• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.156-159
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• 2003

Permanent structure of photoinduced singlemode waveguide in optical fluoride glasses was demonstrated using the self-channeled plasma filament excited by a femtosecond (110 fs) Ti:sapphire laser ($λ_p$ = 800 nm). The photoinduced refractive index modification in ZBLAN glasses reached a length of approximately 10 - 15 mm from the input surface of the optical glass with the diameters ranging from 5 to 8 ${\mu}{\textrm}{m}$ at input intensities more than l.0 ${\times}$ $10^{12}$ W/$\textrm{cm}^2$. The graded refractive index profiles were fabricated to be a symmetric form from the center of an optical fluoride glass and a maximum value of refractive index change (ㅿn) was measured to be l.3${\times}$$10^{-2}$. The beam profile of the output beam transmitted through the modified region showed that the photoinduced refractive index modification produced a permanent structure of singlemode waveguide.

• Journal of the Optical Society of Korea
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• 제7권3호
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

• 전자공학회논문지D
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• 제35D권8호
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• pp.62-68
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• 1998

Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권6호
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• pp.286-292
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• 2005

Terahertz wave is a kind of electromagnetic radiation whose frequency lies in 0.1THz $\~$10THz range. In this paper, generation and detection characteristics of terahertz (THz) radiation by photoconductive antenna (PCA) method has been described. Using modern integrated circuit techniques, micron-sized dipole antenna has been fabricated on a low-temperature grown GaAs (LT-GaAs) wafer. A mode-locked Ti:Sapphire femtosecond laser beam is guided and focused onto photoconductive antennas (emitter and detector) to generate and measure THz pulses. Ultra-wide band THz radiation with frequencies between 0.1 THz and 3 THz was observed. Terahertz field amplitude variation with antenna bias voltage, pump laser power, pump laser wavelength and probe laser power was investigated. As a primary application example. a live clover leaf was imaged with the terahertz radiation.

• Design & Manufacturing
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• 제14권3호
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• pp.44-49
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• 2020

One of display trends today is development of high pixel density. To get high PPI, a small size of pixel must be developed. RGB pixel is arranged by evaporation process which determines pixel size. Normally, a fine metal mask (FMM; Invar alloy) has been used for evaporation process and it has advantages such as good strength, and low thermal expansion coefficient at low temperature. A FMM has been manufactured by chemical etching which has limitation to controlling the pattern shape and size. One of alternative method for patterning FMM is laser micromachining. Femtosecond laser is normally considered to improve those disadvantages for laser micromachining process due to such short pulse duration. In this paper, a femtosecond laser drilling for thickness of 16 ㎛ FMM is examined. Additionally, we introduce experimental results for controlling taper angle of hole by vibration module adapted in laser system. We used Ti:Sapphire based femtosecond laser with attenuating optics, co-axial illumination, vision system, 3-axis linear stage and vibration module. By controlling vibration amplitude, entrance and exit diameters are controllable. Using vibrating objective lens, we can control taper angle when femtosecond laser hole drilling by moving focusing point. The larger amplitude of vibration we control, the smaller taper angle will be carried out.

• 한국정밀공학회지
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• 제26권3호
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• pp.25-31
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• 2009

Femto-second laser ablation with the various feed velocities of the Invar alloy and the micro surface milling for the processing condition were studied. We used a regenerative amplified Ti:sapphire laser with a 1kHz repetition rate, 184fs pulse duration time and 785nm wavelength. Femto-second laser pulse was irradiated on the Invar alloy with the air blowing at the condition of various laser peak powers and feed velocities. An ablation characteristic according to feed velocity of the Invar alloy was appeared as the non-linear type at different zone of energy fluence. The micro surface milling of the Invar alloy using a mapping method was investigated. The optimal condition of micro surface milling was laser peak power of 22.8mW, feed velocity of 1 mm/s, beam gap of $1{\mu}m$. With the optimal processing condition, the fine rectangular shape without burr and thermal damage was achieved. Using the femto-second laser system, it demonstrates excellent tool for micro surface milling of the Invar alloy without heat effects and poor edge.

• 한국레이저가공학회지
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• 제15권3호
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• pp.16-19
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• 2012

We have successfully formed brown colored patterns inside of a transparent borosilicate glass generally known as BK7, laying the focus of near infrared Ti: sapphire femtosecond laser beam in the bulk BK7 glass. It is important to keep the laser power well below the damage threshold of BK7 in forming the color center. According to the low laser power, there was no laser induced mechanical damage such as cracks or threads in the color formed area. From the absorbance spectrum and its gaussian fitting, we found the band gap of BK7, 4.21eV, and three absorption edges.

• 한국광학회지
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• 제18권5호
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• pp.345-350
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• 2007

광결정 광섬유에서 생성되는 초 연속스펙트럼의 특성을 일반화된 비선형 슈뢰딩거 방정식과 split step 퓨리에 방법을 이용하여 전산모사 하였다. 그 결과를 바탕으로 200 fs 펄스폭을 갖는 Ti:sapphire 레이저와 광결정 광섬유를 이용하여 650nm부터 900nm에 이르는 파장영역에서 ${\pm}4dB$ 이하의 평탄도를 가지는 초 연속스펙트럼을 실험적으로 생성하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.