• Korean Journal of Materials Research
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• v.21 no.4
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• pp.236-241
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• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.244-250
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• 1999

MOCVD TiN films were prepared from a new TiN precursor, tetrakis(etylmethylamino)titanium (TEMAT) and ammonia. Deposition of TiN films from a single precursor, TEMA T yielded the growth rates of $70 to 1050\AA$/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over $0.35\mu\textrm{m}$ contacts was obtained at $275^{\circ}C$. The addition of ammonia to TEMA T lowered the resistivity of as- deposited TiN film to ~ $800\mu\omega-cm$ from $3500~6000\mu\omega-cm$ and improved the stability of TiN film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of TiN films over $0.5\mu\textrm{m}$ contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMA T and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transammination reaction was proposed to be responsible for TiN deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMA T and ammonia was metallic carbon, suggesting that $\beta$-hydrogen activation process occurs competitively with the transammination reaction.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.440-441
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• 2006

Several titanate powders ($Al_2TiO_5,\;SrTiO_3$, etc.) were synthesized by an ethylene glycol solution route. Titanium isopropoxide and nitrate salts were dissolved in stoichiometric proportions in liquid-type ethylene glycol without any precipitation. The parent precursor sols were dried to porous gels, and then the gels were calcined and crystallized. All synthesized titanate powders had stable crystallization behavior at low temperature and high specific surface area after a simple ball-milling process. A three-component PZT $(Pb(Zr_{0.52}{\cdot}Ti_{0.48})O_3)$ powder was also synthesized successfully by the ethylene glycol method. In this study, the characteristics of the multi-component titanate powders by the ethylene glycol method are examined.

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1273-1279
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• 2008

This study examined the catalytic destruction of 1,2-dichlorobenzene on ${V_2}{O_5}/TiO_2$ nanoparticles. The ${V_2}{O_5}/TiO_2$ nanoparticles were synthesized by the thermal decomposition of vanadium oxytripropoxide and titanium. The effects of the synthesis conditions, such as the synthesis temperature and precursor heating temperature, were investigated. The specific surface areas of ${V_2}{O_5}/TiO_2$ nanoparticles increased with increasing synthesis temperature and decreasing precursor heating temperature. In addition, the removal efficiency of 1,2-dichlorobenzene was promoted by a decrease in heating temperature. However, the removal efficiency of 1,2-dichlorobenzene was decreased by an anatase to rutile phase transformation at temperatures $1,300^{\circ}C$.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.583-591
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• 2008

In this study, two series of CNT/$TiO_2$ electrodes were prepared. The decrease of surface area compared with that of the pristine carbon nanotubes (CNTs) indicated the blocking of micropores on the surface of the CNTs; was further supported by scanning electron microscopy (SEM) and field emission SEM (FE-SEM) observations. The X-ray diffraction (XRD) results showed that the CNT/$TiO_2$ composites contained a mix of anatase and rutile forms of $TiO_2$ particles when the precursor was $TiO_2$ powder, whereas when the precursor was Ti ($OC_4H_7$) (TNB), the composites contained only the typical single and clear anatase $TiO_2$ particles. The energy dispersive X-ray spectroscopy (EDX) spectra showed the presence of C, O and Ti peaks for all samples. It was found that catalytic decomposition of methylene blue (MB) solution could be attributed to synthetic effects between the $TiO_2$ photocatalysis and electro-assisted CNTs network, and that photoelectrocatalytic oxidation increased with an increase of CNT composition. It was also found that the photoelectrocatalytic oxidation efficiency for MB is higher than that of photocatalytic oxidation. Moreover, the CNT/$TiO_2$ composites catalyst prepared by the impregnation method demonstrates higher photoelectrocatalytic activity than the mechanical mixture with the same CNT content.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.28-33
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• 1995

TiN 박막은 저온(<$500^{\circ}C$), 저압(1Torr)에서 Tetrakis(diethylamido)titanium[TDEAT, Ti(NEt2)4]single precursor를 사용하여 증착하였다. 증차고딘 박막은 SEM(Scanning Electron Microscopy)으로 surface morphology와 step coverage를 측정하였고, TEM(Transmission Electron Microscopy)분석결과 microcrystalline의 TiN을 확인하였다. XPS(X-ray Photoelectron Spectroscopy)분석결과에 따르면 $200-500^{\circ}C$구간에서는 $\beta$-hydogen elimination에 의한 반응이 일어나고 $600-700^{\circ}C$구간에서는 thermal decomposition에 의한 반응이 일어나고 있음을 알 수 있다. Carbon과 oxygen의 농도는 AES(Auger Electron Spectroscopy)를 사용하여 측정하였으며 온도가 감소할수록 carbon의 농도가 감소하는 경향을 보여주고 있다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.65-65
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• 2005

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1196-1204
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• 1999

We have carried out copper MOCVD(metalorganic chemical vapor deposition) onto the reactive sputtered PVD-TiN and rapid thermal converted RTP-TiN substrates using direct liquid injection for effective delivery of the (hfac)Cu(vtmos) [$C_{10}H_{13}O_{5}CuF_{6}$Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] precursor. Especially, the influences of deposition conditions and the substrate type on growth rate, crystal structure, microstructure, and electrical resistivity of copper deposits have been discussed. It is found that the film growth with 0.2ccm precursor flow rate become mass-transfer controlled up to Ar flow rate of 200sccm and pick-up rate controlled at a vaporizer above 1.0Torr reactor pressure. The surface-reaction controlled region from 155 to 225$^{\circ}C$ at 0.6Torr reactor pressure results in the apparent activation energies of 12.7~14.1kcal/mol, and above 224$^{\circ}C$ the growth rate with $H_2$ addition could be improved compared to the pure Ar carrier. The Cu/RTP-TiN structures which have high copper nucleation density in initial stage of growth show more pronounced (111) preferred orientations and lower electrical resistivities than those on PVD-TiN. The variation of electrical resistivity with substrate temperature reflects the three types of film microstructure changes, showing the lowest value for the deposit at 165$^{\circ}C$ with small grains of good contacts.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2006.04a
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• pp.352-353
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• 2006

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.77.1-77
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• 2003