• Korean Journal of Materials Research
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• v.17 no.1
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• pp.6-10
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• 2007

In the present study, we investigated the formation of self-organized nanostructure oxide layers on CP Ti and Ti-10Ta-10Nb alloy in an electrolyte of 1M phosphoric acid and 1.5 wt% Hydrofluoric acid. The morphology of oxide film on substrate was observed using scanning electron microscopy and transmission electron microscopy The surface roughness of titanium oxide film was analyzed by atomic force microscopy and the crystalline of specimen was investigated using X-ray diffractometer. The results of this study showed that well-aligned titanium oxide nanotubes are formed with diameter of approx. 100nm and length of approx. 500nm with CP Ti. However, it is clear that TiTaNb alloy highly irregular structure with various diameters. Transmission electron microscope investigations show that the specimens were confirmed as amorphous. Such titanium oxide nanotubes are expected a well-adhered bioacitive surface layer on titanium substrate for orthopedics and dental implants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.424-424
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• 2008

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. Models based on a built-in electric field which sets the upper limit for the open circuit voltage(Voc) and/or the possibility of a Schottky barrier at the interface between the mesoporous wide band gap semiconductor and the transparent conducting substrate have been presented. $TiO_2$ thin films were deposited on the FTO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1 hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD) and atomic force microscope(AFM). Thickness of $TiO_2$ thin films were controlled deference deposition time and measurement by scanning electron microscope(SEM). Then we manufactured a DSC unit cells and I-V and efficiency were tested using solar simulator.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.129-133
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• 2001

In this paper, we studied structural and magnetic properties of Ba-ferrite thin film deposited on Si(100) substrate with TiO$_2$ underlayer. Ba-ferrite thin films with TiO$_2$ underlayer were deposited by reactive RF/DC magnetron sputtering system at room temperature. TiO$_2$ underlayer was reactive sputtered with $O_2$. After deposition, the thin films were annealed at vatious temperatures to get the crystallized sample. Underlayer was used to prevent interdiffusion from Ba-ferrite thin film to substrate. The growth of Ba-ferrite thin films was influenced by TiO$_2$ underlayer. Easy magnetization direction is in-plane. From these results the Ba-ferrite film with TiO$_2$ underlayer can be used as longitudinal recording media.

• Journal of Ocean Engineering and Technology
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• v.11 no.3
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• pp.56-68
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• 1997

This work was intended to study the effect of a partial pressure ratio and a total pressure of reactive gases on the properties of TiC$_{x}$N$_{1-x}$ . coated layer. In this regard, various TiC$_{x}$N$_{1-x}$ coatings were synthesized with C2112 and N2 Mixture gas of different compositions by Arc Ion Plating process which has been highlighted for an industrial purpose. It was revealed from colors and X-ray diffraction patterns that the concentration of carbon of a TiC$_{x}$N$_{1-x}$ coating increases with a partial pressure ratio (PC$_{2}$H$_{2}$/PN$_{2}$) as well as a total pressure Of $C_{2}$H$_{2}$ and N$_{2}$ mixture gas. Accordingly, the hardness of TiC$_{x}$N$_{1-x}$ coated layer increased but the adhesion to the substrate of SKH 51 was degraded. On the other hand, the deposition rate was independent of a partial pressure ratio and a total pressure of mixture gas. It was found that a uniform gas distribution is critical for an industrial application since the composition of a coating depends strongly on the location of a substrate inside of the furnace. As a result of milling tests with different TiC$_{x}$N$_{1-x}$ coated end mills, the one which has a low carbon concentration was better than others studied in this work.d in this work.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.53-66
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• 1992

Extensive research has been perform성 on the property-microstructure-process condition relations of thin films. The various proposed models are mainly based on physical vapor deposition processes. Especially the study on the surface condition of substrates in Zone 1 with low surface mobility has not been sufficient. In this study, therefore, we discussed the mochological changes of TiN films deposited by plusma enhanced chemical vapor deposition process with substrates of different composition and micro-rorghness, and compared it with the Structure Zone Model. We could find out that the growth rate of films increased and micro-grain size decreased with the increase in micro-roughness, but it does not improve the mechanical properties because of many imperfections like voids, micro-cracks, stacking faults, etc. This means that, in these deposition conditions, the increase in shadowing diffect is more effective than the increase in nucleation sites on the growth of films due to the increase in substrate roughness.

• Journal of the Korean Society for Heat Treatment
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• v.3 no.1
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• pp.17-24
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• 1990

In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.343-351
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• 1988

Planar optical waveguides are fabricated on a Y-cut LiNbO3 single crystal substrate by Ti indiffusion method. From data measured by the bright M-line spectroscopy, refractive index profiles are reconstructed by WKB approximation method. Then, single strip, X-crossing strip, and Y-brinch strip optical waveguides are fabricated on X-cut LiNbO3 single crystal substrate, with waveguide patterns made by the laser beam direct writing method. And their near-field intensity profiles are observed after coupling the light to the waveguide edges.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.