• Journal of the Korean Electrochemical Society
• /
• v.24 no.4
• /
• pp.100-105
• /
• 2021

Recently, all-solid-state batteries have attracted much attention to improve safety of rechargeable lithium batteries, but the solid-state batteries of conductive ceramics or solid polymer electrolytes show poor electrochemical properties because of several problems such as high interfacial resistance and undesired reactions. To solve the problems of the reported all-solid-state batteries, a hybrid solid electrolyte is suggested, in this study, NASICON-type nanoparticle Li_1.5Al_0.5Ti_1.5P₃O₁₂ (LATP) conductive ceramic, PVdF-HFP, and a carbonate-based liquid electrolyte were composited to prepare a quasi-solid electrolyte. The hybrid solid electrolyte has a high voltage stability of 5.6 V and shows an suppress effect of lithium dendrite growth in the stripping-plating test. The LiNi_0.83Co_0.11Mn_0.06O₂ (NCM811)-based battery with the hybrid solid electrolyte exhibits a high discharge capacity of 241.5 mAh/g at a high charge-cut-off voltage of 4.8V and stable electrochemical reaction. The NCM811-based battery also shows 139.4 mAh/g discharge capacity without short circuit or explosion at 90℃. Therefore, the LATP-based hybrid solid electrolyte can be an effective solution to improve the safety and electrochemical properties of rechargeable lithium batteries.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.218-218
• /
• 2012

Nanocrystalline $SnO_2$ colloids are synthesized by hydrolysis of $SnCl_4{\cdot}5H_2O$ in aqueous ammonia solution. The synthesized $SnO_2$ nanoparticles with ca. 15 nm in diameter are coated on a fluorinedoped thin oxide (FTO) conductive substrate and heated at $550^{\circ}C$. The annealed $SnO_2$ film is treated with aqueous $TiCl_4$ solution, which is sensitzied with MK-2 dye (2-cyano-3-[5'''-(9-ethyl- 9H-carbazol-3-yl)-3',3'',3''',4-tetra-n-hexyl-[2,2',5',2'',5'',2''']-quater thiophen-5-yl]). Compared to bare $SnO_2$ film, the conversion efficiency is significantly improved from 0.22% to 3.13% after surface treatment of $SnO_2$ with $TiCl_4$, which is mainly due to the large increases in both photocurrent density from 1.33 to $9.46mA/cm^2$ and voltage from 315 to 634 mV. It is noted that little change in the amount of the adsorbed dye is detected from 1.21 for the bare $SnO_2$ to $1.28{\mu}mol/cm^2$ for the $TiCl_{4-}$ treated $SnO_2$. This indicates that the photocurrent density increased by more than 6 times is not closely related to the dye loading concentration. From the photocurrent and voltage transient spectroscopic studies, electron life time increases by about 13 order of magnitude, whereas electron diffusion coefficient decreases by about 3.6 times after $TiCl_4$ treatment. Slow electron diffusion rate offers sufficient time for regeneration kinetics. As a result, charge collection efficiency of about 40% before $TiCl_4$ treatment is improved to 95% after $TiCl_4$ treatment. The large increase in voltage is due to the significant increase in electron life time, associated with upward shift of fermi energy.

• Journal of Sensor Science and Technology
• /
• v.9 no.3
• /
• pp.242-247
• /
• 2000

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3(PNZST)$ thin films were deposited by RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3(LSCO)/Pt/Ti/SiO_2/Si$ substrate using a PNZST target with excess PbO of 10 mole%. The thin films deposited at substrate temperature of $500^{\circ}C$, and at RF power of 80W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at $650^{\circ}C$ for 10 seconds in air exhibited the good structures and electrical properties. The fabricated PNZST capacitor had a remanent polarization value of about $20\;{\mu}C/cm^2$ and coercive field of about 50 kV/cm. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Electrical & Electronic Materials
• /
• v.3 no.4
• /
• pp.339-346
• /
• 1990

미소변위소자에 적합한 전왜세라믹스를 제조하기 위하여 0.85Pb(Zn$_{1}$3-x/MgxNb$_{2}$3/) $O_{3}$-0.10BaTi $O_{3}$-0.05PbTi $O_{3}$조성으로 Mg(mol%)를 변화시키면서 시편을 제조하고 구조적, 유전적, 전기적 특성 및 온도 안정성을 관찰하였다. 큐리온도는 Mg(mol%)가 증가함에 따라 감소하였고 Mg(mol%)가 0.15일 때 유전상수가 가장 높았으며 완만도는 -3.9, 산만도.DELTA.Tc는 21로 가장 컸다. 전계에 따른 유전상수는 감소하였고 Mg(mol%)가 증가할수록 압전정수 d$_{31}$은 감소하였으나 0.05, 0.10, 0.15일 때는 거의 일정하였다. Mg(mol%)가 0.15까지 증가함에 따라 전왜정수 Q$_{31}$은 감소하였고 그 이상에서는 Mg(mol%)가 1/3일때 가장 컸으며 ES-1시편에서의 AC 60(Hz), 11(kV/cm) 전계(electric field)에 의한 왜형을 253*$10^{-6}$을 나타냈다.

• Electrical & Electronic Materials
• /
• v.6 no.3
• /
• pp.241-247
• /
• 1993

본 연구에서는 투광성 0.085Ba(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- 0.915Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(0.45.leq.y.leq.0.70)세라믹을 2단 소성법으로 제작한 후, PbZr $O_{3}$조성 및 온도에 따른 구조적, 강유전적특성을 측정하였다. XRD측정 결과, PbZr $O_{3}$조성이 감소할수록 결자상수 및 단위격자 체적은 감소하였으며 시편의 결정구조는 입방정계에서 능면체정계, 정방정계로 변화되었다. 8.5/60/40시편의 경우 포화분극, 잔류분극 및 항전계가 각각 33.28[.mu.C/$cm^{2}$], 4.15[kV/cm]로 전형적인 메모리 특성을 나타내었으며 PbZr $O_{3}$조성이 증가함에 따라 강유전 이력곡선은 slim loop특성을 나타내었다. 잔류분극은 온도가 증가함에 따라 감소하였으며 특히 PE-FE상경계 부근에 위치한 조성의 경우, 상전이 온도 이하의 온도에서 급격히 감소하는 경향을 나타내었다.다.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.24-27
• /
• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Korean Journal of Materials Research
• /
• v.21 no.7
• /
• pp.384-390
• /
• 2011

Ti-6Al-4V ELI (Extra Low Interstitial) alloy has been widely used as an alternative to bone due to its excellent biocompatibility. However, it still has many problems, including a high elastic modulus and toxicity. Therefore, nontoxic biomaterials with a low elastic modulus should be developed. However, the fabrication of a uniform coating is challenging. Moreover, the coating layer on Ti and Ti alloy substrates can be peeled off after implantation. To overcome these problems, it is necessary to produce bulk Ti and Ti alloy with hydroxyapatite (HA) composites. In this study, Ti, Nb, and Zr powders, which are biocompatible elements, were milled in a mixing machine (24h) and by planetary mechanical ball milling (1h, 4h, and 6h), respectively. Ti-35%Nb-7%Zr and Ti-35%Nb-7%Zr-10%HA composites were fabricated by spark plasma sintering (SPS) at $1000^{\circ}C$ under 70MPa using mixed and milled powders. The effects of HA addition and milling time on the biocompatibility and physical and mechanical properties of the Ti-35%Nb-7%Zr-(10%HA) alloys have been investigated. $Ti_2O$, CaO, $CaTiO_3$, and $Ti_xP_y$ phases were formed by chemical reaction during sintering. Vickers hardness of the sintered composites increases with increased milling time and by the addition of HA. The biocompatibilty of the HA added Ti-Nb-Zr alloys was improved, but the sintering ability was decreased.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.6
• /
• pp.707-712
• /
• 2012

Very high cycle fatigue (VHCF) behavior of aerospace components has emerged much attention due to their long service life. In this study, a piezoelectric ultrasonic fatigue testing (UFT) system has been developed by Mbrosiatec Co., Ltd. to study the high cycle fatigue (HCF) strength of Ti-6Al-4V alloy. Hourglass-shaped specimens have been investigated in the range from $10^6$ to $10^9$ cycles at room temperature under completely reversed R = -1 loading conditions,. Scanning electron microscopy (SEM) analysis revealed that failures occurred in the entire range up to the gigacycle regime, and the fractures have beenfound to be initiated from the surface, unlike in steels. However, it was found from the SEM microgprahs that microcracks transformed into intergranular fractures. Thus, it can be concluded from according to the results that this test method can be applicable to commercialized automotive and railroad parts that require high cycle fatigue strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.10
• /
• pp.935-941
• /
• 2006

In this paper, the dielectric and piezoelectric properties of $0.4Pb(Ni_{1/3}Nb_{2/3})O_3+0.6Pb(Zr_{405}Ti_{595})O_3+X\;wt%\;Fe_2O_3$ ceramics were investigated with the addition of $Fe_2O_3$ and sintering temperature. Dielectric constant and piezoelectric constant increased with amount of $Fe_2O_3$ to 0.25 wt% and then decreased the further addition of $Fe_2O_3$. It seems that $Fe_2O_3$ acts as a sintering aid at the sintering temperature of $1150^{\circ}C$. By the addition of $Fe_2O_3$., sintering temperature of the system was lowered from $1250^{\circ}C\;to\;1100^{\circ}C$. The piezoelectric properties showed the maximum value of ${\varepsilon}r=4669,\;d_{33}=810(10^{-12}m/V)$, kp = 77 %, Qm = 55, in $0.4Pb(Ni_{1/3}Nb_{2/3})O_3\;-0.6Pb(Zr_{0.405}Ti_{0.595})O_3+0.25wt%\;Fe_2O_3$ ceramics having composition near the morphotropic phase boundary. The composition may be appropriate for actuator materials because of high piezoelectric constant and electromechanical coupling factor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.4
• /
• pp.342-347
• /
• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).