• 한국결정성장학회지
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• 제32권1호
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• pp.7-11
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• 2022

한미보석감정원은 최근에 5개의 투명한 합성 모이사나이트를 검사했다. 그 샘플들은 라운드 브릴리언트 컷의 무색, 핑크, 황색, 청색, 적색 컬러와 0.93~0.96 ct 중량을 가지고 있었다. FT-IR과 Raman 분석 결과 합성 모이사나이트임을 확인하였고, 확대검사 결과 무색을 제외한 나머지 샘플에서 코팅의 흔적이 발견되었다. EDXRF 분석 결과 무색 샘플을 제외한 모든 샘플의 코팅부분에서 Ca, Ti, Co의 미량원소가 검출되었다. 무색 샘플의 Raman 분석에서 탄소 원자의 sp³ bonding에 의해 생성되는 1332 cm^-1 또는 graphite와 관련된 sp² bonding에 의해 생성되는 ~1550 cm^-1는 발견되지 않았다. 무색 샘플의 SEM 이미지에서도 코팅의 흔적은 발견되지 않았으나, TEM 이미지에서 3~8 nm의 코팅층의 존재가 발견됐다. EDX line 프로파일과 EDX elements map을 통해 무색 샘플의 코팅층을 구성하는 원소는 C, Si, O로 추정된다.

• Journal of Korean Society for Atmospheric Environment
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• 제16권E호
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• pp.19-27
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• 2000

Particle Induced X-ray Emission (PIXE) and Elemental Analysis Syztem (EAS) were applied to the investiga-tion of the Characteristics and sources of wintertime atmospheric aerosols in Seoul. Atmospheric aerosols were collected by both fine and coarse fractions using a two-stage filter pack sampler from Kon-Kuk university during the winter season of 1999. PIXE was applied to the analysis of the middle and heavy elements with atomic numbers greater than 14(Si) and EAS was applied to the measurement of the light elements such as H, C and N. The fact that 64.2% of mass of fine particles in Seoul consists of the light elements (N, C , and H) suggests that the measurement of light elements is extremely important. The average mass concentration is Seoul was 38.6$\mu\textrm{g}$m(sup)-3. Elements such as Ca, Fe, Mg, and Ti appeared to have very low Fine/Coarse ratios(0.1∼0.4), whereas che-mical components related to anthropogenic sources such as Br, V, Pb, and Zn were observed to accumulate in the fine fraction. In the Asian Dust Storm(ADS) event, the concentation of soil components increased dramatically. Reconstruction of the fine mass concentrations estimated by a newly revised simple model was fairly in good agreement with the measured ones. Source identification was attempted using the enrichment factor and Pearsons coefficient of correlation. The typical elements derived from each source could be classified by this method.

• 대한의용생체공학회:의공학회지
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• 제6권1호
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• pp.37-46
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• 1985

Development of a dental Ni-Cr alloy system for porcelain veneering crown and bridge was studied in this research. The principles of alloy design were a) It should not contain toxic beryllium. b) It should have low melting Point. c) It should be easily ground and polished. d) It should possess an adequate strength to resist the deformational force In the mouth. e) It should be bondable Ivith porcelain by chemically. After investigating the effect of minor elements such as boron and rare earth metals on the mechanical properties of the Ni-Cr alloy system, the compromised ideal composition for dental use was determined. The composition was l9.6%, Cr, 5.6% Mo, 3.4% Si, 1, 0% Fe, 0.01% Ti, 0.5-1.0% B, 0.2-0.6% misch metal, balance Ni. To compare the performance of experimental alloy with commercially available alloys, the properties such as strength, melting point, and bond strength were measured. The results Ivere as follows: a) Boron increases the strength of the alloy but reduces the elongation. b) Misch metal increases the strength when the boron content is low, but does not increase the strength when boron content is high. And it reduces the elongation drastically, c) Mechanical strength of the experimental alloy was not superior to commercially available Be containing alloy, but handling performance such as castability, ease of granting and polishing, and cuttability were superior to the Be containing alloy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.120-120
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• 2006

탄소나노튜브는 nm급의 크기에 높은 전기전도도, 열전도 효율, 감한 기계적 강도 등의 장점을 가지며, FED(Field Emission Display), 극미세 전자 스위칭 소자, SET(Single Electron Transistor), AFM(Atomic Force Microscope) tip등 여러 분야로의 응용을 연구하고 있다. 본 연구에서는 탄소나노튜브를 Si 웨이퍼 위에 Ni/Ti 금속층을 촉매층으로 사용하고, 암모니아($NH_3$)가스와 아세틸렌 ($C_2H_2$)가스를 각각 희석가스와 성장원으로 사용하여 합성하였다. 탄소나노튜브의 성장은 Hot filament 화학기상증측(HFPECVD) 방식을 사용하였으며, 이 방법은 다량의 합성, 높은 균일성, 좋은 정렬 특성등의 장점을 가진다. 성장 온도는 탄소나노튜브의 성장 특성을 변화시키는 중요한 요소이다. 성장 온도에 따라 수직적 성장, 성장 밀도등의 특성 변화를 관찰하였다. 성장된 탄소나노튜브층 성분 분석은 에너지 분산형 X-선 측정기(EDS)를 통해 관찰하였고, 끝단에 촉매층이 존재하는 30~50 nm 폭을 가진 다중벽 탄소나노튜브를 고배율 투과전자현미경(HRTEM) 분석을 통해 관찰하였다. 전계방사 주사전자현미경(FESEM) 분석을 동해 1~3${\mu}m$의 길이를 가진 탄소나노튜브가 높은 밀도로 성장된 것을 확인하였다.

• 마이크로전자및패키징학회지
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• 제11권2호
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• pp.23-28
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• 2004

본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다.

• 천문학회지
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• 제52권3호
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• pp.57-69
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• 2019

We present an analysis of the chemical abundances and kinematics of six low-mass dwarf stars, previously claimed to be candidate hypervelocity stars (HVSs). We obtained moderate-resolution (R ~ 6000) spectra of these stars to estimate the abundances of several chemical elements (Mg, Si, Ca, Ti, Cr, Fe, and Ni), and derived their space velocities and orbital parameters using proper motions from the Gaia Data Release 2. All six stars are shown to be bound to the Milky Way, and in fact are not even considered high-velocity stars with respect to the Galactic rest frame. Nevertheless, we attempt to characterize their parent Galactic stellar components by simultaneously comparing their element abundance patterns and orbital parameters with those expected from various Galactic stellar components. We find that two of our program stars are typical disk stars. For four stars, even though their kinematic probabilistic membership assignment suggests membership in the Galactic disk, based on their distinct orbital properties and chemical characteristics, we cannot rule out exotic origins as follows. Two stars may be runaway stars from the Galactic disk. One star has possibly been accreted from a disrupted dwarf galaxy or dynamically heated from a birthplace in the Galactic bulge. The last object may be either a runaway disk star or has been dynamically heated. Spectroscopic follow-up observations with higher resolution for these curious objects will provide a better understanding of their origin.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 공업화학
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• 제17권5호
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• pp.458-464
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• 2006

팔라듐 합금 복합막의 제조는 니켈 분말과 무기화합물의 혼합물로 개질된 튜브형 다공성 스테인레스 스틸 지지체 표면 위에 무전해 도금법(elctroless plating technique)에 의해 팔라듐 - 니켈 - 은을 박막으로 도금하는 형태로 이루어졌다. 일반적인 다공성 금속 지지체는 기공이 크기 때문에 그 자체로서 도금에 적합한 지지층이 되기가 어렵고, 결함이 없는 팔라듐 복합막의 제조가 쉽지 않아 본 연구에서는 금속 지지체와 팔라듐 사이에 중간층(intermediate layer)을 형성하여 이와 같은 문제점을 극복하고자 하였다. 중간층의 소재인 실리카 졸, 알루미나 졸, 이산화티타늄 졸 등의 무기화합물과 니켈 분말의 혼합물로 다공성 금속 지지체 위에 코팅하여 박막을 형성하고 제조 조건에 따른 질소 투과도를 측정하고 비교하였다. SEM 분석법에 의해 니켈과 무기화합물 혼합물의 표면층의 형성 모습도 측정하였다. 제조된 중간층 가운데 이산화티타늄 졸과 니켈의 혼합물이 가장 낮은 질소 투과도와 치밀한 표면층을 나타내었다. 최종적으로 니켈과 실리카의 혼합 중간층으로 이루어진 팔라듐-니켈-은 합금 복합막을 제조하고 수소와 질소의 투과도를 측정하였다. 1기압 이하에서 질소에 대한 수소 선택도는 무한대였으며 수소투과 속도는 1 기압, $500^{\circ}C$에서 $1.39{\times}10^{-2}mol/m^2{\cdot}s$의 값을 나타냈다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2002년도 제3회 최신 분말제품 응용기술 Workshop
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• pp.25-37
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• 2002

The most important industrial application of gamma radiation in characterizing green compacts is the determination of the density. Examples are given where this method is applied in manufacturing technical components in powder metallurgy. The requirements imposed by modern quality management systems and operation by the workforce in industrial production are described. The accuracy of measurement achieved with this method is demonstrated and a comparison is given with other test methods to measure the density. The advantages and limitations of gamma ray densitometry are outlined. The gamma ray densitometer measures the attenuation of gamma radiation penetrating the test parts (Fig. 1). As the capability of compacts to absorb this type of radiation depends on their density, the attenuation of gamma radiation can serve as a measure of the density. The volume of the part being tested is defined by the size of the aperture screeniing out the radiation. It is a channel with the cross section of the aperture whose length is the height of the test part. The intensity of the radiation identified by the detector is the quantity used to determine the material density. Gamma ray densitometry can equally be performed on green compacts as well as on sintered components. Neither special preparation of test parts nor skilled personnel is required to perform the measurement; neither liquids nor other harmful substances are involved. When parts are exhibiting local density variations, which is normally the case in powder compaction, sectional densities can be determined in different parts of the sample without cutting it into pieces. The test is non-destructive, i.e. the parts can still be used after the measurement and do not have to be scrapped. The measurement is controlled by a special PC based software. All results are available for further processing by in-house quality documentation and supervision of measurements. Tool setting for multi-level components can be much improved by using this test method. When a densitometer is installed on the press shop floor, it can be operated by the tool setter himself. Then he can return to the press and immediately implement the corrections. Transfer of sample parts to the lab for density testing can be eliminated and results for the correction of tool settings are more readily available. This helps to reduce the time required for tool setting and clearly improves the productivity of powder presses. The range of materials where this method can be successfully applied covers almost the entire periodic system of the elements. It reaches from the light elements such as graphite via light metals (AI, Mg, Li, Ti) and their alloys, ceramics ($AI_20_3$, SiC, Si_3N_4, $Zr0_2$, ...), magnetic materials (hard and soft ferrites, AlNiCo, Nd-Fe-B, ...), metals including iron and alloy steels, Cu, Ni and Co based alloys to refractory and heavy metals (W, Mo, ...) as well as hardmetals. The gamma radiation required for the measurement is generated by radioactive sources which are produced by nuclear technology. These nuclear materials are safely encapsulated in stainless steel capsules so that no radioactive material can escape from the protective shielding container. The gamma ray densitometer is subject to the strict regulations for the use of radioactive materials. The radiation shield is so effective that there is no elevation of the natural radiation level outside the instrument. Personal dosimetry by the operating personnel is not required. Even in case of malfunction, loss of power and incorrect operation, the escape of gamma radiation from the instrument is positively prevented.