• Korean Journal of Materials Research
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• v.19 no.7
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• pp.349-355
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• 2009

Metal thin film patterns on a LTCC substrate, which was connected through inner via and metal paste for electrical signals, were formed by a screen printing process that used electric paste, such as silver and copper, in a conventional method. This method brought about many problems, such as non uniform thickness in printing, large line spaces, and non-clearance. As a result of these problems, it was very difficult to perform fine and high resolution for high frequency signals. In this study, the electric signal patterns were formed with the sputtered metal thin films (Ti, Cu) on an LTCC substrate that was coated with protective oxide layers, such as $TiO_2$ and $SiO_2$. These electric signal patterns' morphology, surface bonding strength, and effect on electro plating were also investigated. After putting a sold ball on the sputtered metal thin films, their adhesion strength on the LTCC substrate was also evaluated. The protective oxide layers were found to play important roles in creating a strong design for electric components and integrating circuit modules in high frequency ranges.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.11
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• pp.29-35
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• 2015

The photo-response characteristics of polysilicon based metal-semiconductor-metal (MSM) photodetector structure, depending on deuterium treatment method, was analyzed by means of the dark-current and the light-current measurements. Al/Ti bilayer was used as a Schottky metal. Our purpose is to incorporate the deuterium atoms into the absorption layer of undoped polysilicon, effectively, for the defect passivation. We have introduced two deuterium treatment methods, a furnace annealing and an ion implantation. In deuterium furnace annealing, deuterium bond was distributed around polysilicon surface where the light current flows. As for the ion implantation, even thought it was a convenient method to locate the deuterium inside the polysilicon film, it creates some damages around polysilicon surface. This deteriorated the photo-response in our photodetector structure.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.194-200
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• 2006

Titanium oxide films were deposited by the nozzle type HCP RT-MOCVD for the application of metal-oxide films. In the case of TTNB, after depositing films, films must be annealed at a proper temperature, but in the case of titanium ethoxide, titanium oxide films could be directly deposited by titanium ethoxide without general annealing. We could confirm that ratio of O to Ti in the films was about 2 : 1 at RF-power of 240 watt, distance between cathode and substrate of 3 cm, deposition time of 20 min, and ratio of Ar to $O_2$ of 1 : 1. Therefore, we could obtain the titanium oxide film deposited by the nozzle type HCP RT-MOCVD without an annealing process and could apply in the metal-oxide deposition process at a low temperature.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.190-190
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• 2009

전자산업에의 필수인 커패시터는 소형화, 저저항, 고전압을 향한 추세가 늘고 있으며, 이외에도 고전압 전원, 고전압 회로 등 중전기기에 필요한 고전압, 고용량 커패시터가 사용되고 있다. 중전기기에 사용되는 커패시터는 기기에 따라 틀리지만 내전압이 보통 10kV 이상이고 정전용량이 500pF 안팎이며, 대부분 외국에서 수입에 의존하고 있는 실정이다. 본 연구에서는 $Nb_2O_5$를 2mol% 첨가한 $BaTiO_3$를 일반적인 고상 소결법으로 제조하고 성형 시 crack을 방지하기 위해 binder 및 plasticizer를 사용하였으며, binder 첨가량에 따른 성형밀도를 측정하여 최적의 binder양을 선택하였다. 성형 밀도가 떨어짐에 따라 절연파괴강도가 낮아지기 때문에 성형 밀도를 높이기 위해 CIP를 하였으며, 소결후 capacitance와 d-factor를 측정하여 수치가 허용 범위에 들어 올 경우 전극을 형성하고 표면파괴를 방지하기 위하여 epoxy로 표면코팅을 하였다. DC 60kV용 Hi-pot tester를 사용하여 15kV까지 선형적으로 증가시켜 내전압 테스트를 실시하였으며, 제조 된 커패시터 중 몇 개의 sample을 SEM 및 XRD를 사용하여 미세구조와 결정상을 조사하였다.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.9
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• pp.423-430
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• 2002

The fabrication and experimentation of multi-channel electrodes which enable detecting and recording of multi-site neuronal signals have been investigated. A multi-channel electrode array was fabricated by depositing 2000${\AA}$ thick Au layer on the 1000${\AA}$ thick Ti adhesion layer on a glass wafer. The metal paths were patterned by wet etching and passivated by depositing a PECVD silicon nitride insulation layer to prevent signals from intermixing or cross-talking. After placing a thin slice of rat cerebellar granule cell in the culture ring located in central portion of the multi-channel electrode plate, a neuronal signal from an electrode which is in contact with the cerebellar granule cell has been detected. It was found that the electrode impedance ranges 200㏀∼1㏁ and the impedance is not changed by cleaning with nitric acid. Also, the impedance is inversely proportion to the exposed electrode area and the cross-talk is negligible when the electrode spacing is bigger than 600$\mu\textrm{m}$. The amplitude and frequency of the measured action potential were 38㎷ and 2㎑, which are typical values. From the experimental results, the fabricated multi-channel electrode array proved to be suitable for multi-site neuronal signal detection for the analysis of a complicated cell network.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.4
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• pp.418-424
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• 2006

In order to improve the activation properties of the $AB_2$ type hydrogen storage alloys for Ni-MH battery, the alloy surface was modified by employing high energy ball milling. The $Zr_{0.54}Ti_{0.45}V_{0.54}Ni_{0.87}Cr_{0.15}Co_{0.21}Mn_{0.24}$ alloy powder was ball milled for various period by using the high energy ball mill. As the ball milling time increased, activation of the $AB_2$ type composite powder electrodes were enhanced regardless of additives. When the ball milling time was small discharge capacities of the $AB_2$ type composite powder electrodes increased with the milling time. On the other hand for large milling time it decreased with increasing milling time. The maximum discharge capacity was obtained by ball milling for 3-4 min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.387-391
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• 2012

Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2119_2120
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• 2009

전압을 인가하였을 때 전계방향에 의해 가역적으로 색이 변화하는 현상을 전기변색(electrochromism)이라고 한다. 이러한 전기채색현상을 보이는 물질을 전기채색물질(electrochromism materials)이라고 하며, 전기채색 물질에 의한 소자를 전기채색소자(electrochromism device : ECD)라고 한다. 전기채색현상은 투과율(transmittance), 반사율(reflectance)의 가역적이며 가시적인 변화이고, 전기화학적인 산화환원 반응과 관련이 있다. 따라서 본 연구에서는 Titanate nanotube(TNT)를 제조하고 전기변색소자(ECD)에 응용하였다. SEM, XRD, UV-Vis등을 이용하여 재료학적 분석을 시행하였으며, 전기화학적 테스트로 cyclic voltammetry를 측정 하였다. 그 결과 TNT 분말은 직경 약 20~30 nm, 길이 약 500~600 nm 의 입자형상을 나타내었으며, X-선 회절시험결과 $H_2Ti_2O_5{\cdot}H_2O$의 층상구조를 나타내었다. 제조된 막은 FTO glass 위에 PEI/(TNT/TBAOH)$_{n-1}$/PDDA의 순으로 코팅되었다. 전기화학적 테스트를 위하여 2전극 시스템을 제작하였으며, 여러 종류의 액체 전해질을 제작하여 cycle voltammetry를 시행하였다. 그 결과, 각각의 전해질에서 "-"영역의 산화환원전위 피크가 뚜렷하게 나타났으며, 짙은 갈색으로의 채색현상을 나타냈다. 본 연구의 결과로서 TNT 박막을 이용한 ECD은 광조절 유리로서 뿐만 아니라, 여러 전기채색 디바이스에 응용될 것으로 사료된다.