• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.7
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• pp.783-788
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• 2011

The recent development of bio-ceramic material is being studied in various bio-material engineering field. There are lots of technical difficulties because manufacturing or bonding technique are required bio-friendliness, cleanliness and persistence. Zirconia ceramic powder is cladded on Ti-6AI-4V metallurgically by laser cladding processing. Laser cladding system with powder feeding delivery is designed and manufactured for optimum processing condition. Increasing of manufacturing speed and good quality of clad layer are achieved by application of preheating of substrate before laser cladding. The thin dilution and good clad layer on the substrate are obtained for applications of bio-materials such as the dental materials and the articulated joints of human body.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.98-106
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• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.49-55
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• 1992

We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N$_2$ mixtures, varying deposition parameters such as N$_2$ partial pressure, substrate temperature, power, and total pressure. All the samples received the heat treatment at 45$0^{\circ}C$ for 30 min. The resulting films are characterized by mechanical stylus($\alpha$-step), x-ray diffraction(XRD), scanning electron microscopy(SEM), and four point probe method. The Tin film properties strongly depend on the deposition condition. The stoichiometry and Ti deposition rate are critically affected by nitrogen partial pressure, and the resistivity, in particular, is dependent on both the substrate temperature and sputtering power.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Proceedings of the KWS Conference
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• 2004.05a
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• pp.314-315
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• 2004

As environmental issue threatens to be aggravated, applications of bio-degradable plastic (Polybutylene Succinate:PBS) tend to be increased. However, improvement of mechanical characteristics of PBS is indispensable for further widespread actual applications. Therefore, in order to produce further functional P8S with improved mechanical characteristics, TiO$_2$ coatings on PBS substrate were prepared under various spraying conditions using plasma and HVOF spraying techniques. The effects of thermal spraying methods and spraying parameters on coating properties could be confirmed. Moreover, wear behavior for TiO$_2$ coatings on PBS substrate has been also reviewed and characterized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.17-20
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• 1994

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.439-446
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• 2017

Plasma electrolyte oxidation (PEO) is a kind of anodization, in which a very high voltage or current is applied to a metal substrate in various electrolytes, allowing distinctly thick thickness of the oxide film with outstanding film properties, such as a good corrosion resistance, mechanical strength, thermal stability, and excellent adhesion to a substrate. Herein, we tried to find the optimal pretreatment conditions among commercially available solutions in order to produce PEO anodizing at relatively low voltage. We characterized the surface morphologies of the sample by scanning electron microscope (SEM), atomic force microscopy (AFM), and investigated color parameters of the pretreated surface of Ti by spectrophotometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.325-329
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• 1998

In this paper, the (Sr$_{1-x}$ Ca$_{x}$)TiO$_3$(SCT) thin films were deposited at various substrate temperature using RF magnetron sputtering method on optimized Pt-coated electrodes (Pt/TiN/SiO$_2$/Si). An influence of substrate temperature and annealing temperature on the structural and dielectric properties are investigated. The substrate temperature changed from 100[$^{\circ}C$] to 500[$^{\circ}C$] and crystalline SCT thin films were deposited abode 400[$^{\circ}C$]. All thin films had (111) preferred orientation, the (100) oriented films were obtained at the substrate temperature above 400[$^{\circ}C$]. The dielectric constant changes almost linearly in the temperature region of -80~+90[$^{\circ}C$], the temperature characteristics of the dielectric loss exhibited a stable value within 0.1, then not affected by substitutional contents. The capacitance characteristics appears a stable value within $\pm$5[%].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.753-758
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• 2003

Ti films were deposited onto 100${\times}$100 mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T～400 $^{\circ}C$, annealing temperature of 100～400 $^{\circ}C$, and sputtering gas pressure of 4${\times}$10$^{-3}$ Torr～4${\times}$10$^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties was obtained by substrate temperature of ～200 $^{\circ}C$, target-substrate distance of ～14 cm and sputtering pressure of ～1${\times}$10$^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.