• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.435-436
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• 2008

Dye-sensitized Solar Cells(DSSCs) which convert incident sun light into electricity were expected to overcome global warming and depletion of fossil fuels. And it is one of study that is lately getting into the spotlight because manufacturing method is more simple and inexpensive than existing silicon solar cells. In this respect, DSSCs are in the limelight as the next generation solar cells. DSSCs are generally composed of a dye-modified $TiO_2$ photoelectrode, a Pt counter electrode, and an electrolytes containing a redox couple$(I^-/I_3^-)$. Among these elements, pt electrode were prepared by applying electric potential to FTO substrate in the $H_2PtCl_6$ solution. In this study, we report the solar cell efficiency depending on $PtCl_4$ concentration change. $PtCl_4$ concentration was 1mM, 5mM, 10mM, and 20mM, and adhered on FTO glass substrate by sintering process. When applied each $PtCl_4$ counter electrode on DSSC, the best efficiency was found at 10mM of $PtCl_4$ concentration. The catalyst promotes the movement of electron from the counter electrode to the electrolyte the higher the molarity, the better the efficiency. However, in case of 20mM, it is estimated that over-deposited $PtCl_4$ tends to restrict the movement of electron due to its bundle formation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.79-79
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• 2008

We report the growth of $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin films and their substrate-dependent electrical characteristics. BST thin films were deposited on alumina(non-single crystal), $Al_2O_3$(100) substrates by Nd:YAG Pulsed Laser Deposition(PLD) with a 355nm wavelength at substrate temperature of $700^{\circ}C$ and post-deposition annealing at $750^{\circ}C$ in flowing $O_2$ atmosphere for 1hours. BST materials had been chosen due to high dielectric permittivity and tunability for high frequency applications, To analyze the oxygen partial pressure effects, deposited films at 1, 10, 50, 100, 150, 200, 300 mTorr. The effects of oxygen pressure on structural properties of the deposited films have been investigated by X-ray diffraction(XRD) and atomic force microscope(AFM), respectively. Then we manufactured a inter-digital capacitor(IDC) patterns twenty fingers and $10{\mu}m$ gap, $700{\mu}m$ length and electrical properties were characterized. The results provide a basis for understanding the growth mechanisms and basic structural and electrical properties of BST thin films as required for tunable microwave devices applications such as varactors and tunable filters.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Progress in Superconductivity
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• v.8 no.1
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• pp.75-80
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• 2006

[ $Yb_2O_3$ ] films were successfully deposited on a cube-textured Ni and(100) $SrTiO_3$(STO) single crystal substrates by metal organic chemical vapor deposition(MOCVD) method using $H_2O$ vapor as an oxidant. $H_2O$ vapor was used in order to avoid the oxidation of Ni substrate. The working pressure and Ar flow rate were 10 Ton and 600 sccm, respectively. $Yb_2O_3$ films on STO were formed at high temperatures above $900^{\circ}C$. While XRD peaks from $Yb_2O_3$ were hardly detected at $900^{\circ}C$, the $Yb_2O_3$(400) texture was developed fur the films grown at deposition temperatures above $950^{\circ}C$. The AEM surface roughness of $Yb_2O_3$ film, grown on STO, was in the range of $6{\sim}10nm$ for the film deposited at $950^{\circ}C$ with a $H_2O$ vapor partial pressure of 5.5 Ton and deposition times of 3 and 5 mins. For cube-textured Ni substrate, both $Yb_2O_3$(222) and $Yb_2O_3$ (400) textures were developed textures at deposition temperatures above $850^{\circ}C$.

• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.166-171
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• 2006

In this study, in using a piezoelectric material of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ (PMN-PT), which has a high electromechanical coupling coefficient, we have tried to study about this material can be practically available as a new biosensor to detect protein by using surface acoustic wave (SAW). As the results, the filtering of the center frequency of the PMN-PT substrate is a superior result to that of the $LiTaO_3$ (LT) substrate, but the result was not completely satisfactory. Also this study attempts to develop a sensing method to detect mismatched DNA in order to diagnose cancer. We could directly immobilize the MutS to the NTA using the EDC solution. But, we immobilized MutS using nickel and it is judged that is more effective method to detect mismatched DNA.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Journal of the Korean institute of surface engineering
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• v.41 no.3
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• pp.88-93
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• 2008

Ir-Re thin films with Ti interlayer were deposited onto the tungsten carbide substrate by ion beam assisted DC magnetron sputtering. The Ir-Re films were prepared with targets of having two atomic percent of 7:3 and 5:5. The microstructure and surface analysis of the specimen were conducted by using SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Ir-Re thin film also were examined. The interlayer of pure titanium was formed with 100 nm thickness. The film growth of Ir-30at.%Re was faster than that of Ir-50at.%Re in the same deposition conditions. Ir-Re thin films consisted of dense and columnar structure irrespective of the different target compositions. The values of hardness and adhesion strength of Ir-30at.%Re thin film coated on WC substrate were higher than those of Ir-50at.%Re thin film.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.65-71
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• 2016

In this study, Antimony Tin Oxide (ATO) ion storage layer and $TiO_2$ working electrode were fabricated using Nano Particle Deposition System. NPDS is the cutting-edge technology among the dry deposition methods. Accelerated particles are deposited on the substrate through the nozzle using NPDS. The thicknesses for coated layers were measured and layer's morphology was acquired using SEM. The fabricated electrochromic cell's transmittance was measured using UV-Visible spectrometer and power source at 630 nm. As a result, the integrated electrochromic/DSSC hybrid system was successfully fabricated as an energy harvesting system. The fabricated electrochromic cell was self-operated using DSSC as a power source. In conclusion, the electrochromic cell was operated for 500 cycles, with 49% of maximum transmittance change. Also the photovoltaic efficiency for DSSC was measured to be 2.55% while the electrochromic cell on the integrated system had resulted in 26% of maximum transmittance change.