• 제목/요약/키워드: Ti precursor

검색결과 293건 처리시간 0.034초

화학기상응축 공정에서 TiO2나노입자 특성에 미치는 반응온도와 전구체 농도의 영향 -Part II 분말형성에 대한 반응인자적 분석 (Effects of Temperature and Precursor-concentration on Characteristics of TiO2 Nanoparticles in Chemical Vapor Condensation Process -Part II: Analysis of Particle Formation Estimated by Reaction Factors)

  • 이창우;유지훈;임성순;윤성희;이재성;좌용호
    • 한국재료학회지
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    • 제13권5호
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    • pp.328-332
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    • 2003
  • Characteristics of $TiO_2$nanoparticles controlled by precursor flow rate and reaction temperature in chemical vapor condensation process were interpreted in the view of decisive reaction factors, i.e. supersaturation ratio, concentration of vapor molecule, collision frequency and rate, and residence time, which directly affect the particle size and size distribution in CVC reactor. As results, the increases of precursor flow rate and reaction temperature induced the increase in the average sizes of $TiO_2$ nanoparticles in CVC reactor by acceleration of coagulation growth due to the increase of collision between $TiO_2$vapor molecules and particles. The effects of reaction factors on the characteristics of$TiO_2$nanoparticles were discussed with considering particle formation process in CVC reactor under given process parameters.

나노 실리카의 분무건조를 이용한 중공구 입자 제조와 실리카중공구의 열전달 특성 (Preparation of Hollow Silica by Spray Drying of Nano Silica Particles and Its Heat Transfer Property)

  • 윤찬기;임형미;차수진;김대성;이승호
    • 한국재료학회지
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    • 제22권10호
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    • pp.531-538
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    • 2012
  • Hollow silica spheres were prepared by spray drying of precursor solution of colloidal silica. The precursor solution is composed of 10-20 nm colloidal silica dispersed in a water or ethanol-water mixture solvent with additives of tris hydroxymethyl aminomethane. The effect of pH and concentrations of the precursor and additives on the formation of hollow sphere particles was studied. The spray drying process parameters of the precursor feeding rate, inlet temperature, and gas flow rate are controlled to produce the hollow spherical silica. The mixed solvent of ethanol and water was preferred because it improved the hollowness of the spheres better than plain water did. It was possible to obtain hollow silica from high concentration of 14.3 wt% silica precursor with pH 3. The thermal conductivity and total solar reflectivity of the hollow silica sample was measured and compared with those values of other commercial insulating fillers of glass beads and $TiO_2$ for applications of insulating paint, in which the glass beads are representative of the low thermal conductive fillers and the $TiO_2$ is representative of infrared reflective fillers. The thermal conductivity of hollow silica was comparable to that of the glass beads and the total solar reflectivity was higher than that of $TiO_2$.

Fe-ACF/$TiO_2$ 복합체에 의한 로다민 B 용액의 분해에 있어서 pH 의존성 및 여러 가지 Fe 전구체의 효과 (pH Dependence on the Degradation of Rhodamine B by Fe-ACF/$TiO_2$ Composites and Effect of Different Fe Precursors)

  • 장간;오원춘
    • Elastomers and Composites
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    • 제44권4호
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    • pp.408-415
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    • 2009
  • 졸-겔 방법을 사용하여 Fe-ACF/$TiO_2$ 복합체 광촉매를 제조하였다. 여러 가지 철 전구체를 사용하여 세가지 Fe-ACF/$TiO_2$ 복합체를 제조하고 BET, SEM, XRD 및 EDX를 사용하여 특성화 하였다. UV 조사에서 Rh.B 용액의 분해에 의거하여 Fe-ACF/$TiO_2$ 복합체의 광촉매 특성을 파악 하였다. 실험 결과로부터, Fe-ACF/$TiO_2$ 복합체는 ACF/$TiO_2$ 복합체 보다 Rh.B의 제거 효과가 더 우수함을 나타내었다. 또한 여러 가지 Fe 전구체 사용으로 인한 Fe 원소의 포토-펜톤 효과는 다르게 나타났다. $FeCl_3$을 사용하여 제조된 Fe-ACF/$TiO_2$ 복합체는 가장 우수한 포토-펜톤 효과를 나타내었고, pH 변화에 의존하여 Rh.B 용액 분해에 대하여 영향을 주었다.

Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors and Their Micro-patterning by using SAM

  • Suzuki, Hisao
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.907-912
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    • 2005
  • Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

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도판트 프리커서의 용해도 차이에 의한 Cr-doped Li4Ti5O12의 전기화학적 특성 변화 (Electrochemical Characteristic Change of Cr-doped Li4Ti5O12 due to Different Water Solubility of Dopant Precursors)

  • 윤수원;송한나;김용태
    • 전기화학회지
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    • 제18권1호
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    • pp.17-23
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    • 2015
  • $Li_4Ti_5O_{12}$는 우수한 안정성으로 자동차용 리튬 이온 이차전지의 음극 활물질로서 각광 받고 있다. 그러나 넓은 밴드갭에 기인한 절연체 특성으로 고율 충/방전을 가능하게 하기 위해서는 전자 전도도의 개선이 필수적이다. 본 연구에서는 Cr 도핑을 통해 $Li_4Ti_5O_{12}$의 전자 전도도 개선을 목표로 하였으며, wet-mixing법을 통한 물질 합성시 도판트인 Cr 프리커서의 용해도 차이에 의한 Cr-doped $Li_4Ti_5O_{12}$의 전기화학적 특성 변화를 고찰하고자 하였다. 시료의 물리적 특성은 ICP, XRD, SEM, EXAFS을 통하여 확인하였고 1.0V~3.0V (vs. $Li/Li^+$) 하에서 충/방전 특성을 조사하였다. 프리커서의 용해도는 합성된 물질의 상(phase) 및 모폴로지에 큰 영향을 미쳤으며, 가장 용해도가 높은 $Cr(NO_3)_2$ 프리커서로부터 합성된 경우 Bare $Li_4Ti_5O_{12}$와 비교하여 약 2배 개선된 고율 충/방전 특성(130 mAh/g @ 10 C)을 확인하였다.

리튬이차전지용 음극물질로서 Ti-precursor를 이용하여 $Li_4Ti_5O_{12}$ 합성 및 전지특성

  • Kwon, Yong-Jin;Ji, Mi-Jung;Lee, Dae-Jin;Lee, Mi-Jae;Choi, Byung-Hyun;Kim, Young-Jun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.262-262
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    • 2009
  • 최근 리튬이차전지가 전지자동차, hybrid car, PHEV, Ev, UPS 저장장치로 사용되기 시작함에 따라 고용량화, 고출력화가 요구되고 있다. 현재까지 주로 사용 되어왔던 carbon으로는 작동전압이 낮고, 고용량화, 고출력화가 어려워 금속산화물, 금속 비정질 금속 및 금속산화물을 carbon과 혼합 사용 함으로써 차세대 전지로서 특성을 달성하고 있다. 따라서 본 연구에서는 음극 소재로서 안정성이 뛰어난 금속산화물로 $Li_4Ti_5O_{12}$를 합성할 때 저가의 $TiCl_4$를 이용 $Li_4Ti_5O_{12}$가 고밀도를 갖게끔 $TiCl_4$를 이용 구형의 Ti-precursor(전구체)를 합성한 후 구형의 $Li_4Ti_5O_{12}$를 합성하였다. Ti전구체는 $TiCl_4$로부터 합성하였는데 이때 구형을 제조하고자 Hydroxypropyl cellulose(이하 HPC)를 사용하여 반응을 진행하였다. 이때 반응 조건 및 HPC의 몰수 변화에 따른 입자 형상의 변화에 관하여 관찰한 결과, $TiOCl_2$ 0.4mol, 반응온도 $10^{\circ}C$, 유지시간 6시간, HPC양 0.02mol일 때 $0.6{\mu}m$ 정도의 구형 Ti-전구체를 합성하였다. 합성된 Ti-전구체와 리튬수화물을 사용하여 $Li_4Ti_5O_{12}$를 합성 하였고, 상기 물질로 전지특성을 평가하였다.

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고순도 TiCl4 제조 및 이를 활용한 고순도 Ti 분말 제조 공정 연구 (Study on Manufacture of High Purity TiCl4 and Synthesis of High Purity Ti Powders)

  • 이지은;윤진호;이찬기
    • 한국분말재료학회지
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    • 제26권4호
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    • pp.282-289
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    • 2019
  • Ti has received considerable attention for aerospace, vehicle, and semiconductor industry applications because of its acid-resistant nature, low density, and high mechanical strength. A common precursor used for preparing Ti materials is $TiCl_4$. To prepare high-purity $TiCl_4$, a process based on the removal of $VOCl_3$ has been widely applied. However, $VOCl_3$ removal by distillation and condensation is difficult because of the similar physical properties of $TiCl_4$ and $VOCl_3$. To circumvent this problem, in this study, we have developed a process for $VOCl_3$ removal using Cu powder and mineral oil as purifying agents. The effects of reaction time and temperature, and ratio of purifying agents on the $VOCl_3$ removal efficiency are investigated by chemical and structural measurements. Clear $TiCl_4$ is obtained after the removal of $VOCl_3$. Notably, complete removal of $VOCl_3$ is achieved with 2.0 wt% of mineral oil. Moreover, the refined $TiCl_4$ is used as a precursor for the synthesis of Ti powder. Ti powder is fabricated by a thermal reduction process at $1,100^{\circ}C$ using an $H_2-Ar$ gas mixture. The average size of the Ti powder particles is in the range of $1-3{\mu}m$.

Solution 코팅에 따른 Pb(Zr,Ti)$O_3$ 후막의 강유전 특성 (Ferroelectric Properties of Pb(Zr,Ti)$O_3$ Thick Films with Solution Coatings)

  • 박상만;이성갑;노현지;이영희;배선기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.35-36
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    • 2006
  • The influence of the concentration of precursor solution and the number of solution coatings on the densification of the Pb($Zr_xTi_{1-x}$)$O_3$(PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were PZT(70/30) and PZT(30/70), respectively. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 15M, 6-time coated showed the 698. The remanent polarization of the 1.5M, 6-time coated PZT thick films was 38.3 ${\mu}C/cm^2$.

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