• Bulletin of the Korean Chemical Society
• /
• v.34 no.9
• /
• pp.2765-2768
• /
• 2013

The effect of $TiO_2$ nanorods (TNR) and nanoparticles (TNP) composite photoelectrodes and the role of TNR to enhance the energy conversion efficiency in dye-sensitized solar cells (DSSCs) was investigated. The 5% TNR content into the TNP photoelectrode significantly increased the short-circuit current density ($J_{sc}$) and the open-circuit potential ($V_{oc}$) with the overall energy conversion efficiency enhancement of 13.6% compared to the pure TNP photoelectrode. From the photochemical and impedemetric analysis, the increased $J_{sc}$ and $V_{oc}$ for the 5% TNR/TNP composite photoelectrode was attributed to the scattering effect of TNR, reduced electron diffusion path and the suppression of charge recombination between the composite photoelectrode and electrolyte or dye.

• Korean Journal of Materials Research
• /
• v.19 no.2
• /
• pp.85-89
• /
• 2009

Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.

• Journal of Powder Materials
• /
• v.16 no.5
• /
• pp.305-309
• /
• 2009

The effect of light scattering layers (400 nm, TiO$_2$ particle) of 4 $\mu$m thickness on the dye-sensitized solar cell has been investigated with a 12 $\mu$m thickness of photo-anode (20 nm, TiO$_2$ particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 $\mu$m, back: 2 $\mu$m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm$^2$) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 $\mu$m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.263-266
• /
• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.395-397
• /
• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.17-18
• /
• 2008

In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.1
• /
• pp.58-66
• /
• 2002

Acousto-optical wavelength tunable optical filters in LiNbO$_3$ have been demonstrated using taperd directional weighted coupling acoustic waveguides and Ti double diffusion technique. Conversion efficiency in excess of 61%, 86% and sidelobe intensity of -14.29㏈, -14.99㏈ were measured at a wavelength of 1551.1nm RF frequency of 173.58MHz and RF power of 35㎽ for both TE and TM input polarizations, respectivelv. A spectral width of ~l.8nm and linear tuning late of 8.6nm/MHz were demonstrated. A 2.82$mutextrm{s}$ switching time has been measured. With two channels with 2.5nmseparation, channel cross-talk was lower than -l4㏈ for single wavelength filtering due to sidelobe.

• Korean Journal of Optics and Photonics
• /
• v.11 no.3
• /
• pp.193-197
• /
• 2000

A polarized mode convertible, wavelength tunable optical filters with acoustic barriers and acousto-optic effect have been produced in LiNb03 substrate utilizing the Ti double diffusion technique. Polarization conversion in excess of 81 % and a spectral width of -200 kHz (-1.83 nm) were achieved at a wavelength of 1551.6 nm and RF frequencies of 173.07 kHz and 173.05 kHz for both transverse electric (TE) and transverse magnetic (lM) input polarizations, respectively. The electrical driving power was 10.97 mW and reduced to about 10% of one for an optical filter without an acoustic barrier. A linear tuning rate of 8.2 nmlMHz and sidelobe intensity of -4 dB was demonstrated. rated.

• Korean Journal of Materials Research
• /
• v.8 no.5
• /
• pp.470-473
• /
• 1998

$As^+$ was ion-implanted onto $CoSi_{2}$ thin films formed by rapidly thermal-annealed Co/Ti bilayers. Then the specimens were drive-in annealed at 500~100$0^{\circ}C$ to form ultra-shallow $n^+$p junction diodes and to measure their 1- V characteristics. When drive-in annealed at 50$0^{\circ}C$ for 280 sec., 50 nm thick ultra-shallow junctions were formed and di¬odes showed the best 1- V characteristics with low leakage current. In particular. the leakage current was 2 orders lower than that of diodes formed by using Co monolayer. It was attributed to uniform $CoSi_{2}$/Si interfaces.

• Applied Science and Convergence Technology
• /
• v.23 no.2
• /
• pp.72-82
• /
• 2014

Lithium-ion batteries (LIBs) have become popular electrochemical devices. Due to the unique advantages of LIBs in terms of high operating voltage, high energy density, low self-discharge, and absence of memory effects, their application range, which was primarily restricted to portable electronic devices, is now being extended to high-power applications, such as electric vehicles (EVs) and hybrid electrical vehicles (HEVs). Among various anode materials, $Li_4Ti_5O_{12}$ (LTO) is believed to be a promising anode material for high-power LIBs due to its advantages of high working potential and outstanding cyclic stability. However, the rate performance of LTO is limited by its intrinsically low electronic conductivity and poor $Li^+$ ion diffusion coefficient. This review highlights the recent progress in improving the rate performance of LTO through doping, compositing, and nanostructuring strategies.