• 한국진공학회지
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• 제9권4호
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• pp.394-399
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.

• 한국세라믹학회지
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• 제31권10호
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• 한국세라믹학회지
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• 제26권3호
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• 한국세라믹학회지
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• 제26권4호
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• pp.539-549
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• 1989

Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

• 한국세라믹학회지
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• 제30권2호
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• pp.148-156
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• 1993

TiN films were deposited onto high speed steel (SKH9) by plasma assisted chemical vapor deposition (PACVD) using a TiCl4/N2/H2/Ar gas mixture at around 50$0^{\circ}C$. The effects of the deposition temperature, R.F. power and TiCl4 concentration on the deposition of TiN and the microhardness of TiN film were investigated. The crystallinity and the microhardness of TiN films were improved with increase of the deposition temperature. Optimum deposition temperature in this study was 50$0^{\circ}C$, because a softening or phase transformation of the substrate occurred over 50$0^{\circ}C$. A large increase of the film growth rate with a strong(200) preferred orientation was obtained by increasing R.F. power. Much chlorine content of about 10at.% was found in the deposited films and resulted in relatively low average microhardness of about 1, 500Kgf/$\textrm{mm}^2$ compared with the theoretical value(~2, 000Kgf/$\textrm{mm}^2$).

• 한국세라믹학회지
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• 제26권1호
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• pp.21-30
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• 1989

Titanium Nitride (TiN) was deposited onto the SKH9 tool steels by chemical vapor deposition (CVD) using a gaseous mixture of TiCl4, N2, and H2. The effects of the deposition temperature and input gas composition on the deposition rate, microstructure, preferred orientation, microhardness and wear resistance of TiN deposits were studied. The experimental results showed that the TiN deposition is thermally activated process with an apparent activation energy of about 27Kcal/mole in the temperature range between 1200$^{\circ}$K and 1400$^{\circ}$K. As H2/N2 gas input ratio increased, the deposition rate increased, showed maximum at H2/N2 gas input ratio of 1.5 and then decreased. Mechanical properties such as microhardness and wear resistance have close relation with the microstructure and preferred orientation of TiN deposits. It is suggested that the equiaxed structure with random orientation increases the microhardness and wear resistance of TiN deposits.

• 열처리공학회지
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• 제3권1호
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• pp.1-7
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• 1990

To investigate the influence of r.f. power and electrode distance on the TiN deposition, TiN films were deposited onto STC3, STD11 steel and Si-wafer from gas mixtures of $TiC_4/N_2/H_2$ using the radio frequency plasma assisted chemical vapor deposition. The crystallinity of TiN film could be improved by the increase of r.f. power and the decrease of electrode distance. The TiN coated layer contains chlorine, its content were decreased with increasing r.f. power as well as decreasing electrode distance. And the thickness of deposited TiN was largely affected by r.f. power and electrode distance. The hardness of deposited TiN reached a maximum value of about Hv 2,000.

• 대한기계학회논문집
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• 제16권12호
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• pp.2340-2348
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• 1992

본 연구에서는 드릴(SKH9종)에 스퍼터링법으로 Ti 중간층을 약 0.2$\mu\textrm{m}$의 두께 로 코팅한후, 그 위에 플라즈마 화학증착법으로 TiN박막을 코팅한 드릴로 드릴링 시험 을 행하여 수명을 평가하였으며, 드릴의 내마멸성 및 드릴링한 구멍 내면의 조도를 코 팅하지 않은 드릴 및 TiN 코팅한 드릴과 비교하므로서 Ti/TiN코팅처리에 의한 공구성 능 및 수명향상 효과를 평가하고자 하였다.

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.161-161
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• 2011

Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.