• 대한전기학회논문지
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• 제43권3호
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• pp.478-484
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• 1994

Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.109-112
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• 1999

The PZT(10/90)/(90/17) heterolayered thin films were fabricated by the spin-coaling on the Pt/Ti/SiO$_2$/Si substrate using the PZT(10/90) and PZT(70/10) metal alkoxide solutions. The effect of heterolayered thin films on the ferroelectrics and electrical properties have been investigated. The lower PZT layers provided the nucleation site for the formation of a perovskite phase of the upper PZT films. Dielectric constant increased with increasing the number of coatings, and it was about 569.9 at PZT-6 heterolayered films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.118-121
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• 1999

PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.134-137
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• 2002

A new LTCC material in the $PbWO_4-TiO_2-B_2O_3-CuO$ system was developed. The developed material can be sintered at $850^{\circ}C$ and its dielectric properties are $\varepsilon_r=20-25, Q\timesf_o=30000~50000GHz$ , and $\tau_f=0.2~30ppm/^{\circ}C$, depending on the components moi ratio. Due to its low sintering temperature and microwave dielectric properties, the developed material can be used as a LTCC substrate for fabrication of multilayered microwave communication module set. In present study, using this material, tape casting condition was established. With this processing condition, a T-resonator was fabricated and its electrical properties were examined. Also, a 2-Pole band pass filter was fabricated and its frequency characteristics were compared with simulation results.

• 한국재료학회지
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• 제7권5호
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• pp.431-433
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• 1997

We investigated a double ring resonator(DRR)device to improve the resonating Q value of a superconductor resonator. To make a DRR device, we made a large area YBCO film on a MgO substrate by pulsed laser deposition(PLD). Thetransition temperature was 88 K and the film was uniformly deposited. We also deposited 500$\AA$SrTiO$_{3}$on the YBCO thin film to protect the superconducting properties from degradation. The loaded Q value was measured as 50000 from simulation and as 2000 from experiment near 10GHz at 77K.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.57-61
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• 1998

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.382-385
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• 2001

In the previous study, a new LTCC material in the PbWO$_4$-TiO$_2$-B$_2$O$_3$-CuO system was introduced. The developed material can be sintered at 850$^{\circ}C$ and its dielectric properties are $\varepsilon$$\sub$r/=20-25, Qxf$\sub$o/=30000∼500000Hz, and $\tau$$\sub$f/=0.2∼30ppm/$^{\circ}C$, respectively Therefore this material can be used as a LTCC substrate material for fabrication of multilayered high frequency communication module set. In present study, using this material, tape casting condition was established. With this condition, a multilayered resonator was fabricated and its electrical properties were examined. In present study, an antenna-duplexer module was also fabricated. Frequency characteristics of as-fabricated antenna-duplexer module was compared with simulation results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1394-1395
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• 2006

$(Na_{0.5}LaK_{0.5})NbO_3$ (NKN) thin films were fabricated by the alkoxide-based MOD method. NKN stock solutions were made spin-coated onto the Pt/Ti/$SiO_2$/Si substrate. The structural properties of the NKN thin films examined by x-ray diffraction. The perovskite phase was obtained as a function of the annealing temperature from $550^{\circ}C$ to $700^{\circ}C$ for 1h. The crystallinity and grain size of the NKN thin films increased with increasing annealing temperature. The dielectric constants and loss of the NKN thin films annealed at $650^{\circ}C$ ($t_{eq}$=2.35 nm) showed 323 and 0.025.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1529-1531
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• 2003

Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, piezocapastive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. The screen printing technique has been used to fabricate the pressure sensors on alumina substrate($Al_2O_3$). Thick film capacitive of strain sensing characteristics are reported and dielectric paste based on (Ti+Ba) materials. The electric property of dielectric paste has been studied and exhibit good properly with good gage factor comparable to piezoresistive strain gage. New piezocapacitive strain sensor was designed and tested. The output of capacitive value was good characteristics.