• Korean Journal of Materials Research
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• v.1 no.1
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• pp.37-45
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• 1991

In order to control the microstructures, the sintering behavior and abnormal grain growth with Ba/Ti ratio variation of $BaTiO_3$were investigated. The $BaTiO_3$powders used in this study were prepared by conventional calcination of $BaCO_3$ and $TiO_2$. The onset temperatures of the sintering were lowered and the densification was enhanced with increasing amounts of $TiO_2$ excess. These results are because of decrease of calcined particle sizes. A eutectic melt above temperature of $1320^{\circ}C$ did not assist the densification. Grain growth was strongly inhibited with increasing amounts of $TiO_2$ excess. The inhibition of grain growth caused abnormal grain growth due to inhomogeneous distribution of Ti-rich second phase.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1035-1041
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• 2001

The refining process and solubility of Ti in Al matrix during mechanical alloying (MA) were investigated by using X-ray diffraction (XRD), transmission electron microscopy (TEM) as functions of alloy composition, milling time and ball to powder ratio (BPR). Mechanical alloyed samples were annealed for investigating their stability and the formation behavior of$Al_3Ti$in the temperature range from$200{\circ}C$to$600{\circ}C$. It is observed from present experimental that disappearance of Ti peaks in mechanically alloyed Al-10wt%Ti is not simply attributable to the dissolution of Ti into Al, but associated mainly with extreme refining and/or heavy straining of Ti particles The annealing of the mechanically alloyed Al-Ti powders show differences in aluminide formation behavior when Ti content in Al is equal to or less than l0wt% and higher than l5wt%Ti. When Ti-content in Al is equal to or less than l0wt%, the MA powders transform directly to a global equilibrium state forming $DO_{22}- type\;Al_3$Ti above$400{\circ}C$. In the Al-Ti samples with equal to or higher than l5wt%Ti, transitional phases of cubic$Al_3Ti$and tetragonal $Al_{24}Ti_8$ are formed above$400{\circ}C$. They are stable only below$500{\circ}C$, and, $DO_{22}-type\;Al_3Ti$ becomes dominant aluminide at temperature higher than$ 600{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.5-5
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• 1999

A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.57-61
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• 2005

The microwave dielectric properties of 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO were investigated to improve the sintering condition for the LTCC. According to the X-ray diffraction patterns, 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO had the columbite structure of TiTe$_3$O$_{8}$ phase and the ilmenite structure of MgTiO$_3$ phase and there were no second phase. Increasing the addition of H$_3$BO$_3$-SnO, the density and dielectric constant of the 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics were increased but the quality factor was decreased. The temperature coefficient of resonant frequency was shifted to the negative(-) direction with addition of H$_3$BO$_3$-SnO.EX>-SnO.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.371-380
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• 1989

The purpose of this experiment is to elucidate the reaction mechanism concerning to the formation of crystalline BaTiO3 synthesized by adding the pH control agent(KOH soln) in TiCl4 and BaCl2 solution (Wet direct synthetic method). In this expeirment, it is identified that the amorphous barium-titanate having Ba-O-Ti bonding is formed above pH5 due to the -OH- ion and Ti-gel is formed below pH5 due to the polymerization of metatitanic acid. The bonding of the amorphous Ba-O-Ti is identified by FT-IR spectrum and crystallization temperature is about 82$0^{\circ}C$. If the pH of the above system according to the -OH- ion concentration is above 13.8, the polymerized metatitanic acid will be depolymerized and produce [TiO3]2+ion and crystalline BaTiO3 is formed by reacting the produced [TiO3]-- ion with the active Ba++ ion.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.577-582
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• 2011

The newly developed ${\alpha}-case$ controlled mold material for Ti investment castings was suggested in this research. The $Al_2O_3$ mold containing interstitial $TiO_2$ and substitutional $Ti_3Al$ was manufactured by the reaction between $Al_2O_3$ and Ti. It is obvious that as the $TiO_2$ and $Ti_3Al$ content in the mold surface were increased, the depth of the interfacial reaction was significantly reduced. In addition, substitutional $Ti_5Si_3$ in the mold surface owing to the reaction between Ti and $SiO_2$ from the binder was effective for ${\alpha}-case$ reduction. Therefore, the ${\alpha}-case$ reduction was accomplished by the diffusion barrier effect of interstitial $TiO_2$, substitutional $Ti_3Al$ and $Ti_5Si_3$.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.249-257
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• 1989

Dielectric properties and the stability of the perovskite phase in the Pb(Mg1/3Nb2/3)O3 system have been investigated as a function of amount of BaTiO3 and firing temperature. In the specimens fired at 120$0^{\circ}C$, the pyrochlore phase was eliminated by the addition of 10-15m/o BaTiO3 and also the dielectric constant increased. However, the dielectric constant decreased with further addition of BaTiO3 even though no pyrochlore phase was found to be present. The reducing tendency of the pyrochlore phase decreased with lowering the firing temperature in the system of Pb(Mg1/3Nb2/3)O3 with BaTiO3. Dielectric properties in PMN ceramics were affected by the character of the BaTiO3 rather than the pyrochlore phase.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Journal of Plant Biology
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• v.39 no.3
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• pp.179-184
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• 1996

The purpose of this study is to obtain the most efficient combination of Agrobacterium tumefaciens strains and Ti plasmids for the construction of dicotyledonous plant vector system. Ti plasmid-curing A. tumefaciens A136 and KU12C3 were transformed with four kinds of Ti plasmids, pTiBo542, pTiA6, pTiKU12 and pTiAch5, respectively. The stems of 28 species of dicotyledonous plants were then inoculated with these transformants and examined for crown gall formation. The different combination of A. tumefaciens strains and Ti plasmids showed quite a difference in terms of the crown gall formation. Agrobacterium strins A136 and KU12C3 have a same plant host range in case that both strains harour the same kind of Ti plasmid, pTiBo542 or pTiAch5. However, the above-mentioned both strains have quite different host range in the event of containing the same Ti plasmid, pTiKU12 or pTiA6. In case that KU12C3 contains pTiA6 or pTiKU12, this strain has a wider plant host range than A136. The plant host range of pTiBo542 is the widest, followed by pTiA6, pTiKU12 and pTiAch5. Twelve plants among 28 tested plants are not transformed by any virulent Agrobacterium strains used in this study. In conclusion, A. tumefaciens KU12C3 and A136 harboring pTiBo542 showed the widest host range for transforming dicotyledonous plants. Also, it was acertained that the host range of Ti plasmids is affected by chromosomal level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.8-11
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• 1997

This study makes SrTiO$_{3}$ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO$_{3}$ and Si/Ti/SrTiO$_{3}$ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption rate, permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the pea\ulcorner of permittivity value of Ti/SrTiO$_{3}$ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory In the nature of permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO$_{3}$ has lower values in reverse bias.