• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.664-667
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8A
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• pp.1153-1159
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• 2000

This paper applies a seasonal ARIMA model to the timely forecasting in a line utilization and its confidence interval on the base of the past data of the lido utilization that QoS of the network is greatly influenced by and proposes the prediction algorithm of threshold violation in line utilization using the seasonal ARIMA model. We can predict the time of threshold violation in line utilization and provide the confidence based on probability. Also, we have evaluated the validity of the proposed model and estimated the value of a proper threshold and a detection probability, it thus appears that we have maximized the performance of this algorithm.

• Nuclear Engineering and Technology
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• v.41 no.8
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• pp.1109-1114
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• 2009

The evolution of a high burnup structure (HBS) in a light water reactor (LWR) $UO_2$ fuel was simulated using the Potts model. A simulation system for the Potts model was defined as a two-dimensional triangular lattice, for which the stored energy was calculated from both the irradiation damage of the $UO_2$ matrix and the formation of a grain boundary in the newly recrystallized small HBS grains. In the simulation, the evolution probability of the HBS is calculated by the system energy difference between before and after the Monte Carlo simulation step. The simulated local threshold burnup for the HBS formation was 62 MWd/kgU, consistent with the observed threshold burnup range of 60-80 MWd/kgU. The simulation revealed that the HBS was heterogeneously nucleated on the intergranular bubbles in the proximity of the threshold burnup and then additionally on the intragranular bubbles for a burnup above 86 MWd/kgU. In addition, the simulation carried out under a condition of no bubbles indicated that the bubbles played an important role in lowering the threshold burnup for the HBS formation, thereby enabling the HBS to be observed in the burnup range of conventional high burnup fuels.

• The Korean Journal of Applied Statistics
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• v.29 no.1
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• pp.221-230
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• 2016

This paper investigates volatilities of stock returns based on high frequency data from stock market. Incorporating the price duration as one of the factors in volatility, we employ the autoregressive conditional duration (ACD) model for the price duration in addition to the GARCH model to analyze stock volatilities. A combined ACD-GARCH model is analyzed in which a double-threshold is introduced to accommodate asymmetric features on stock volatilities.

• Genomics & Informatics
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• v.5 no.3
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• pp.95-101
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• 2007

In this paper, we consider the variable selection methods in the Cox model when a large number of gene expression levels are involved with survival time. Deciding which genes are associated with survival time has been a challenging problem because of the large number of genes and relatively small sample size (n<

• Journal of Broadcast Engineering
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• v.19 no.2
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• pp.268-271
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• 2014

Conventional forward error correction (FEC) code rate decision schemes using analytical source coding distortion model and channel-induced distortion model are usually complex, and require the typical process of model parameter training which involves potentially high computational complexity and implementation cost. To avoid the complex modeling procedure, we propose a simple but accurate joint source-channel distortion model to estimate channel loss threshold set for optimal FEC code rate decision.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.88-92
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• 1990

An accurate analytical threshold model is presented for fully depleted SOI which has a Metal-Insulator-Semiconductor-Insulator-Metal structure. The threshold voltage is defined as the gate voltage at which the second derivative of the inversion charge with respect to the gate voltage is maximum. Therefore the model is self-consistent with the measurement scheme. Numerical simulations show good agreement with the model with less than 3% error.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of applied mathematics & informatics
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• v.5 no.3
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• pp.643-658
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• 1998

In this paper we analyze the performance of a statistical ATM multiplexer with bursty input traffic and two thresholds in the buffer by using queueing model. Two priority levels are considered for source traffic which is modeled by Markov Modulated Poisson Process to represent the bursty characteristics. Service time distributions of two priority sources are assumed to be same and deterministic for ATM environment. The partial buffer sharing scheme with one threshold may experience a sensitive state change around the threshold. But the proposed multiplexer with two thresholds avoids this hysterical phenominon to improve the system operation.

• The KIPS Transactions:PartC
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• v.12C no.4 s.100
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• pp.559-570
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• 2005

ECN is accurate in determining traffic congestion since it explicitly notifies the incipient congestion. Therefore, ECN method has been thoroughly studied in the field of wireless TCP. This paper introduces a formula to find the optimal threshold for ECN marking. We have implemented a Petri net model of 'TCP with ECN strategy' and performed simulations on it in order to verify the validity of the formula. We have also introduced ideas of applying the formula in practice. The primary contribution of this paper is proposing a formula to find the optimal threshold for ECN marking. However, introducing the Petri net model of 'TCP with ECN strategy' is no less valuable contribution because it can be helpfully used by the researchers in studying network protocols. We have built the Petri net model by modifying the existing Petri net model of TCP. In order to add ECN strategy to the existing model, we have mainly modified the network part. We have also modified sender part and receiver part as well.