• 제목/요약/키워드: Ti hydrate

검색결과 14건 처리시간 0.026초

Hydrate Salt법을 이용한 Nano BaTiO3 저온합성 메커니즘 (The Synthesis Mechanism of BaTiO3 Nano Particle at Low Temperature by Hydrate Salt Method)

  • 이창현;신효순;여동훈;하국현;남산
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.852-856
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    • 2014
  • $BaTiO_3$ nano powder can be synthesized by hydrate salt method at $120^{\circ}C$ in air. Decreasing the thickness of thick film, the nano dielectric particle is needed in electronic ceramics. However, the synthesis of $BaTiO_3$ nano particle at low temperature in air and their mechanism were not reported enough. And ultrasonic treatment can be tried because of low temperature process in air. Therefore, in this study, the $BaTiO_3$ nano powder was synthesised with the synthesis time and ultrasonic treatment at $120^{\circ}C$ in air. In the synthesis process, the effects of process were evaluated. From the experimental observation, the synthesis mechanism was proposed. The homogeneous $BaTiO_3$ particle was synthesised by KOH salt solution at $120^{\circ}C$ for 1hour. It was conformed that the ultrasonic treatment effected on the increase of synthesis rate. After cutting the salt powder using FIB, $BaTiO_3$ nano particles observed homogeneously in the cross-section of the salt particle.

PHOTOCATALYTIC ACTIVITY OF ARTIFICIAL TITANIUM(IV) OXIDE-$TIO_2(B)$-AND TITANATES SUSPENDED IN AQUEOUS SOLUTION OF ALIPHATIC ALCOHOLS

  • Bunsho Ohtani;Koujiro Tennou;Nishmoto, Sei-ichi;Tomoyuki Inui
    • Journal of Photoscience
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    • 제2권1호
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    • pp.7-11
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    • 1995
  • Powders of artificial crystallites of titanium(IV) oxide, TiO$_2$(B), were synthesized by the calcination of tetratitanic acid (hydrate, $H_2Ti_4O_9H_2O$; TTA). The relating titanates, potassium octatitanate ($K_2Ti_8O_{17}$) and octatitanic acid($H_2Ti_8O_{17}$), were also prepared. These powders, loaded with small amount of Pt, were suspended in an aqueous solution of 2-propanol and irradiated under argon atmosphere at 298 K + 0.5 deg. All the photocatalysts tested in this study produced almost equimolar amount of acetone and molecular hydrogen (H$_2$). Among them TiO$_2$(B) and TYA showed the higher photocatalytic activity but rather lower than commercial titanium(IV) oxide (TiO$_2$) powders. The photocatalytic activity of TiO$_2$(B) for 2-propanol dehydrogenation in deaerated aqueous suspension increased with the elevating calcination temperature. Comparison of rate of H$_2$ formation from methanol and 2-propanol solutions by the TiO$_2$(B) photocatalyst suggested a possibility of selection of substrate with its molecular size by TiO$_2$(B)

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탄화수소계 가스센서를 위한 SnO2-TiO2계 후막의 제조 (Fabrication of SnO2-TiO2-based Thick Films for Hydrocarbon Gas Sensors)

  • 정완영;박정은;강봉휘;이덕동
    • 한국세라믹학회지
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    • 제28권9호
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    • pp.721-729
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    • 1991
  • SnO2-TiO2(Pt or Pd), as raw material for hydrocarbon gas sensors, was prepared by a coprecipitation method. The SnO2-TiO2-based thick film gas sensors were made by screen printing technique. The titanium dioxide synthesized was shown to be anatase structure from XRD peaks and was transformed to rutile structure between 700$^{\circ}C$ and 1000$^{\circ}C$. Titanium dioxide in SnO2-TiO2 thick films devices plays a very important role in the enhancement of the sensitivity to CH4 and C4H10. In the case of SnO2-TiO2(Pt) sensors, titanium dioxide that was rutile structure enhanced the sensitivity of the thick film to CH4. Platinum added to the raw powder at coprecipitation (as chloroplatinic acid VI hydrate) improved the gas sensitivity to hydrocarbon gases. Therefore, it is expected that the SnO2-TiO2(Pt) thick film sensors fabricated in this experiment could be put into practical use as LPG (primary component : C4H10 and C3H8) and LNG (primary component : CH4) sensors.

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고순도.미립 $TiO_2$분말 제조에 관한 연구 -가수분해 반응 조건에 따른 분말특성(II)- (Studies on Preparation of $TiO_2$Powder with High Purity and Fine Particle -Properies of Powder with Reaction Condition of Hydrolysis(II)-)

  • 최병현;허혜경;이미재;김환;김무경
    • 한국세라믹학회지
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    • 제37권10호
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    • pp.938-943
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    • 2000
  • TiCl$_4$, 물 및 1-propanol의 혼합용액으로부터 미립 TiO$_2$분말 제조시, 1-propanol과 물의 부피비, 반응온도, 반응유지시간 및 TiCl$_4$mole 농도에 따른 분말 특성 및 결정상 생성에 대해 조사하였다. 반응온도가 3$0^{\circ}C$ 이상일 때 Ti 수화물의 초기 침전이 생성되었고 반응온도가 TiCl$_4$mole 농도가 증가함에 따라 입자크기는 증가하였고 $600^{\circ}C$ 하소시 1-propanol과 물의 부피비가 2보다 크고 반응온도가 7$0^{\circ}C$보다 낮을 때 주결정상은 anatase였다. 입자크기가 미세하고 입자크기 분포가 좁은 범위를 갖는 조건은 1-propanol과 물의 부피비가 2, 반응온도가 7$0^{\circ}C$, TiCl$_4$mole 농도가 0.2 mole/ι일 때였으며, 결정상의 생성은 1-propanol과 물의 부피비가 2, 반응온도가 3$0^{\circ}C$ 이상일 때 anatase에서 rutile로 전이하는 온도가 높아졌다. 이와 같은 반응인자에 따른 효과는 용매의 유전상수, 티타니아의 용해도, 입자의 표면전위 등의 효과와 관계가 있었다.

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용액 방법을 사용한 TIZO 박막 트랜지스터 제작 및 전기적 특성 조사

  • 서가;정호용;이세한;김태환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.400-400
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    • 2012
  • 산화물 반도체는 넓은 에너지갭을 가지고 높은 이동성과 높은 투명성을 가지기 때문에 초고 속 박막 트랜지스터(Thin film transistor; TFT)에 많이 응용되고 있다. 그러나 ZnO 및 $In_2O_3$ 산화물 반도체를 박막트랜지스터에 사용할 경우 소자가 불안정하여 전기적 성질이 저하되고 문턱전압의 이동이 일어난다. TFT에 사용되는 산화물 반도체로는 GaInZnO, ZrInZnO, HfInZnO 및 GaSnZnO의 전기적 특성에 관한 연구가 많이 되었다. 그러나 titanium-indium-zinc-oxide (TIZO) TFT에 대한 연구는 비교적 적게 수행 되었다. 본 연구에서는 TFTs의 안정성을 향상하기 위하여 TFT의 채널로 사용되는 TiInZnO를 형성하는데 간단한 제조 공정과 낮은 비용의 용액 증착방법을 사용하였다. 졸-겔 전해액은 Titanium (IV) isopropoxide $[Ti(OCH(CH_3)_2)_4]$, 0.1 M Zinc acetate dihydrate $[Zn(CH_3COO)_2{\cdot}2H_2O]$ 그리고 indium nitrate hydrate $[In(NO_3)_3{\cdot}xH_2O]$을 2-methoxyethanol의 용액에 합성하였다. $70^{\circ}C$에서 한 시간 동안 혼합 하였다. Ti의 몰 비율은 10%, 20% 및 40% 로 각각 달리하여 제작하였다. $SiO_2$층 위에 2,500 rpm 속도로 25초 동안 스핀 코팅하여 TFT를 제작하였다. TIZO 박막에 대한 X-선 광전자 스펙트럼 관측 결과는 Ti 몰 비율이 증가함에 따라 Ti 2p1/2피크의 세기가 증가함을 보여주었다. TiZO 박막에 Ti 원자를 첨가하면 $O^{2-}$ 이온이 감소하기 때문에 전하의 농도가 변화하였다. 전하 농도의 변화는 TiZO 채널을 사용하여 제작한 TFT의 문턱전압을 양 방향으로 이동 하였으며 off-전류를 감소하였다. TiZO 채널을 사용하여 제작한 TFT의 드레인 전류-게이트 전압 특성은 on/off비율이 $0.21{\times}107$ 만큼 크며 이것은 TFT 소자로서 우수한 성능을 보여주고 있다.

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전해질 농도가 양극산화와 열수처리한 Ti-6Al-7Nb 합금의 표면 특성에 미치는 영향 (EFFECT OF ELECTROLYTE CONCENTRATION ON THE SURFACE CHARACTERISTICS OF ANODIZED AND HYDROTHERMALLY-TREATED TI-6AL-7NB ALLOY)

  • 장태엽;송광엽;배태성
    • 대한치과보철학회지
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    • 제43권5호
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    • pp.684-693
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    • 2005
  • Statement of problem: Ti-6Al-7Nb alloy is used instead of Ti-6Al-4V alloy that was known to have toxicity. Purpose: This study was performed to investigate the effect of electrolyte concentration on the surface characteristics of anodized and hydrothermally-treated Ti-6Al-7Nb alloy Materials and methods: Discs of Ti-6Al-7Nb alloy of 20 mm in diameter and 2 mm in thickness were polished sequentially from #300 to 1,000 SiC paper ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. Anodizing was performed at current density $30mA/cm^2$ up to 300 V in electrolyte solutions containing $\beta-glycerophosphate$ disodium salt hydrate $(\beta-GP)$ and calcium acetate (CA). Hydrothermal treatment was conducted by high pressure steam at $300^{\circ}C$ for 2 hours using a autoclave. All samples were soaked in the Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 30 days. Results and conclusion: The results obtained were summarized as follows: 1. After hydrothermal treatment, the precipitated HA crystals showed the dense fine needle shape. However, with increasing the concentration of electrolyte they showed the shape of thick and short rod. 2. When the dense fine needle shape crystals was appeared after hydrothermal treatment, the precipitation of HA crystals in Hanks' solution was highly accelerated. 3. The crystal structures of $TiO_2$ in anodic oxide film were composed of strong anatase peak and weak rutile peak as analyzed with thin-film X-ray diffractometery. 4. The Ca/P ratio of the precipitated HA layer was equivalent to that of HA crystal in Hanks' solution.

가수분해법에 의한 TiO2 피복 운모의 제조(I) (Preparation of the TiO2 Coated Mica by Hydrolysis Method(I))

  • 박윤창;김효중;곽중협;서태수
    • 공업화학
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    • 제8권5호
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    • pp.709-714
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    • 1997
  • 암모니아수를 이용한 가수분해법에 의해 운모의 이산화티타늄 피복을 시행하여 합성조건의 영향을 조사했다. 운모표면에 균일한 $TiO_2$ 피막을 얻기 위해서는 운모의 입자경이 작고 비표면적이 넓은 쪽이 유리하다. 또한 반응용액상에서 생선된 입자는 운모표면에 유리상태로 부착하여 피막을 불균일화시키므로, 용액상에서의 수화 $TiO_2$ 콜로이드 입자 생성속도를 느리게 제어할 필요가 있다. 본 실험에서 운모의 크기는 $14.7{\mu}m$, 운모 슬러리 용액의 pH는 2.5, $TiOSO_4$ 용액의 F.A.는 291, 반응온도는 $80{\sim}100^{\circ}C$ 정도가 적당하였다. 이상의 결과로부터 균일한 피복을 실현하기 위해서는, 반응온도를 변화시켜 입자의 석출율을 제어하는 일이 필요하다. 이 경우 석출율이 큰 쪽이 균일하고 치밀한 피막을 얻을 수 있었다. 이렇게 하여 얻어진 $TiO_2$ 피복 운모는 $900^{\circ}C$의 소성전후에서 형태에 큰 변화는 없었다.

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Sol-gel deposited TiInO thin-films transistor with Ti effect

  • Kim, Jung-Hye;Son, Dae-Ho;Kim, Dae-Hwan;Kang, Jin-Kyu;Ha, Ki-Ryong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.200-200
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    • 2010
  • In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

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열수처리 시간에 따른 Ti-6Al-7Nh 합금의 생체활성 평가 (Evaluation of Bioactivity of Ti-6Al-7Nb Alloys with Various Hydrothermal Treatment Times)

  • 권오성;최석규;박광범;이민호;배태성;이오연
    • 한국재료학회지
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    • 제14권12호
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    • pp.876-884
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    • 2004
  • This study was to investigate whether the bioactivity of the anodized and hydrothermally treated Ti-6Al-7Nb alloy were affected by the time of hydrothermal treatment. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}-glycerophosphate$ disodium salt hydrate $(DL-{\alpha}-GP)$ and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 30 min, 1 hr, 2 hrs, and 4 hrs to produce a thin film layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 10, 20, and 30 days. Anodic oxide films were porous with pore size of $1\sim4{\mu}m\;and\;3\sim4{\mu}m$ thickness. The anodic oxide films composed with strong anatase peak with presence of rutile peak, and showed the increase in intensity of anatase peak after hydrothermal treatment. It was shown that the intensity of anatase peak increased with increasing the time of hydrothermal treatment but was no difference in rutile peak. The corrosion voltage was the highest in the group of hydrothermal treatment for 2 hrs (Ecorr: -338.6 mV). The bioactivity in Hank's solution was accelerated with increasing the time of hydrothermal treatment.

용액 공정을 이용한 Indium-Zinc-Oxide 박막 기반 저항 스위칭 메모리의 전기적 특성 (Electrical Characteristics of Resistive-Switching-Memory Based on Indium-Zinc-Oxide Thin-Film by Solution Processing)

  • 김한상;김성진
    • 한국전기전자재료학회논문지
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    • 제30권8호
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    • pp.484-490
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    • 2017
  • We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.