• 한국분말재료학회지
• /
• 제15권6호
• /
• pp.503-508
• /
• 2008

Ti(C,N) solid solutions in hot-pressed Ti($C_{x}N_{1-x}$) (x=0.0, 0.3, 0.5, 0.7, 1.0) and 40TiC-40TiN-20Ni (in wt.%) cermet were characterized in this study. For hot-pressed Ti(C,N)s, the lattice parameters and hardness values of Ti(C,N) were determined by using XRD (X-Ray Diffraction) and nanoindentation. The properties of hot-pressed Ti(C,N) samples changed linearly with their carbon or nitrogen contents. For the TiC-TiN-Ni cermet, the hardness of the hard phase and binder phase were determined by nanoindentation in conjunction with microstructural observation. The measured hardness values were ${\sim}8.7$ GPa for the binder phase and ${\sim}28.7$ GPa for the hard phase, which was close to the hardness of hot-pressed Ti($C_{0.7}N_{0.3}$).

• 한국세라믹학회지
• /
• 제44권1호
• /
• pp.37-42
• /
• 2007

The preparation of $TiC_{0.7}N_{0.3}$ powder by SHS in the system of $Ti-TiH_2-C$ ($N_2$ atmosphere) was investigated in this study. In the preparation of $TiC_{0.7}N_{0.3}$ powder, the effect of gas pressure, compositions such as Ti, $TiH_2$, C, and additive in mixture on the reactivity were investigated. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure $TiC_{0.7}N_{0.3}$ was $0.75Ti+0.25TiH_2+0.7C+0.5NaCl$. The $TiC_{0.7}N_{0.3}$ powder synthesized in this condition was a single phase with irregular shape.

• 대한전기학회논문지
• /
• 제41권8호
• /
• pp.869-874
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• 대한전기학회논문지
• /
• 제41권6호
• /
• pp.633-639
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• The Korean Journal of Ceramics
• /
• 제3권2호
• /
• pp.124-128
• /
• 1997

An attempt was made to understand the dissolution and reprecipitation behavior of the constituent phases such as TiC, TiN, and Ti(CN) in TiC-TiN-Ni system. During the liquid-phase sintering the TiC phase was found to dissolve preferentially in Ni binder. The solid-solution phase, Ti(CN), formed around the TiN phase, resulting in a core/rim structure. This result was reproduced when large TiC particles were used with fine TiN particles. The path for the microstructural change in TiC-TiN-Ni system was largely controlled by the difference in the interfacial energy of each phase with the liquid binder phase. The results were discussed with thermodynamic principles.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 1988년도 제7회 학술강연회초록집
• /
• pp.39-42
• /
• 1988

요업체 절삭공구(ceramic tool)는 공구강이나 초경제품에 비해 고속 절삭 작업이 가능하며 생산성을 높일 수 있기 때문에 최근 주목을 받고 있다. 본 실험에서 모재(substrate)로 사용된 $Si_3N_4$-TiC ceramic은 요업체 공구중에서 파괴인성이 우수하며, 주철이나 초합금을 절삭할 때 우수한 성능을 나타낸다. 그러나 요업체 절삭공구중에서 경도가 낮은 편에 속하며, Fe,Mn,O와 $Si_3N_4$가 화학적 반응을 일으켜서, steel을 절삭할 때 상면 마모(crater wear)가 심하게 발생하기 때문에 우수한 성능을 나타내지 못하고 있는 실정이다. 따라서 이러한 단점을 보완하기 위해 공구의 표면에 보호피막(protective coating)을 입히는 것은 필수적이다. 본 연구에서는 반응변수들이 TiC 및 TiN 증착층의 증착속도, 미세구조, 화학적 조성 및 증착층과 substrate 사이의 interface를 조사하여 각 증착층의 최적증착조건을 규명하고자 한다.

• 한국재료학회지
• /
• 제1권1호
• /
• pp.9-17
• /
• 1991

화학증착법에 의해 $Si_3N_4-TiC$ 복합재료 위에 코팅된 TiC 박막은 TiN 박막에 비하여 우수한 미세구조와 열충격저항, 계면결합을 가지고 있는 것으로 나타났다. 화학증착법에 의한 TiN 박막은 TiC 박막에 비해 강철과의 마찰계수가 작고 화학적으로 안정하였다. 실험결과는 코팅된 절삭공구가 우수한 내 마모성을 갖고 있는 것으로 나타났다. 또한, 다중 코팅된 절삭공구는 단일 코팅된 공구보다 우수한 내 마모성을 보였다

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2001년도 추계학술발표회 초록집
• /
• pp.42-42
• /
• 2001

• 한국표면공학회지
• /
• 제29권4호
• /
• pp.261-267
• /
• 1996

The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.834-837
• /
• 2003

In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.