• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.486-491
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• 2006

A new $TiN-Ti_5Si_3$ bulk composite was synthesized from preceramic, inorganic polymer (methylpolysilsesquioxane) and $TiH_2$ filler powders via polymer pyrolysis. Using this process, ceramics with high melting points can be produced relatively easily to a near net shape. The $TiN-Ti_5Si_3$ composite oxidized slowly during heating to $1000^{\circ}C$. During heating at the temperatures of at 700 and $800^{\circ}C$, TiN oxidized to Rutile-$TiO_2$ whereas $Ti_5Si_3$ resisted to oxidation. The oxide scale formed consisted primarily of $TiO_2$ containing $Ti_5Si_3$.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.152-157
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• 2004

Ti-Al-N ($Ti_{75}$ $Al_{25}$ N) and Ti-Al-Si-N ($Ti_{69}$ $Al_{23}$ $Si_{8}$N) coatings synthesized by a DC magnetron sputtering technique were studied comparatively with respect to phase characterization and high-temperature oxidation behavior. $Ti_{69}$ $Al_{23}$ $Si_{ 8}$N coating had a nanocomposite microstructure consisting of nanosized(Ti,Al,Si)N crystallites and amorphous $Si_3$$N_4$, with smooth surface morphology. Ti-Al-N coating of which surface $Al_2$$O_3$ layer formed during oxidation suppressed further oxidation. It was sufficiently stable against oxidation up to about $700^{\circ}C$. Ti-Al-Si-N coating showed better oxidation resistance because both surface Ab03 and near-surface $SiO_2$ layers suppressed further oxidation. XRD, GDOES, XPS, and scratch tests were performed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1223-1225
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• 1994

The properties of $TiN/TiSi_2$ bilayer formed by a rapid thermal anneal ing is investigated when thin $SiO_2$ film exists at the Ti-Si interface. The competitive reaction for the $TiN/TiSi_2$ bilayer occurs above $600^{\circ}C$. The thickness of the $TiSi_2$ layer decreases with increasing $SiO_2$ film thickness while the TiN layer increases at the competitive reaction. The composition of TiN layer is changed to the $TiN_xO_y$ film due to the thin $SiO_2$ layer at the Ti-Si interface while the structure of the TiN and $TiSi_2$ layers was not changed.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.166-168
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• 2006

$Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.104-104
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• 2016

음극아크증착과 스퍼터링을 동시에 사용한 하이브리드 공정으로 제조된 TiAlSiN 코팅층의 물성을 평가하였다. TiAlSiN 코팅층은 음극아크 소스에 Ti-Al 타겟을 장착하고 스퍼터링 소스에는 Si 타겟을 장착하여 아르곤과 질소 가스의 혼합가스 분위기에서 스테인리스(SUS304)와 초경(cemented carbide; WC-15wt.%Co) 기판 위에 제조되었다. 음극아크 소스에 인가되는 전류는 고정하고 스퍼터링 소스에 인가되는 전력을 조절하여 TiAlSiN 코팅층의 Si 함량을 제어하였다. TiAlSiN 코팅층의 Si 함량이 증가하면 코팅층의 구조가 주상정에서 비정질 구조로 변화한다. 이는 Si 함량이 증가하면 코팅층에 형성되는 알갱이 구조의 크기가 줄어들기 때문이다. X-선 회절 결과와 Scherrer's equation을 이용하여 Si 함량에 따른 알갱이 구조의 크기를 계산하면 Si이 없는 코팅층은 약 14 nm의 크기를 보이며 8 at.% 이상의 함량에서 약 2.5 nm로 포화된다. TiAlSiN 코팅층의 경도를 Si 함량에 따라 측정하면 Si 함량이 증가하면 경도도 증가하는 경향을 보이며 약 9 at.%의 Si 함량에서 3200 Hv로 최대가 되고 이후에는 감소한다. TiAlSiN이 코팅된 스테인리스 시편을 대기에서 열처리하고 시편 무게증가를 측정하여 코팅층의 내열성을 평가하였다. Si 함량이 증가하면 내열성도 향상되는데 14.4 at.%의 Si 함량에서 $700^{\circ}C$까지 무게 증가가 없으며 $900^{\circ}C$까지 0.43 mg의 증가를 보인다. 본 실험을 통해서 얻어진 TiAlSiN 코팅층은 비교적 높은 경도와 내열성을 확보하여 절상공구 보호막 코팅 소재 등으로 활용이 가능할 것으로 판단된다.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1995.06a
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• pp.11-17
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• 1995

본 연구에서는 SiC 및 SiC-TiB$_{2}$복합재료의 마모 및 마모천이기구를 비교 실험한 결과 다음과 같은 결론을 얻었다. 두 재료의 마모천이현상은 각각의 하중이 200N(SiC)과 80N(SiC-TiB$_{2}$)이상에서 나타나게 되었다. 마모기구는 임계미끄럼시간에서 두 단계로 나뉘어진다. 소성변형에 의한 grooving과정과 잔류응력에 의한 grain pull-out과정들로써 미세 구조를 통해 관찰할 수 있었다. grain pull-out과정은 초기단계에서 부터 생성된 전위가 축적되어 잔류응력을 발생시키므로 일어난 과정이다. SiC에 TiB$_{2}$를 첨가하므로 마모는 더욱 심하게 일어나게 되었다. 입계의 강도를 더 약하게 하였기 때문이다. 그러나, 파괴인성은 입계강도가 약할수록 증가하였다. 결국 파괴인성이 큰 재료가 마모는 더 심하게 일어남으로 서로 상반된 관계를 갖고 있슴을 결론지을 수 있었다.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.835-838
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• 1992

The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.68-68
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• 2015

질화 티타늄(titanium nitride; TiN)은 색상이 미려하고 물리적 특성이 우수한 특성에도 불구하고 내산화성이 낮아 이를 해결하기 위해서 TiN에 Al을 첨가한 TiAlN 소재가 개발되었다. 하지만 난삭재 가공용 공구의 사용 온도가 $800^{\circ}C$이상인 점을 고려하여 $800^{\circ}C$ 이상의 고온 환경에서도 산화가 일어나지 않는 고경도 박막 소재가 요구되고 있으며 TiAlN 소재에 Si을 첨가하면 내산화성이 향상된다는 연구결과가 보고되고 있다. 본 연구에서는 음극 아크 증착과 스퍼터링을 동시에 이용한 하이브리드 공정으로 제조한 TiAlSiN 박막의 Si 함량에 따른 미세구조, 물리적 특성 그리고 내산화성을 평가하였다.