• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Korean Journal of Poultry Science
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• v.24 no.2
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• pp.73-83
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• 1997

This study was conducted to investigate the influence of dietary $\omega$-fatty acids on fatty acids composition and storage characteristics in meat samples of spent hens. Spent hens were randomly assigned to one of the four dietary treatments : 1) Control (commercial feed), 2) T1 (commercial feed supplemented with 10% olive oil, 3) T2 (commercial feed with 10% canola oil), and 4) T3 (commercial feed with 10% sardine oil). They were fed one of the experimental diets for three weeks and slaughtered. The meat samples were stored at 4 ${\pm}$ 1 ˚C The storage characteristics and fatty acid contents were analyzed for meat samples stored over a period of 1, 3, 5, 7 and 9 days. The pH of all treatments significantly increased during the storage periods(P<0.05). The per-oxide values (POV) of all treatments were significantly increased up to 5 days ; after that the POV decreased significantly (P<0.05). The POV of treated groups were significantly higher than those of the Control in the thigh meat(P<0.05). The TBARS showed the highest POV among all treatments. Although the breast meat tended to he lower in POV than the thigh meat, no significant difference was detected between the two meats. The TBARS(thiobarbituric acid reactive substances) of all treatments were significantly increased as the storage period extended(P<0.05). After 3 days, the TB ARS of oil-treated groups were aignificantly higher than that of the Control (P<0.05). The T3 showed the highest TBARS among all treatments (P<0.05). The TBARS of the breast meat was lower than that of the thigh, but no statistical difference was found be- tween them. The unsaturated fatty acid content of the breast and thigh meats in all treatments were slightly decreased as the storage period extended. The oleic acid was higher in Ti, and the linoleic acid and linolenic acid were higher in T2 than the other treatments. The eicosapentaenoic acid and docosahexaenoic acid were higher in T3 than the other treatments. The unsaturated fatty acid contents of the breast meat were slightly lower than those of the thigh meat. The n-6 fatty acid contents of the breast and thigh meats were slightly increased as the storage periods ex-tended. The n-3 fatty acid content of T3 was the highest among all treatments. The n-6 fatty acid content of breast meat was lower than that of thigh meat. The n-6 fatty acid content of the breast meat was slightly lower than that of the thigh meat.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.3
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• pp.307-326
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• 2004

Statement of problem. The long-term success of implants is the development of a stable direct connection between bone and implant surface, which must be structural and functional. To improve a direct implant fixation to the bone, various strategies have been developed focusing on the surface of materials. Among them, altering the surface properties can modify cellular responses such as cell adhesion, cell motility and bone deposition. Purpose. This study was to evaluate the cellular behaviors on the surface-modified titanium by morphological observation, cellular proliferation and differentiation. Material and methods. Specimens were divided into five groups, depending on their surface treatment: electropolishing(EP) anoclizing(AN), machining(MA), blasting with hydroxyapatite particle(RBM) and electrical discharge machining(EDM). Physicochemical properties and microstructures of the specimens were examined and the responses of osteoblast-like cells were investigated. The microtopography of specimens was observed by scanning electron microscopy(SEM). Surface roughness was measured by a three-dimensional roughness measuring system. The microstructure was analyzed by X-ray diffractometer(XRD) and scanning auger electron microscopy(AES). To evaluate cellular responses to modified titanium surfaces, osteoblasts isolated from neonatal rat were cultured. The cellular morphology and total protein amounts of osteoblast-like cell were taken as the marker for cellular proliferation, while the expression of alkaline phosphatase was used as the early differentiation marker for osteoblast. In addition, the type I collagen production was determined to be a reliable indicator of bone matrix synthesis. Results. 1. Each prepared specimen showed specific microtopography at SEM examination. The RBM group had a rough and irregular pattern with reticulated appearance. The EDM-treated surface had evident cracks and was heterogeneous consisting of broad sheet or plate with smooth edges and clusters of small grains, deep pores or craters. 2. Surface roughness values were, from the lowest to the highest, electropolished group, anodized group, machined group, RBM group and EDM group. 3. All groups showed amorphous structures. Especially anodized group was found to have increased surface oxide thickness and EDM group had titaniumcarbide(TiC) structure. 4. Cells on electropolished, anodized and machined surfaces developed flattened cell shape and cells on RBM appeared spherical and EDM showed both. After 14 days, the cells cultured from all groups were formed to be confluent and exhibited multilayer proliferation, often overlapped or stratified. 5. Total protein amounts were formed to be quite similar among all the group at 48 hours. At 14 days, the electropolished group and the anodized group induced more total protein amount than the RBM group(P<.05). 6. There was no significant difference among five groups for alkaline phosphatase(ALP) activity at 48 hours. The AN group showed significantly higher ALP activity than any other groups at 14 days(P<.05). 7. All the groups showed similar collagen synthesis except the EDM group. The amount of collagen on the electropolished and anodized surfaces were higher than that on the EDM surface(P<.05).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.92-92
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• 2014

Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

• Economic and Environmental Geology
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• v.27 no.4
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• pp.345-361
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• 1994

Lens shaped titanomagnetite ore bodies in the Soyeonpyeong iron mine are embedded in amphibolites, which were intruded into Precambrian metasediments such as garnet-mica schist, marble, mica schist, and quartz schist. Mineral chemistry, K-Ar dating and hydrogen and oxygen stable isotopic analysis for the amphibolites and titanomagnetite ores were conducted to interpret petrogenesis of amphibolite and ore genesis of titanomagnetite iron ore deposits. Amphibolites of igneous origin have unusually high content of $TiO_2$, ranging from 0.94 to 6.39 wt.% with an average value of 4.05 wt.%. REE patterns of the different lithology of the amphibolite show the similar trend with an enrichment of LREE. Amphiboles of amphibolites are consist mainly of calcic amphiboles such as ferro-hornblende, tschermakite, ferroan pargasite, and ferroan pargasitic hornblende. K-Ar ages of hornblende from amphibolite and gneissic amphibolite were determined as $440.04{\pm}6.39Ma$ and $351.03{\pm}5.21Ma$, respectively. This indicates two metamorphic events of Paleozoic age in the Korean peninsula which are correlated with Altin orogeny in China. The titanomagnetite mineralization seems to have occurred before Cambrian age based on occurrence of orebodies and ages of host amphibolites. The Soyeonpyeong iron ores are composed mainly of titanomagnetite, ilmenite, and secondary minerals such as ilmenite and hercynite exsolved in titanomagnetite. The temperature and the oxygen fugacity estimated by the titanomagnetite-ilmenite geothermometer are $500{\sim}600^{\circ}C$ (ave. $550^{\circ}C$) and about $2{\pm}10^{-23}bar$, respectively. Hornblendes from ores and amphibolites which responsible for magnetite ore mineralization, have a relatively homogeneous isotopic composition ranging from +0.8 to +3.9 ‰ in ${\delta}^{18}O$ and from -87.8 to -113.3 ‰ in ${\delta}D$. The calculated oxygen and hydrogen isotopic compositions of the fluids which were in equilibrium with hornblende at $550^{\circ}C$, range from 2.8 to 5.9‰ in ${\delta}^{18}O_{H2O}$ and from -60.41 to -81.31 ‰ in ${\delta}D_{H2O}$. The ${\delta}^{18}O_{H2O}$ value of magnetite ore fluids are in between +6.4 to + 7.9 ‰. All of these values fall in the range of primary magmatic water. A slight oxygen shift means that $^{18}O$-depleted meteoric water be acted with basic fluids during immiscible processes between silicate and titaniferous oxide melt. Mineral chemistry, isotopic compositions, and occurences of amphibolites and orebodies, suggest that the titanomagnetite melt be separated immisciblely from the titaniferous basic magma.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Nuclear Engineering and Technology
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• v.50 no.5
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• pp.665-672
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• 2018

A venturi scrubber is an important element of Filtered Containment Venting System (FCVS) for the removal of aerosols in contaminated air. The present work involves computational fluid dynamics (CFD) study of dust particle removal efficiency of a venturi scrubber operating in self-priming mode using ANSYS CFX. Titanium oxide ($TiO_2$) particles having sizes of 1 micron have been taken as dust particles. CFD methodology to simulate the venturi scrubber has been first developed. The cascade atomization and breakup (CAB) model has been used to predict deformation of water droplets, whereas the Eulerian-Lagrangian approach has been used to handle multiphase flow involving air, dust, and water. The developed methodology has been applied to simulate venturi scrubber geometry taken from the literature. Dust particle removal efficiency has been calculated for forced feed operation of venturi scrubber and found to be in good agreement with the results available in the literature. In the second part, venturi scrubber along with a tank has been modeled in CFX, and transient simulations have been performed to study self-priming phenomenon. Self-priming has been observed by plotting the velocity vector fields of water. Suction of water in the venturi scrubber occurred due to the difference between static pressure in the venturi scrubber and the hydrostatic pressure of water inside the tank. Dust particle removal efficiency has been calculated for inlet air velocities of 1 m/s and 3 m/s. It has been observed that removal efficiency is higher in case of higher inlet air velocity.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.139-139
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• 2010

금속 실리사이드 나노입자는 열적 및 화학적 안정성이 뛰어나고, 절연막내에 일함수 차이에 따라 깊은 양자 우물구조가 형성되어 비휘발성 메모리 소자를 제작할 수 있다. 그러나 단일 $SiO_2$ 절연막을 사용하였을 경우 저장된 전하의 정보 저장능력 및 쓰기/지우기 시간을 향상시키는 데 물리적 두께에 따른 제한이 따른다. 본 연구에서는 터널장벽 엔지니어링을 통하여 물리적인 두께는 단일 $SiO_2$ 보다는 두꺼우나 쓰기/지우기 동작을 위하여 인가되는 전기장에 의하여 상대적으로 전자가 느끼는 상대적인 터널 절연막 두께를 감소시키는 방법으로 동작속도를 향상 시킨 $SiO_2/Si_3N_4/SiO_2$ 및 $Si_3N_4/SiO_2/Si_3N_4$ 터널 절연막을 사용한 금속 실리사이드 나노입자 비휘발성 메모리를 제조하였다. 제조방법은 우선 p-type 실리콘 웨이퍼 위에 100 nm 두께로 증착된 Poly-Si 층을 형성 한 이후 소스와 드레인 영역을 리소그래피 방법으로 형성시켜 트랜지스터의 채널을 형성한 이후 그 상부에 $SiO_2/Si_3N_4/SiO_2$ (2 nm/ 2 nm/ 3 nm) 및 $Si_3N_4/SiO_2/Si_3N_4$ (2 nm/ 3 nm/ 3 nm)를 화학적 증기 증착(chemical vapor deposition)방법으로 형성 시킨 이후, direct current magnetron sputtering 방법을 이용하여 2~5 nm 두께의 $WSi_2$ 및 $TiSi_2$ 박막을 증착하였으며, 나노입자 형성을 위하여 rapid thermal annealing(RTA) system을 이용하여 $800{\sim}1000^{\circ}C$에서 질소($N_2$) 분위기로 1~5분 동안 열처리를 하였다. 이후 radio frequency magnetron sputtering을 이용하여 $SiO_2$ control oxide layer를 30 nm로 증착한 후, RTA system을 이용하여 $900^{\circ}C$에서 30초 동안 $N_2$ 분위기에서 후 열처리를 하였다. 마지막으로 thermal evaporator system을 이용하여 Al 전극을 200 nm 증착한 이후 리소그래피와 식각 공정을 통하여 채널 폭/길이 $2{\sim}5{\mu}m$인 비휘발성 메모리 소자를 제작하였다. 제작된 비휘발성 메모리 소자는 HP 4156A semiconductor parameter analyzer와 Agilent 81101A pulse generator를 이용하여 전기적 특성을 확인 하였으며, 측정 온도를 $25^{\circ}C$, $85^{\circ}C$, $125^{\circ}C$로 변화시켜가며 제작된 비휘발성 메모리 소자의 열적 안정성에 관하여 연구하였다.

• Proceedings of the Mineralogical Society of Korea Conference
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• 2003.05a
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• pp.67-67
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• 2003

The chemical compositions and textural relationships of the Nb-Zr oxide minerals including pyrochlore [ideally (Ca,Na)$_2$Nb$_2$O$\sub$6/(OH,F), with up to 24% UO$_2$ and 16% Ta$_2$O$\sub$5/] and baddeleyite [ideally ZrO$_2$, with up to 6% Nb$_2$O$\sub$5/] in the Sokli carbonatite complex, Kola Peninsula, Arctic are described. These two minerals in carbonatites are the major hosts for the HFSEs such as U, Th, Ta, Nb, Zr and Hf and thus are interest both economically and petrologically. The Sokli carbonatite complex (360-370 Ma) in Northern Finland, which forms a part of the Paleozoic Kola Alkaline Province (KAP), is mainly composed of multi-stages of carbonatite and phoscorite associations (P1-C1 P2-C2, P3-C3, D4 and D5) surrounded by altered ultramafic rocks (olivinite and pyroxenite) and cut by numerous small dikes of ultramafic lamprophyre. The Sokli complex contains the highest concentration in niobium and probably in tantalum, which are economically very important to modern steel technology, among the ultramafic-alkaline complexes of the KAP. Pyrochlore and baddeleyite mostly concentrate in the phoscorites. Pyrochlores in the Sokli complex are generally rounded octahedra and cubes in shape, red brown to grey yellow in color, and 0.2 to 5 mm in size. They are found in all calcite carbonatites, phoscorites and dolomite carbonatites, except P1-C1 rocks. These pyrochlores display remarkable zonations which depend on host rock compositions, and have significant compositional variations with evolution of the Sokli complex. The common variation scheme is that (1) early pyrochlore is highly enriched in U and Ta; (2) these elements decrease abruptly in the intermediate stage, while Th and Ce increase, and (3) late stage pyrochlore is low in U, Ta, Th, and Ce, and correspondingly high in Nb. Baddeleyites in the Sokli complex occur in the early P1-C1 and P2-C2 rocks and rarely in P3. They crystallized earlier than pyrochlores, and occasionally show post-magmatic corrosion and replacement. The FeO and TiO$_2$ contents of baddeleyites are much lower than those of the other terrestrial and lunar baddeleyites, whereas Nb$_2$O$\sub$5/ and Ta$_2$O$\sub$5/ contents are the highest among the reported compositions. Ta/Nb and Zr/Nb ratios of pyrochlores and baddeleyites decrease towards later stage facies, which is in accordance with the whole rock compositions. The variation of Ta/Nb and Zr/Nb ratios of pyrochlores and baddeleyites is considered to be a good indicator to trace an evolution of the carbonatite complexes.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.