• Title/Summary/Keyword: Ti substrate

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Development of Energy Harvesting Hybrid system consisted of Electrochromic Device and Dye-Sensitized Solar Cell using Nano Particle Deposition System (나노 입자 적층 시스템(NPDS)을 이용한 염료 감응 태양전지 - 전기 변색 통합 소자 및 에너지 하베스팅 시스템에 대한 연구)

  • Kim, Kwangmin;Kim, Hyungsub;Choi, Dahyun;Lee, Minji;Park, Yunchan;Chu, Wonshik;Chun, Dooman;Lee, Caroline Sunyong
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.2
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    • pp.65-71
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    • 2016
  • In this study, Antimony Tin Oxide (ATO) ion storage layer and $TiO_2$ working electrode were fabricated using Nano Particle Deposition System. NPDS is the cutting-edge technology among the dry deposition methods. Accelerated particles are deposited on the substrate through the nozzle using NPDS. The thicknesses for coated layers were measured and layer's morphology was acquired using SEM. The fabricated electrochromic cell's transmittance was measured using UV-Visible spectrometer and power source at 630 nm. As a result, the integrated electrochromic/DSSC hybrid system was successfully fabricated as an energy harvesting system. The fabricated electrochromic cell was self-operated using DSSC as a power source. In conclusion, the electrochromic cell was operated for 500 cycles, with 49% of maximum transmittance change. Also the photovoltaic efficiency for DSSC was measured to be 2.55% while the electrochromic cell on the integrated system had resulted in 26% of maximum transmittance change.

Hybrid Fabrication of Screen-printed Pb(Zr,Ti)O3 Thick Films Using a Sol-infiltration and Photosensitive Direct-patterning Technique (졸-침투와 감광성 직접-패턴 기술을 이용하여 스크린인쇄된 Pb(Zr,Ti)O3 후막의 하이브리드 제작)

  • Lee, J.-H.;Kim, T.S.;Park, H.-H.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.4
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    • pp.83-89
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    • 2015
  • In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

Preparation of PZT Powders by Hydrothermal Synthesis : Effects of Starting Materials and the Agitation of Substrate on Powder Characteristics (수열합성법에 의한 PZT 분말제조 : 출발물질과 기질의 교반이 분말특성에 미치는 영향)

  • Jung, S.T.;Lee, K.J.;Seo, K.W.
    • Applied Chemistry for Engineering
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    • v.8 no.2
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    • pp.292-300
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    • 1997
  • In this study PZT powders were prepared with shapes of cubic by hydrothermal synthesis with various starting materials, and the sintering characteristics of the powders were investigated. The particle shapes were cubic regardless of starting materials, but the mean size of particles formed using $Pb(NO_3)_2$, $Ti(OC_4H_9)_4$ and $Zr(OC_4H_9)_4$ was relatively smaller than that of particles prepared from other starting materials. Agitation of the feedstock during hydrothermal reaction results in decreasing the required reaction temperature for the formation of nuclei, and in increasing the size of product particles. XRD results showed that the major phase of PZT crystal powders was a tetragonal phase at the Zr to Ti ratio of 40 to 60, or a rhombohedral phase at its ratio of 60 to 40. The density of a sintered body made from the hydrothermal powders in PbO surrounding varied with sintering temperatures and with periods of sintering time. The experimental results also showed that the optimum sintering condition was at $1150^{\circ}C$ for a 2hr sintering, and that the density of a sintered body was $7.6g/cm^3$.

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Fabrication and Analysis of Thin Film Supercapacitor using a Cobalt Oxide Thin Film Electrode (코발트 산화물 박막을 이용한 박막형 슈퍼 캐패시터의 제작 및 특성평가)

  • Kim, Han-Gi;Im, Jae-Hong;Jeon, Eun-Jeong;Seong, Tae-Yeon;Jo, Won-Il;Yun, Yeong-Su
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.339-344
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    • 2001
  • An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.

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A Study on Intermediate Layer for Palladium-Based Alloy Composite Membrane Fabrication (팔라듐 합금 복합막 제조를 위한 Intermediate Layer 연구)

  • Hwang, Yong-Mook;Kim, Kwang-Je;So, Won-Wook;Moon, Sang-Jin;Lee, Kwan-Young
    • Applied Chemistry for Engineering
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    • v.17 no.5
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    • pp.458-464
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    • 2006
  • The Pd-Ni-Ag alloy composite membrane using modified porous stainless steel (PSS) as a substrate was prepared by a electroless plating technique. In this work, we have introduced the intermediate layer between Pd-based alloy and a metal substrate. As an intermediate layer, the mixtures of nickel powder and inorganic sol such as $SiO_{2}$ sol, $Al_{2}O_{3}$ sol, and $TiO_{2}$ sol were used. The intermediate layers were coated onto a PSS substrate according to various membrane preparation conditions and then $N_{2}$ fluxes through the membranes with different intermediate layers were measured. The surface morphology of the intermediate layer in the mixture of nickel powder and inorganic sol was analyzed using scanning electron microscope (SEM). Finally, the Pd-Ni-Ag alloy composite membrane using the support coated with the mixture of nickel powder and silica as an intermediate layer was fabricated and then the gas permeances for $H_{2}$ and $N_{2}$ through the Pd-based membrane were investigated. The selectivity of $H_2/N_2$ was infinite and the $H_{2}$ flux was $1.39{\times}10^{-2}mol/m^2{\cdot}s$ at the temperature of $500^{\circ}C$ and trans-membrane pressure difference of 1 bar.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Properties of Yttrium Manganates with MFS Structure Fabricated on Various Substates (MFS 구조로 적층된 Yttrium Manganates의 기판 변화에 따른 특성 연구)

  • 강승구
    • Journal of the Korean Ceramic Society
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    • v.40 no.2
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    • pp.206-211
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    • 2003
  • Effects of substrates and buffer layer upon the formation of crystalline phases and ferroelectricity of $YMnO_3$ thin films were investigated. The hexagonal $YMnO_3$ was easily formed on Si(100) while the mixed phases, hexagonal and orthorhombic $YMnO_3$, on $Pt(111)/TiO_2/SiO_2/Si$ substrate. When the $Y_2O_3$ buffer layer of 70 nm thick was inserted between the substrates and the $YMnO_3,$ the c-axis oriented hexagonal single phase formed on both substrates, Si(100) and $Pt(111)/TiO_2/SiO_2/Si$. The leakage current density of the hexagonal $YMnO_3$ thin films was lower than that consisting of mixed phases, hexagonal and orthorhombic. Furthermore the hexagonal $YMnO_3$ with c-axis preferred orientation showed the lowest leakage current density. The remnant polarization from a P-E hysteresis curve for the $YMnO_3$ formed on Si(100) was 0.14 without buffer layer and $0.24_{mu}C/cm^2$ for that with buffer layer. For the $Pt(111)/TiO_3/SiO_3/Si$ substrates, the specimen without $Y_2O_3$buffer layer did not show the hysteresis curve, while the buffer-layered has the remnant polarization of $1.14_{mu}C/cm^2$. It was concluded that the leakage current density and the ferroelectricity for the $YMnO_3$ thin films could be controlled by varying crystalline phases and their preferred orientation which depend on the kind of substrates and whether the $Y_2O_3$buffer layer exist or not.

The Characteristics of Titanium Oxide Films Deposited by the Nozzle-type HCP RT-MOCVD (노즐 형태 HCP RT-MOCVD에 의해 증착된 티타늄 산화막 특성)

  • Jung, Il-hyun
    • Applied Chemistry for Engineering
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    • v.17 no.2
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    • pp.194-200
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    • 2006
  • Titanium oxide films were deposited by the nozzle type HCP RT-MOCVD for the application of metal-oxide films. In the case of TTNB, after depositing films, films must be annealed at a proper temperature, but in the case of titanium ethoxide, titanium oxide films could be directly deposited by titanium ethoxide without general annealing. We could confirm that ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt, distance between cathode and substrate of 3 cm, deposition time of 20 min, and ratio of Ar to $O_2$ of 1 : 1. Therefore, we could obtain the titanium oxide film deposited by the nozzle type HCP RT-MOCVD without an annealing process and could apply in the metal-oxide deposition process at a low temperature.

Fabrication and Characterization of Dielectric Materials of Front and Back Panel for PDP

  • Chang, Myeong-Soo;Pae, Bom-Jin;Lee, Yoon-Kwan;Ryu, Byung-Gil;Park, Myung-Ho
    • Journal of Information Display
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    • v.2 no.3
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    • pp.39-43
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    • 2001
  • The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

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Wear characteristics of boron nitride thin film for durability improvement of ultra- precision component (초정밀 부품의 내구성 향상을 위한 질화붕소 박막의 마멸 특성에 관한 연구)

  • Ku, Kyoung-Jin;Hwang, Byoung-Har;Lin, Li-Yu;Kim, Dae-Eun;Baik, Hong-Koo
    • Transactions of the Society of Information Storage Systems
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    • v.3 no.3
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    • pp.129-134
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    • 2007
  • Boron nitride (BN) is a highly attractive material for wear resistant applications of mechanical components. BN is super hard and it is the second hardest of all known materials. It also has a high thermal stability, high abrasive wear resistance, and in contrast to diamond, BN does not react with ferrous materials. The motivation of this work is to investigate the tribological properties of BN for potential applications in ultra-precision components for data storage, printing, and other precision devices. In this work, the wear characteristics of BN thin films deposited on DLC or Ti buffer layer with silicon substrate using RF-magnetron sputtering technique were analyzed. Wear tests were conducted by using a pin-on-disk type tester and the wear tracks were measured with a surface profiler. Experimental results showed that wear characteristics were dependent on the sputtering conditions and buffer layer. Particularly, BN coated on DLC layer showed better wear resistant behavior. The range of the wear rates for the BN films tested in this work was about 20 to $100{\mu}m^3$/cycle.

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