• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• 한국재료학회지
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• 제11권7호
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• pp.537-544
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• 2001

$TiO_2$광촉매릉 반응성 스퍼터링법을 이웅하여 박막으로 제조하고 유기물 및 살균실험을 통하여 미세조직이 광촉매 효율에 미치는 영향을 조사하고자 하였다. 광촉매 효율측정을 위하여 페놀분해실험 및 E.coli 078을 이용한 살균실험을 행하였다. $TiO_2$박막에 의한 페놀분해실험 시, 전자수용체인 산소의 공급에 의하여 분해효율이 2배까지 증가하였다. E.coli 078분해실험의 경우, 광촉매 $TiO_2$박막을 사웅하여 살균하였을때 UV만 조사하여 살균하였을 경우 보다 분해효율이 최고 70% 이상 증가하였다. 페놀분해실험과 E.coli 078 살균실험 결과 저결정성 박막의 경우 분해능이 매우 미약하였으며, 표면조도가 높고 결정성이 우수한 박막의 경우에 높은 광촉매 효율을 나타내어$TiO_2$박막의 광촉매 효과는 표면형상과 결정성이 매우 중요한 인자로 작용하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.105-108
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• 2018

Transparent $TiO_2$ nanotube arrays are successfully prepared by a two-step approach involving electrochemical anodization and RF magnetron sputtering. First, a Ti film is deposited on an FTO substrate by RF magnetron sputtering at room temperature. The morphologies of the Ti film are controlled by the working distance, Ar flow, and DC power. Second, an anodization treatment is electrochemically performed for the formation of nanotube arrays from the deposited Ti film, followed by post-annealing treatment in air for the formation of $TiO_2$ crystallization. The back side of the crystallized $TiO_2$ nanotube arrays is illuminated with solar light to characterize the photoelectrochemical reaction, and their photoelectrochemical properties are investigated. This work provides information on application of a thin film deposited by RF sputtering in the field of photoelectrochemical water splitting.

• 한국세라믹학회지
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• 제42권7호
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• pp.461-468
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• 2005

Transparent TiO$_{2}$ sols were prepared by hydrothermal synthesis to heat Ti precursor solutions, from Ti hydroxides obtained with neutralizing aqueous TiOCl$_{2}$ solutions having various concentrations of NaCI by aqueous NaOH solution, in the autoclave at 120$^{\circ}C$ The photocatalytic abilities of glass beads coated with the sol for gaseous benzene were evaluated. As a result, it was found that due to the increase of brookite phase in TiO$_{2}$ by controlling the concentration of Na ion the optical absorption of TiO$_{2}$ increases toward long wavelength but that in the area of short wavelength becomes relatively low and consequently the photocatalytic performance of TiO$_{2}$ thin film for benzene gas rather decreases, compared to that of composite film of anatase and brookite phases. These results suggest that in order for coated TiO$_{2}$ thin film to have high dissociation performance for benzene gas it is effective to form anatase and brookite phases compositely in TiO$_{2}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.50-50
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• 2007

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

• 분석과학
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• 제6권2호
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• pp.239-246
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• 1993

ITO coated glass, bare glass, 그리고 (100)Si 기판 위에 증착된 $(BaSr)TiO_3$ 박막의 구조는 기판의 종류에 관계없이 변하지 않았으나 결정성은 다결정 ITO층과 (100)Si 기판에 있어서 증대되었다. ITO coated glass 기판 위에 증착된 $(BaSr)TiO_3$ 박막의 조성은 거의 화학양론적으로 일치하였으며 ((Ba+Sr)/Ti=1.08~1.09) 증착 중 상당히 치밀하고 균질하였다. 그러나 증착온도가 증가함에 따라 성장한 박막과 ITO층 사이에, 그리고 ITO층과 base glass 사이에 확산이 보다 심화되었다. ITO coated glass 기판 위에 증착된 $(BaSr)TiO_3$ 박막은 상당히 투명하였으며(투과율 약 80%) 굴절률($n_f$)은 기판온도의 증가에 따라 2.138~2.286이었다.

• 한국재료학회지
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• 제12권8호
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• pp.676-681
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• 2002

Microstructure, mechanical properties, and oxidation resistance of TiAIN thin films deposited on quenched and tempered STD61 tool steel by arc ion plating were studied using XRD, XPS and micro-balance. The TiAIN film was grown with the (200) orientation. The grain size of TiAIN thin film decreased with increasing Al contents, while chemical binding energy increased with Al contents. When hard coating films were oxidized at $850^{\circ}C$ in air, oxidation resistance of both TiN and TiCN films became relatively lower since the surface of films formed non-protective film such as $TiO_2$. However, oxidation resistance of TiAIN film was excellent because its surface formed protective layer such as $_A12$$O_3$ and $_Al2$$Ti_{7}$$O_{15}$, which suppressed oxygen intrusion.