• Journal of the Korean institute of surface engineering
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• v.29 no.4
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• pp.261-267
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• 1996

The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• Journal of the Korean Professional Engineers Association
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• v.21 no.1
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• pp.5-12
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• 1988

The purpose of this paper is to investigate on the optimum coating thickness layer of TiC-Al$_2$O$_3$ coated cemented carbide tool. Chemical Vapor Deposition (CVD) of a thick film of TiC-A1$_2$O$_3$ on a cemented carbide produces an intermediate layer, $1.5mutextrm{m}$, 4.5${\mu}{\textrm}{m}$, 7.5${\mu}{\textrm}{m}$ 10.5${\mu}{\textrm}{m}$, 4 kind of TiC between the substrate and the $1.5mutextrm{m}$ constant thick A1$_2$O$_3$ coating. Experiments were carried out with the test relationship between coating thickness and shear angle, surface roughness, cutting force, microphotograph of crater wear, flank wear, tool life. From the experimental results, it was found that the optimum coating thickness of TiC-A1$_2$O$_3$ is 6${\mu}{\textrm}{m}$. Although the coating thickness layer 9${\mu}{\textrm}{m}$. 12${\mu}{\textrm}{m}$ have a much loger tool wear than an 3${\mu}{\textrm}{m}$, 6${\mu}{\textrm}{m}$ coating tool in cutting condition feed 0.05mm/rev, and the condition of feed 0.2mm/rev, 0.3mm/rev has upon in the shot time phenomenon of chipping.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.369-376
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• 2000

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt films thickness has been studied. As CoCrPt films thickness increase, the Ms(magnetization saturation) drastically increases at thinner thickness and gradually increases with further increase in thickness from 25nm. This Ms behaviour is associated with primarily the formation of "amorphous-like" reacted layer by intermixing of CoCrPt and Ti at CoCrPt/Ti interface and secondarily change of Cr segregation mode with varying the CoCrPt films thickness. Magnetic domain structure distinctively changes with increasing CoCrPt magnetic layer(ML) thickness. Also the strength of exchange coupling measured from the slope in demagnetizing region in M-H loop changes with ML thickness. Details of the above magnetic properties will be discussed. The expansion of lattice parameters a and c at thinner thickness suggests that Cr segregation mode may be connected with the residual stress of the films. Finally, negative nucleation field(Hn) behaviour with the exchange slope will be reported.

• Journal of Magnetics
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• v.6 no.1
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• pp.19-22
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• 2001

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt film thickness has been studied. As the CoCrPt film thickness increases from 25 nm, the Ms (saturation magnetization) increases rapidly at first and then more gradually. This Ms behavior is associated primarily with the formation of an "amorphous-like"reacted layer created by intermixing of CoCrPt and Ti at the CoCrPt/Ti interface and secondarily with a change of the Cr segregation mode with varying CoCrPt film thickness. Magnetic domain structure distinctively changes with increasing CsCrPt magnetic layer (ML) thickness. Also the strength of exchange coupling measured from the slope in the demagnetizing region of the M-H loop changes with ML thickness. The expansion of lattice parameters a and c at smaller film thickness suggests that the Cr segregation mode may be connected with the residual stress of the films. Finally, the negative nucleation field (Hn) shows a unique behavior with the change of strength of the exchange interaction.teraction.

• Journal of Korea Foundry Society
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• v.27 no.4
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• pp.179-183
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• 2007

The TiC layer was formed on Ti and Ti alloys by plasma carburizing method. The main experimental parameters for plasma car boozing were temperature and time. XRD, EDX, hardness test and corrosion test were employed to analyze the evolution and material properties of the layer. The preferred orientation of TiC layers is (220) at treated temperature of $700^{\circ}C\;and\;880^{\circ}C$ However, it is changed to (200) at temperature of $800^{\circ}C$ The thickness of carbide layer increase with increasing carburizing temperature. Highest hardness of hardened layer formed on CP-Ti was obtained at the carburizing condition of processing temperature $880^{\circ}C$ and processing time 1080min. The corrosion potential of carburizing specimen was higher than untreated CP-titanium, and corrosion potential increased as carburizing temperature and time increased. Thus the corrosion resistance of CP-Ti was greatly enhanced after plasma carburizing treatment.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.80-87
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• 1991

Investigations have been made in order to improve the toughness of TiC coated Cemented Carbide tools by CVD. The effects of coating parameters on TiC layer and eta phase and the effects of the thickness of TiC Coated layer and eta phase on TRS were studied.

• Journal of the Korean institute of surface engineering
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• v.30 no.5
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• pp.320-332
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• 1997

The development of colored surface on zinc coating by the oxidation of a melten alloy of zinc with a minor amount of oxygen-avid additive such as tianium has been studied. Using a galvanizing Zinc alloy containing 0.1 to 0.3wt%Ti, gold, purple or blue color was developed clearly and stably, depending upon the extent of oxidation, by air cooling after hot dipping in a bath at temperature of $550^{\circ}C$ to $600^{\circ}C$. The source of the color is light interference with surface oxide layer. THe final color depends on the thickness of the color depends on the thickness of $TiO_2$, played So compositing, temperature and time at elevated temperature after are all controlling variables. Since oxidation film such as $TiO_2$ played role of passivation film, the corrosion resistance in a colored galvanized steel sheet. It is also thought that surface oxide layer of $TiO_2$ inhibited dissolution of the coating layer.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.558-563
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• 2008

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.