• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Corrosion Science and Technology
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• 제7권4호
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• Bulletin of the Korean Chemical Society
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• 제12권1호
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• pp.17-22
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• 1991

Fourier transform infrared spectroscopy has been applied to the characterization of titania supported molybdena. The equilibrium adsorption method seemed to produce molybdena species homogeneously dispersed on the support. Even under an oxidizing environment, molybdena species appeared to be able to possess coordinatively unsaturated $Mo^{5+}$ ions owing to the natures of TiO$_2$, i.e. oxygen deficiency and permeability toward oxygen diffusion. At the initial stage of reduction, the terminal double bond oxygen ( Mo=O ) seemed to be removed, generating presumably $Mo^{4+}$. The carbonyl bands at 2198 and 2190 $cm^{-1}$ observed after CO exposure were attributed to the $Mo^{5+}{\cdots}CO\;and\;Mo^{4+}\;{\cdots}CO$ complexes, respectively, while the band pair at 2136 and 2076 $cm^{-1}$ to $Mo^{4+}(CO)_2$.

• 한국표면공학회지
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• 제52권1호
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• pp.1-5
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• 2019

Anodic oxidized $TiO_2$ nanotube arrays are promising materials for application in photoelectrochemical solar cells as the photoanode, because of their attractive properties including slow electron recombination rate, superior light scattering, and smooth electrolyte diffusion. However, because of the opacity of these nanotube electrodes, the back-side illumination is inevitable for the application in solar cells. Therefore, for the fabrication of solar cells with the anodic oxidized nanotube electrodes, it is required to develop efficient and transparent counter electrodes. Here, we demonstrate quantum dot-sensitized solar cells (QDSCs) based on the nanotube photoanode and transparent counter electrodes. The transparent counter electrodes based on Pt electrocatalysts were prepared by a simple thermal decomposition methods. The photovoltaic performances of QDSCs with nanotube photoanode were tested and optimized depending on the concentration of Pt precursor solutions for the preparation of counter electrodes.

• 한국재료학회지
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• 제13권1호
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• pp.1-5
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• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• 대한전자공학회논문지SD
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• 제48권2호
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• pp.14-19
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• 2011

본 논문에서 실리콘 기판 위에 성장된 GaN 에피탁시를 활용하여 고전압 쇼트키 장벽 다이오드를 제작하였으며, 금속-반도체 접합의 열처리 조건에 따른 GaN 완충층 (buffer layer) 누설전류와 제작된 다이오드의 전기적 특성 변화를 연구하였다. Ti/Al/Mo/Au 오믹 접합과 Ni/Au 쇼트키 접합이 제작된 소자에 설계 및 제작되었다. 메사를 관통하는 GaN 완충층의 누설전류를 측정하기 위하여 테스트 구조가 제안되었으며 제작하였다. $700^{\circ}C$에서 열처리한 경우 100 V 전압에서 측정된 완충층의 누설전류는 87 nA이며, 이는 $800^{\circ}C$에서 열처리한 경우의 완충층의 누설전류인 780 nA보다 적었다. GaN 쇼트키 장벽 다이오드의 누설전류 메커니즘을 분석하기 위해서 Auger 전자 분광학 (Auger electron spectroscopy) 측정을 통해 GaN 내부로 확산되는 Au, Ti, Mo, O 성분들이 완충층 누설전류 증가에 기여함을 확인했다. 금속-반도체 접합의 열처리를 통해 GaN 쇼트키장벽 다이오드의 누설전류를 성공적으로 감소시켰으며 높은 항복전압을 구현하였다.

• Bulletin of the Korean Chemical Society
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• 제2권3호
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• pp.96-104
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• 1981

(1) The flow data of f (stress) and ${\dot{s}$ (strain rate) for Fe and Ti alloys were plotted in the form of f vs. -ln ${\dot{s}$ by using the literature values. (2) The plot showed two distinct patterns A and B; Pattern A is a straight line with a negative slope, and Pattern B is a curve of concave upward. (3) According to Kim and Ree's generalized theory of plastic deformation, pattern A & B belong to Case 1 and 2, respectively; in Case 1, only one kind of flow units acts in the deformation, and in Case 2, two kinds flow units act, and stress is expressed by $f={X_1f_1}+{X_2f_2}$where $f_1\;and\;f_2$ are the stresses acting on the flow units of kind 1 and 2, respectively, and $X_1,\;X_2$ are the fractions of the surface area occupied by the two kinds of flow units; $f_j=(1/{\alpha}_j) sinh^{-1}\;{\beta}_j{{\dot{s}}\;(j=1\;or\;2)$, where $1/{\alpha}_j\;and\;{\beta}_j$ are proportional to the shear modulus and relaxation time, respectively. (4) We found that grain-boundary flow units only act in the deformation of Fe and Ti alloys whereas dislocation flow units do not show any appreciable contribution. (5) The deformations of Fe and Ti alloys belong generally to pattern A (Case 1) and B (Case 2), respectively. (6) By applying the equations, f=$(1/{\alpha}_{g1}) sinh^-1({\beta}_{g1}{\dot{s}}$) and $f=(X_{g1}/{\alpha}_{g1})sinh^{-1}({\beta}_{g1}{\dot{s}})+ (X_{g2}/{\alpha}_{g2})\;shih^{-1}({\beta}_{g2}{\dot{s}})$ to the flow data of Fe and Ti alloys, the parametric values of $x_{gj}/{\alpha}_{gj}\;and\;{\beta}_{gs}(j=1\;or\;2)$ were determined, here the subscript g signifies a grain-boundary flow unit. (7) From the values of ($({\beta}_gj)^{-1}$) at different temperatures, the activation enthalpy ${\Delta}H_{gj}^{\neq}$ of deformation due to flow unit gj was determined, ($({\beta}_gj)^{-1}$) being proportional to , the jumping frequency (the rate constant) of flow unit gj. The ${\Delta}H_{gj}\;^{\neq}$ agreed very well with ${\Delta}H_{gj}\;^{\neq}$ (self-diff) of the element j whose diffusion in the sample is a critical step for the deformation as proposed by Kim-Ree's theory (Refer to Tables 3 and 4). (8) The fact, ${\Delta}H_{gj}\;^{\neq}={\Delta}H_{j}\;^{\neq}$ (self-diff), justifies the Kim-Ree theory and their method for determining activation enthalpies for deformation. (9) A linear relation between ${\beta}^{-1}$ and carbon content [C] in hot-rolled steel was observed, i.e., In ${\beta}^{-1}$ = -50.2 [C] - 40.3. This equation explains very well the experimental facts observed with regard to the deformation of hot-rolled steel..

• Journal of Magnetics
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• 제17권2호
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• pp.153-157
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• 2012

This study evaluated the ability of Diffusion-Weight Image (DWI), which is one of pulse sequences used in MRI based on the T2 weighted images, to detect samples placed within phantoms according to their size. Two identically sized phantoms, which could be inserted into the breast coil bilaterally, were prepared. Five samples with different sizes were placed in the phantoms, and the T2 weighted images and DWI were obtained. The Breast 2 channel coil of SIEMENS MAGNETOM Avanto 1.5 Tesla equipment was used for the experiments. 2D T2 weighted images were obtained using the following parameters: TR/TE = 6700/74 msec, Thickness/gap = 5/1 mm, Inversion Time (TI) = 130 ms, and matrix = $224{\times}448$. The parameters of DWI were that TR/TE = 8100/90 msec, Thickness/gap = 5/1 mm, matrix = $128{\times}128$, Inversion Time = 185 ms, and b-value = 0, 100, 300, 600, 1000 s/mm. The ratio of the sample volume on DWI compared to the T2 weighted images, which show excellent ability to detect lesions on MR images, was presented as the mean b-value. The measured b-value of the samples was obtained: 0.5${\times}$0.5 cm=0.33/0.34 square ${\times}$ cm (103%), 1${\times}$1 cm=1.28/1.25 square ${\times}$ cm (102.4%), 1.5${\times}$1.5 cm = 2.28/2.67 square ${\times}$ cm (85.39%), 2${\times}$2 cm=3.56/4.08 square ${\times}$ cm (87.25%), and 2.5${\times}$2.5 cm=7.53/8.77 square ${\times}$ cm (85.86%). In conclusion, the detection ability by the size of a sample was measured to be over 85% compared to T2 weighted image, but the detection ability of DWI was relatively lower than that of T2 weighted image.