vacuum (permeate side) in the temperature range from 750 to $950^{\circ}C$. The oxygen permeation flux of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer reached maximum $3.2mL/min{\cdot}cm^2$ at $950^{\circ}C$ and was higher than non-coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane. Long-term stability test result indicated that the oxygen permeation flux was quite stable during the 11 day.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.137-140
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• 2017

A $TiO_2$ nanofilm was deposited on ${\alpha}-Fe_2O_3$ nanopowders using the atomic layer deposition method. The $TiO_2$ film was prepared at $300^{\circ}C$ using $Ti(N(CH_3)_2)_4$ and $H_2O$ as the precursor and reactant gas, respectively. The thickness and composition of the $TiO_2$ surface were characterized by TEM and EDS measurements. The TEM results showed that the growth rate of the film was about $0.12{\AA}/cycle$. The EDS and SAED analyses showed the presence of titanium oxide on the surface of the ${\alpha}-Fe_2O_3$ nanopowders, confirming the deposition of the $TiO_2$ nanofilm. The Zeta potential and sedimentation test results showed that the dispersibility of the coated nanopowders was higher than that of the uncoated nanopowders. This is attributed to the electrostatic repulsion between the $TiO_2$-coated layers on the surface of the ${\alpha}-Fe_2O_3$ nanopowders. The results revealed that the $TiO_2$-coated layers modified the surface characteristics of the ${\alpha}-Fe_2O_3$ nanopowders and improved their dispersibility.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.258-263
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• 2019

Since the directly bonded interface between TiAl alloy and SCM440 includes lots of cracks and generated intermetallic compounds(IMCs) such as TiC, FeTi, and $Fe_2Ti$, the interfacial strength can be significantly reduced. Therefore, in this study, Cu is selected as an insert metal to improve the lower tensile strength of the joint between TiAl alloy and SCM440 during friction welding. As a result, newly formed IMCs, such as $Cu_2TiAl$, CuTiAl, and $TiCu_2$, are found at the interface between TiAl alloy and Cu layer and the thickness of IMCs layers is found to vary with friction time. In addition, to determine the relationship between the thickness of the IMCs and the strength of the welded interfaces, a tensile test was performed using sub-size specimens obtained from the center to the peripheral region of the friction-welded interface. The results are discussed in terms of changes in the IMCs and the underlying deformation mechanism. Finally, it is found that the friction welding process needs to be idealized because IMCs generated between TiAl alloy and Cu act to not only increase the bonding strength but also form an easy path of fracture propagation.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.3
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• pp.183-189
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• 2005

The effects of duplex-treatment of plasma carburization and CrN coating onto Ti-6Al-4V alloy on its creep properties were investigated by means of a constant stress creep tester. Applying duplex-treatment, specimens having an inner carburized layer of about $150{\mu}m$ in depth and outer CrN layer of about $7.5{\mu}m$ in thickness were prepared. The hardness of duplex-treatment surface was about 1,960 VHN. It also appeared that the duplex-treatment improved the roughness of the surface significantly; $Ra=0.045{\mu}m$ for treated alloy while $Ra=0.321{\mu}m$ for untreated alloy. The steady-state creep behaviors were investigated in a temperature range of $510{\sim}550^{\circ}C$ ($0.42{\sim}0.44T_m$) under an applied stress range of 200~275 MPa. The stress exponent, n, was derived assuming the power law creep behavior. The surface treatment showed a decrease in a value from 9.32 (untreated) to 8.79 (treated). Also the activation energy obtained from an Arrhenius plot increased from 238 to 257 kJ/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.