• Title/Summary/Keyword: Ti 확산

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Behavior of Diffusion Layer Formation for TiNi/6061Al Smart Composites by Vacuum hot Press (진공 Hot Press법에 의한 TiNi/6061Al 지적 복합재료의 확산층 형성거동)

  • Park, Kwang-Hoon;Park, Sung-Ki;Shin, Soon-Gi;Lee, Jun-Hee
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.955-961
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    • 2002
  • 2.7vol%TiNi/6061 Al composites with TiNi shape memory alloy as reinforcement were fabricated by vacuum hot press. It was investigated by OM, SEM, EPMA and XRD analysis for the behavior of diffusion layer formation on various heat treatment condition. Thickness of diffusion layer was increased proportionally according to heat treatment time. The layer was formed by the mutual diffusion of TiNi and Al. The diffusion rate from TiNi fiber to Al matrix was faster than that of reverse diffusion path. The more diffused layer was formed in Al matrix. The diffusion at interface layer was consisted of $A1_3$Ti, $Al_3$Ni analyzed by EPMA, XRD results.

Ta-Segregation on TiC(001) Surface Studied by Time-Of-Flight Impact-Collision Ion Scattering Spectroscopy (비행시간형 직충돌 이온산란 분광법을 사용한 TiC(001)면의 Ta편석 연구)

  • Hwang, Yeon;Hishita, Shunichi;Souda, Ryutaro
    • Korean Journal of Materials Research
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    • v.7 no.7
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    • pp.559-563
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    • 1997
  • Ta을 2MeV의 에너지로 가속시켜 1x$10^{17}$atoms/$\textrm{cm}^2$의 농도로 TiC(001)면에 이온 주입시킨 후 비행시간형 직충돌이온산란 분광법(time-of-flight impact-collision ion scattering spectroscopy; TOF-ICISS)을 사용하여 TiC(001)면의 Ta표면 편석을 연구하였다. TOF-ICISS는 표면 수층 깊이까지 원자구조를 측정할 수 있는 수법으로, 이온주입된 시편을 1$600^{\circ}C$에서 300sec동안 진공 가열하여 Ta 원자를 편석시킨 후 스펙트럼의 입사각도 의존성을 구함으로써 Ta원자의 편석 위치 및 농도구배를 조사하였다. [110]및 [100]방위에서 Ta과 Ti의 focusing peak가 서로 같은 입사각도에서 나타나며 편석된 Ta원자는 TiC의 Ti-site에 위치한다. Ta원자는 표면 최외층에만 편석되는 것이 아니라 수층에 걸쳐 Ti-site에 자리하고 있으며, Ta 원자의 농도는 표면 최외층에서 내부 층으로 깊어질수록 작아진다. 이온주입시 생성된 표면층의 탄소 격자 결함은 시편 가열시 벌크에 자리하는 탄소가 확산되어 없어진다.다.

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Kinetic and Statistical Analysis of Adsorption and Photocatalysis on Sulfamethoxazole Degradation by UV/$TiO_2$/HAP System (UV/$TiO_2$/HAP 시스템에서 Sulfamethoxazole의 흡착과 광촉매반응에 대한 동역학적 및 통계적 해석)

  • Chun, Suk-Young;Chang, Soon-Woong
    • Journal of the Korean GEO-environmental Society
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    • v.13 no.5
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    • pp.5-12
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    • 2012
  • Antibiotics have been considered emerging compounds due to their continuous input and persistence in environment. Due to the limited biodegradability and widespread use of these antibiotics, an incomplete removal is attained in conventional wastewater treatment plants and relative large quantities are released into the environment. In this study, it was determined the adsorption and photocatalysis kinetics of antibiotics (Sulfamethoxazole, SMX) with various catalyst (Titanium dioxide; $TiO_2$, Hydroxyapatite; HAP) conditions under UV/$TiO_2$/HAP system. In addition, the statistical analysis of response surface methods (RSM) was used to determine the effects of operating parameters on UV/$TiO_2$/HAP system. $TiO_2$/HAP adsorbent were found to follow the pseudo second order reaction in the adsorption. In the result of applied intrapaticle diffusion model, the constants of reaction rate were $TiO_2$=$0.064min^{-1}$, HAP=$0.2866min^{-1}$ and $TiO_2$/HAP=$0.3708min^{-1}$, respectively.The result of RSM, term of regression analysis in analysis of variance (ANOVA) showed significantly p-value (p<0.05) and high coefficients for determination values($R^2$=96.2%, $R^2_{Adj}$=89.3%) that allowed satisfactory prediction of second order regression model. And the estimated optimal conditions for Y(Sulfamethoxazole removal efficiency, %) were $x_1$(initial concentration of Sulfamethoxazole)=-0.7828, $x_2$(amount of catalyst)=0.9974 and $x_3$(reation time)=0.5738 by coded parameters, respectively. According to the result of intraparticle diffusion model and photocatalysis experiments, it was shown that the $TiO_2$/HAP was more effective system than conventional AOPs(advanced oxidation processes, UV/$TiO_2$ system).

Low Temperature Growth of Silicon Oxide Thin Film by In-direct Contacting Process with Photocatalytic TiO2 Layer on Fused Silica (광촉매 TiO2 층의 비접촉식 공정을 통한 저온 실리콘 산화박막 성장)

  • Ko, Cheon Kwang;Lee, Won Gyu
    • Applied Chemistry for Engineering
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    • v.19 no.2
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    • pp.236-241
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    • 2008
  • The possibility of silicon oxidation through the aerial-diffusion of active oxygen species has been evaluated. The species originate from the surface of $TiO_2$ exposed by UV. Among process parameters such as UV intensity, substrate temperature and chamber pressure with oxygen, UV intensity was a major parameter to the influence on the oxide growth rate. When 1 kW high pressure Hg lamp was used as a UV source, the growth rate of silicon oxide was 8 times as faster as that of a 60 W BLB lamp. However, as the chamber pressure increased, the growth rate was declined due to the suppression of aerial diffusion of active oxygen species. According to the results, it could be confirmed that the aerial-diffusion of active oxygen species from UV-irradiated photocatalytic surface can be applied to a new method for preparing an ultra-thin silicon oxide at the range of relatively low temperature.

TCC behavior of a shell phase in core/shell structure formed in Y-doped BaTiO3: an individual observation (Yttrium이 첨가된 BaTiO3에서 형성된 core/shell 구조에서 shell의 TCC 거동: 독립적 관찰)

  • Jeon, Sang-Chae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.3
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    • pp.110-116
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    • 2020
  • Grains in the BaTiO3, which is used for a dielectric layer in MLCC(Multi-Layer Ceramic Capacitor) are necessary to form core/shell structure for a stable TCC(Temperature Coefficient of Capacitance) behavior. The shell property has been deduced from the whole TCC behavior of core/shell structure due to its tiny size, ~ few ㎛. This study demonstrates the individual TCC behavior of the shell phase measured by micro-contact measurement in a temperature range between 35 and 135℃. Pt electrode pairs deposited on an enlarged core/shell structure in a diffusion couple sample made the measurement possible. As a result, the DPT (Diffusion Phase Transition) behavior of the shell phase was revealed as a different TCC behavior from that of the core: a broad peak with Tm at 65℃. This would be also useful experimental data for a modelling that depicts dielectric-temperature behavior of core/shell structure.

연속압입 분석을 이용한 W-C-N 확산방지막 물성 연구

  • Lee, Gyu-Yeong;Kim, Su-In;Park, Sang-Jae;Lee, Dong-Gwan;Jeong, Yong-Rok;Jeong, Jun;Lee, Jong-Rim;Lee, Chang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.181-181
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    • 2010
  • 현대 반도체 금속배선 연구에서는 기존에 쓰이던 Al (Aluminium) 금속배선 대신에 Cu (Copper) 금속배선 연구가 진행되고 있다. Cu는 Al 보다 비저항이 낮고, 녹는점도 Al보다 높다는 장점이 있지만 저온에서 기판인 Si (Silicon) 과 반응하고 접착력이 우수하지 못 하다는 단점이 있다. 이런 문제를 해결하기 위하여 확산방지막을 기판과 금속배선 사이에 삽입하는 방법이 제시 되었다. 확산방지막으로는 기존에 쓰이던 Ti (Titanium) 계열의 확산방지막과 W (Tungsten) 계열의 확산방지막이 있다. 이번 연구에서는 W 계열의 확산방지막에 불순물 C (Carbon) 과 N (Nitrogen) 을 첨가한 W-C-N 확산방지막 시편을 제조하였고, N2의 비율을 변화시키며 $600^{\circ}C$, $800^{\circ}C$열처리를 하였다. 본 실험의 결과로, 확산방지막의 $N_2$ 농도가 0, 0.5, 2 sccm으로 증가할수록 고온에서도 Elastic modulus 와 Hardness 값이 시편의 여러 영역에서 비교적 안정적으로 유지된다는 결과를 얻었다. 이 결과로부터 W-C-N 박막의 질소 농도에 따라 고온에서도 비교적 안정적으로 유지된다는 결과를 얻었다. 본 연구에서 시편은 RF magnetron sputtering 방법으로 제작하였고 Elastic modulus와 Hardness의 측정은 Hysitron사의 Triboindenter를 이용하였다. Indenting에 사용된 압입팁은 Berkovich tip을 사용하였다.

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Characteristics of electrodes using V-Ti based hydrogen storage alloys (V-Ti계 수소저장합금의 전극특성)

  • 김주완;이성만;백홍구
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.284-291
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    • 1997
  • The electrode characteristics of two kinds of metal hydride electrodes using V-Ti (V-rich) based alloy were studied, in which one electrode was prepared by sintering the mixture of V-Ti alloy and Ni powders by a rapid thermal annealing technique and the other one was prepared using V-Ti-Ni ternary alloy, The discharge capacities of all electrodes during the charge-discharge cycling were completely deteriorated within 10 cycles. It appeared that the deterioration of the electrodes was caused by the dissolution of V in the near-surface region into the electrolyte and the formation of $TiO_2$ layer on the alloy particle surface. This degradation mechanism was supported by the facts that V is main hydride forming element and $TiO_2$ has very low electrical conductivity and hydrogen diffusivity.

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Crack propagation behavior of in-situ structural gradient Ni/Ni-aluminide//Ti/Ti-aluminide laminate materials (Ni/Ni-aluminide//Ti/Ti-aluminide 구조경사형 층상재료의 균열 전파 거동)

  • Chung, D.S.;Kim, J.K.;Cho, H.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.6
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    • pp.269-275
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    • 2005
  • Ni/Ni-aluminide/Ti/Ti-aluminide laminate composite, considered as a functionally gradient material, was manufactured by thin foil hot press technique. Thick intermetallic layers of NiAl and $TiAl_3$ were formed by a self-propagating high-temperature synthesis (SHS) reaction, and thin continuous taters of $Ni_3Al$ and TiAl were formed by a solid-state diffusion. Fracture resistance with loading along the crack arrester direction is higher than crack divider direction due to the interruption of crack growth in metal layers. The $Ni_3Al$ and NiAl intermetallic layer showed cleavage and intergranular fracture behavior, respectively, while the fracture mode of $TiAl_3$ layer was found to be an intragranular cleavage. The debonding between metal and intermetallic layer and the pores were observed in the Ni/Ni-aluminide layers, resulting in the lower fracture resistance. With the results of acoustic emission (AE) source characterization the real time of failure and the effect of AE to crack growth could be monitored.