• Title/Summary/Keyword: Ti 전극

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Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

The Charge/Discharge for Metal Oxides Substitution and Doping of $Li_4Ti_5O_{12}$ ($Li_4Ti_5O_{12}$에서 금속 산화물 치환에 따른 충방전 효과)

  • Kang, Mi-Ra;Jee, Mi-Jung;Bae, Hyeon;Choi, Byung-Hyun;Kim, Sei-Ki;Lee, Mi-Jea
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.44-45
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    • 2006
  • 초고용량 캐패시터(Supercapacitor)는 이차전지와 더불어 차세대 전지로 분류되는 신형에너지 장치로서 충 방전 속도가 다르고 순간 전력공급이 가능하며 충 방전 수명이 반영구적으로 길고 고출력을 내기 때문에 이차전지가 갖지 못하는 영역에서 동력에너지원으로 사용된다. 본 연구에서는 초고용랑 캐패시터의 전극소재인 탄소계 재료를 대신하여 비탄소계 전극소재인 $Li_4Ti_5O_{12}$의 고상법 제조를 위한 Li/Ti의 최적 조성과 혼합 방법으로 Li-Ti 계에 $Fe_2O_3$, NiO, $Nb_2O_5$, $Sb_2O_3$ 그리고 ZnO와 같은 금속산화물로 치환시켜 합성된 Li -Ti계 금속산화물의 특성 및 충 방전 효과에 미치는 영향을 관찰하고자 하였다.

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CPW travelling-wave electrodes, Mach-Zehnder type Ti:LiNbO3 optical modulator (CPW 진행파 전극, M-Z형 Ti:LiNbO3 광 변조기)

  • Pi Joong-Ho;Jung Eun-Joo;Choi Jung-Sung;Kim Chang-Min
    • Korean Journal of Optics and Photonics
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    • v.15 no.5
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    • pp.475-482
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    • 2004
  • We have fabricated a LiNbO$_3$ travelling-wave optical modulator. The travelling-wave modulator consisted of M-Z(Mach-Zehnder) interferometer and CPW(Coplanar Waveguide) travelling-wave electrodes. Design of CPW electrodes were performed by SOR(Successive Over Relaxation) to obtain the conditions of Microwave effective index and impedance matching. The fabricated modulator had -3.2 dB insertion loss, and S$_{11}$ below -15 dB up to 12 GHz, S$_{21}$ better than -3 dB upto 7 GHz. It turned out that the optical response showed the 3 dB bandwidth of above 12 GHz.

$Si_3N_4$를 이용한 금속-유전체-금속 구조 커패시터의 유전 특성 및 미세구조 연구

  • 서동우;이승윤;강진영
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.75-75
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    • 2000
  • 플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 Si3N4 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커페시터를 구현하였다. Fig.1에 나타낸 바와 같이 p형 실리콘 웨이퍼의 열 산화막 위에 1%의 실리콘을 함유하는 알루미늄을 스퍼터링으로 증착하여 전극을 형성하고 두 전극사이에 Si3N4 박막을 증착하여 MIM구조의 박막 커패시터를 제조하였다. Si3N4 유전막은 150Watt의 RF 출력하에서 반응 가스 N2/SiH4/NH3를 각각 300/10/80 sccm로 흘려주어 전체 압력을 1Torr로 유지하면서 40$0^{\circ}C$에서 플라즈마 화학증착법을 이용하여 증착하였으며, Al과 Si3N4 층의 계면에는 Ti과 TiN을 스퍼터링으로 증착하여 확산 장벽으로 이용하였다. 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 유전 특성의 차이점을 미세구조 측면에서 이해하기 이해 극판과 유전막의 단면 미세구조를 투과전자현미경(Transmission Electron Microscope, TEM)을 이용하여 분석하였다. 유전체인 Si3N4 와 전극인 Al의 계면반응을 억제시키기 위해 TiN을 확산 장벽으로 사용한 결과 MIM커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. Fig.2와 같은 커패시턴스의 전류-전압 특성분석으로부터 양질의 MIM커패시터 특성을 f보이는 Si3N4 의 최소 두께는 500 이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. TEM을 이용한 단면 미세구조 관찰을 통해 Si3N4 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.

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Properties of the carbon electrode perovskite solar cells with various annealing processes (열처리 방법에 따른 카본전극 페로브스카이트 태양전지의 특성 변화)

  • Song, Ohsung;Kim, Kwangbea
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.2
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    • pp.26-32
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    • 2021
  • The photovoltaic properties and microstructure changes were observed while perovskite solar cells (PSCs) with a fabricated carbon electrode were formed using the following annealing processes: hot-plate, oven, and rapid thermal annealing (RTA). Perovskite solar cells with a glass/FTO/compact TiO2/meso TiO2/meso ZrO2/carbon structure were prepared. The photovoltaic properties and microstructure changes in the PSCs were analyzed using a solar simulator, optical microscopy, and field emission scanning electron microscopy. An analysis of the photovoltaic properties revealed outstanding properties when RTA was applied to the cells. Microstructure analysis showed that perovskite was formed locally on the carbon electrode surface when hot-plate and oven annealing were applied. On the other hand, PSC with RTA showed a flat surface without extra perovskite agglomeration. Denser perovskite formed on the porous carbon electrode layer with RTA showed superior photovoltaic properties. These results suggest that the RTA process might be appropriate for the massive production of carbon electrode PSCs considering the processing time.

An Updated Review of Recent Studies on Dimensionally Stable Anodes (DSA) (불용성 산화 전극(DSA)의 최신 연구 동향)

  • Park, Su-Ryeon;Park, Jin-Soo
    • Journal of the Korean Electrochemical Society
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    • v.23 no.1
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    • pp.1-10
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    • 2020
  • DSA (Dimensionally Stable Anode) electrodes are physically, thermally and electrochemically stable and are mainly Ti electrodes coated by Ru, Ir and Ta. DSA electrodes have been used in many industrial fields such as chlor-alkali, electrochemical water treatment, water electrolysis, etc. This review paper summarizes the study on the applications using DSA electrodes published in the recent 5 years. It suggests that the researches are intensively required on effective screening of electrodes materials, optimal designing of electrode structures and economical manufacturing of large area electrodes. It is expected that these studies will contribute to the further research and development on advanced DSA electrodes. In addition, the enhancement of DSA electrodes significantly leads to expand the type of the application using electrochemical processes in industry.

Studies on the anodic oxidation of some volatile organic halogen compounds(THM) (휘발성 할로겐 화합물(THM)의 양극 산화에 관한 연구)

  • Yoo, K.S.;Park, S.Y.;Yang, S.B.;Woo, S.B.
    • Analytical Science and Technology
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    • v.10 no.4
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    • pp.264-273
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    • 1997
  • Anodic oxidation reaction was applied to remove trihalomethanes in an aqueous solution. Each component was determined by using solid phase microextraction(SPME) fiber and GC-ECD. Anodic and cathodic compartments were separated in order to protect contaminants and connected by $KNO_3$-agar bridge. The calibration graphs of the 6 THM components were shown good linearlity from a few ppb up to a few hundreds ppb concentration level. Anodes such as platinum(Pt), titanium(Ti). zircornium(Zr), titanium metal coated with iridium(Ti-Ir), and glassy carbon coated with mixed valence ruthenium(mv Ru) were tried to remove the THMs at different potentials. The best result was obtained on the Ti-Ir anode applied 9 volts DC. The electrode could effectively remove almost all the THM components from the stirring solution within about 1.5 hours. The glassy carbon electrode coated with mixed valence ruthenium showed excellent removing effect at the begining, but the maximum removing level was remained at 60% probably due to the destruction of the electrode surface. The concentration of chloroform, however, tends to be increased due to the electrode reaction producing the component at the condition.

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Effects of Heat-treatments on Discharge Characteristics of TiFe1-xNix Alloy Electrodes for Ni/MH Secondary Battery (Ni/MH 2차전지용 TiFe1-xNix 합금전극의 방전특성에 대한 열처리의 영향)

  • Joung, Soon-dol;Joung, Sang-sik;Ahn, Hyo-jun;Kim, Ki-won
    • Transactions of the Korean hydrogen and new energy society
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    • v.9 no.4
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    • pp.135-141
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    • 1998
  • The effects of heat-treatment on discharge characteristics of $TiFe_{1-x}Ni_x$ alloy were investigated. The content of Ni in alloy was varied from x = 0.1 to 0.6 by each 0.1 increment. Discharge capacity change of each alloy with C/D cycles was measured. With increasing Ni-content initial discharge capacity was increased. but at x = 0.6 it was deceased again. With increasing C/D cycles discharge capacity was rapidly decreased in the alloy of high Ni-content. In order to investigate the effects of heat-treatment on cycle life, $TiFe_{0.5}Ni_{0.5}$ alloy having maximum initial discharge capacity was heat-treated at various temperatures in the range of $700{\sim}900^{\circ}C$ and tested. The loss of initial discharge capacity was appeared at all temperatures. but cycle characteristics of the alloy was improved. The electrodes heat-treated for 1 hour in the range of $700{\sim}850^{\circ}C$ showed good recovery of discharge capacities through repeated cycles, and from SEM observation results these were considered as 1 hour in the range of $700{\sim}850^{\circ}C$ showed good recovery of discharge capacities through repeated cycles, and from SEM observation results these were considered asbeing due to increased electrode strength and small loss of porosity during heat-treatment. The electrode heat-treated for 1 hour at $900^{\circ}C$ showed poor discharge characteristics because of low porosity.

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Characteristics of Ta-Ti Gate Electrode for NMOS Device (NMOS 소자의 Ta-Ti 게이트 전극 특성)

  • Kang, Young-Sub;Seo, Hyun-Sang;Noh, Young-Gin;Lee, Chung-Keun;Hong, Shin-Nam
    • Journal of Advanced Navigation Technology
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    • v.7 no.2
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    • pp.211-216
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    • 2003
  • In this paper, characteristics of Ta-Ti alloy was studied as a gate electrode for NMOS devices to replace the widely used polysilicon. Ta-Ti alloy was deposited directly on $SiO_2$ by a co-sputtering method using two of Ta and Ti targets. The sputtering power of each metal target was 100W. To compare with Ta-Ti, Ta deposited with a 100W sputtering power was fabricated as well. In order to investigate the thermal/chemical stability of the Ta-Ti alloy gate, the alloy was annealed at $600^{\circ}C$ with rapid thermal annealer. No appreciable degradation of the device was observed. Also the results of electrical analysis showed that the work function of Ta-Ti metal alloy was about 4.1eV which was suitable for NMOS devices and sheet resistance of alloy was lower than that of polysilicon.

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Characteristics of $TiO_2$ Ceramic Electrode for the Photoelectrochemical Conversion (광전기 화학 변환을 위한 $TiO_2$ 세라믹 전극의 특성)

  • 윤기현;김종선;윤상옥
    • Journal of the Korean Ceramic Society
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    • v.20 no.4
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    • pp.356-360
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    • 1983
  • The photocurrent vs. potential characteristics of the $TiO_2$ ceramic electrodes have been investigated as functions of numerous variables including sample purity hydrogen reduction condition and pH of the electrolyte. The difference inphotoresponse between 99.99% and 98.5% $TiO_2$ electrodes was due to electron trapping effect. As the hydrogen reducing temperature of $TiO_2$ electrodes were increased the photocurrent was also increased to certain condition and then decreased. These results can be explained by the behavior of oxygen vacancies.

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