• 제목/요약/키워드: Threshold Switching

검색결과 209건 처리시간 0.022초

A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping

  • Sahu, P.K.;Mohapatra, S.K.;Pradhan, K.P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.647-654
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    • 2013
  • The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

High Efficiency Buck-Converter with Short Circuit Protection

  • Cho, Han-Hee;Park, Kyeong-Hyeon;Cho, Sang-Woon;Koo, Yong-Seo
    • IEIE Transactions on Smart Processing and Computing
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    • 제3권6호
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    • pp.425-429
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    • 2014
  • This paper proposes a DC-DC Buck-Converter with DT-CMOS (Dynamic Threshold-voltage MOSFET) Switch. The proposed circuit was evaluated and compared with a CMOS switch by both the circuit and device simulations. The DT-CMOS switch reduced the output ripple and the conduction loss through a low on-resistance. Overall, the proposed circuit showed excellent performance efficiency compared to the converter with conventional CMOS switch. The proposed circuit has switching frequency of 1.2MHz, 3.3V input voltage, 2.5V output voltage, and maximum current of 100mA. In addition, this paper proposes a SCP (Short Circuit Protection) circuit to ensure reliability.

집적화된 광 싸이리스터와 수직구조 레이저를 이용한 광 로직 AND/OR 게이트에 관한 연구 (Optical AND/OR gates based on monolithically integrated vertical cavity laser with depleted optical thyristor)

  • 김두근;정인일;최영완;최운경
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2006년도 하계학술대회
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    • pp.19-23
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    • 2006
  • Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65 mA. but also a high on/off contrast ratio more than 50 dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

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ADAPTIVE STABILIZATION OF NON NECESSARILY INVERSELY STABLE CONTINUOUS-TIME SYSTEMS BY USING ESTIMATION MODIFICATION WITHOUT USING HYSTERESIS FUNCTION

  • Sen, M.De La
    • 대한수학회보
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    • 제38권1호
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    • pp.29-53
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    • 2001
  • This note presents a an indirect adaptive control scheme for first-order continuous-time systems. The estimated plant model is controllable and then the adaptive scheme is free from singularities. The singularities are avoided through a modification of the estimated plant parameter vector so that its associated Sylvester matrix is guaranteed to be nonsingular. That properties is achieved by ensuring that the absolute value of its determinant does not lie below a positive threshold. A modification scheme based on the achievement of a modified diagonally dominant Sylvester matrix of the parameter estimates is also given as an alternative method. This diagonal dominance is achieved through estimates modification as a way to guarantee the controllability of the modified estimated model when a controllability measure of the ‘a priori’ estimated model fails. In both schemes, the use of a hysteresis switching function for the modification of the estimates is not required to ensure the nonsingularity of the Sylvester matrix of the estimates.

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Performance Analysis of Nonlinear Energy-Harvesting DF Relay System in Interference-Limited Nakagami-m Fading Environment

  • Cvetkovic, Aleksandra;Blagojevic, Vesna;Ivanis, Predrag
    • ETRI Journal
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    • 제39권6호
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    • pp.803-812
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    • 2017
  • A decode-and-forward system with an energy-harvesting relay is analyzed for the case when an arbitrary number of independent interference signals affect the communication at both the relay and the destination nodes. The scenario in which the relay harvests energy from both the source and interference signals using a time switching scheme is analyzed. The analysis is performed for the interference-limited Nakagami-m fading environment, assuming a realistic nonlinearity for the electronic devices. The closed-form outage probability expression for the system with a nonlinear energy harvester is derived. An asymptotic expression valid for the case of a simpler linear harvesting model is also provided. The derived analytical results are corroborated by an independent simulation model. The impacts of the saturation threshold power, the energy-harvesting ratio, and the number and power of the interference signals on the system performance are analyzed.

수중 음향 채널에서 적응형 OFDM의 성능 분석 (Performance analysis of an adaptive OFDM over an underwater acoustic channel)

  • 임요웅;강희훈
    • 한국전자통신학회논문지
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    • 제5권5호
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    • pp.509-515
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    • 2010
  • 최근 심해 해난 구조 통신, 해저 탐사와 환경오염에 대한 모니터링과 같은 서비스에서 수중 음향 채널을 통한 데이터의 전송은 고속이 요구되고 있다. 수중 음향 채널은 매우 복잡하고 지속적인 시변 특성을 가지므로 기존의 무선 통신 기술들은 좋은 성능을 나타내지 못한다. 이러한 수중 음향 채널에서 고속 전송을 제공하고 열악한 환경에 대해서 신뢰성이 있고 강건한 통신 서비스를 제공하기 위해서 본 논문에서는 적응형 OFDM 시스템의 성능을 분석한다. 이를 통해서, 음성 통신 서비스를 기준으로 수중 음향 채널에서 적절한 적응 알고리즘의 적응 스위칭을 위한 임계값을 제시한다.

A Congestion Control Method for Real-Time Communication Based on ATM Networks

  • Zhang, Lichen
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -3
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    • pp.1831-1834
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    • 2002
  • In this paper, we present results of a study of congestion control for real-time communication based on ATM networks. In ATM networks, congestion usually results in cell loss. Based on the time limit and priority, the cells that compete for the same output line could be lined according to the character of real-time service. We adopt priority control algorithm for providing different QoS bearer services that can be implemented by using threshold methods at the ATM switching nodes, the cells of different deadline and priority could be deal with according to the necessity. Experiments show the proposed algorithm is effective in the congestion control of ATM real-time networks

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그라핀 양자점을 도핑한 TN 셀의 고속 스위칭 특성 (Fast Switching Properties of TN Cell With Graphene Quantum Dots)

  • 김대현
    • 한국전기전자재료학회논문지
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    • 제27권2호
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    • pp.110-114
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    • 2014
  • In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.

펄스포밍의 스위칭 제어기술을 적용한 경두개 자기자극장치 (Pulse forming's switching control adopted a Transcranial Magnetic Stimulation Biomedical engineering, Dongju College University)

  • 김휘영
    • 한국정보통신학회논문지
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    • 제14권3호
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    • pp.729-736
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    • 2010
  • 본 연구에서는, 펄스포밍 제어기술과 펄스 성형을 가지는 자기 자극장치에 대해 언급 하고자 한다. 자기자극장치는 5-100초 사이에 펄스성형 기술적용과 순간적 방전코일 전류 6kA까지 상승되므로 스너버 회로를 가지는 IGBT 전력소자를 사용하였다. 57-67%의 열손실을 줄였고, 2-34%의 적은 에너지를 사용한 유도전계펄스로 전형적인 코사인 펄스와 매칭 되는것을 알수가 있었다. 자기자극장치는 펄스성형하는 기술 증가와 함께 한계 펄스진폭의 예측 되는 감소인 20-100초 사이에서 펄스성형 기술을 운동신경에 활발한 자극하기 위하여 사용된다. 자기 자극장치 프로트 타입에서 이용된 기초과학 기술에 의하여 기능을 확장할 수 있고, 전력소비를 줄일 수 있었고, 자기자극장치의 열손실에 대해서도 축소할 수가 있어, 더 나은 연구와 치료에 통해 응용할 수가 있다.

Al Doped ZnO층 적용을 통한 ZnO 박막 트랜지스터의 전기적 특성과 안정성 개선 (Improvement of Electrical Performance and Stability in ZnO Channel TFTs with Al Doped ZnO Layer)

  • 엄기윤;정광석;윤호진;김유미;양승동;김진섭;이가원
    • 한국전기전자재료학회논문지
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    • 제28권5호
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    • pp.291-294
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    • 2015
  • Recently, ZnO based oxide TFTs used in the flexible and transparent display devices are widely studied. To apply to OLED display switching devices, electrical performance and stability are important issues. In this study, to improve these electrical properties, we fabricated TFTs having Al doped Zinc Oxide (AZO) layer inserted between the gate insulator and ZnO layer. The AZO and ZnO layers are deposited by Atomic layer deposition (ALD) method. I-V transfer characteristics and stability of the suggested devices are investigated under the positive gate bias condition while the channel defects are also analyzed by the photoluminescence spectrum. The TFTs with AZO layer show lower threshold voltage ($V_{th}$) and superior sub-threshold slop. In the case of $V_{th}$ shift after positive gate bias stress, the stability is also better than that of ZnO channel TFTs. This improvement is thought to be caused by the reduced defect density in AZO/ZnO stack devices, which can be confirmed by the photoluminescence spectrum analysis results where the defect related deep level emission of AZO is lower than that of ZnO layer.