• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.360-364
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• 2015

Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.267.1-267.1
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• 2016

본 연구에서는 nematic 액정의 종류 중 하나인 5CB (4-Cyano-4'-pentylbiphenyl) 물질을 박막 트랜지스터 (TFT)의 passivation 층으로 사용했을 때 그 전기적 특성향상을 확인하였다. RF-magnetron sputtering법으로 증착된 비정질 InGaZnO 박막을 활성층으로 사용한 TFT를 제작하여 그 활성층 위에 drop형식으로 passivation 하였다. 그 결과, drain current (I_DS)가 약 10배 정도 증가하고, linear region(V_D=0.5V)에서 mobility와 subthreshold slope(SS)이 각각 6.7에서 12.2, 0.3에서 0.2로 향상되는 것이 보였다. 이것은 gate bias가 인가되었을 때 freedericksz 전이를 통한 액정의 배향과 이때 형성된 dipole 형성에 의한 것으로 보이며, 이러한 LC의 배향은 편광현미경을 통하여 표면과 수직으로 배향한다는 사실을 확인 할 수 있었고 이 LC-passivation된 a-IGZO TFT의 전기적 특성의 향상에 대한 mechanism을 제시하였다. 그리고 배향한 LC가 가지는 dipole에 의해 bias stress 상황에서 독특한 electron trapping과 recovery의 증폭효과가 나타났다. V_G=+20V의 positive gate bias stress를 1000s동안 가했을 때, passivation되지 않은 a-IGZO TFT의 경우 +4V의 threshold voltage shift(${\Delta}V$_TH)가 발생되었고, 바로 -20V의 negative gate bias를 30s간 가해주었을 때 -2.5V의 ${\Delta}V$_TH가 발생하였다. 반면 LC-passivation된 a-IGZO TFT의 경우 각각 +5V와 -4V의 ${\Delta}V$_TH로 더 큰 변화를 가져왔다. 이러한 LC에 의한 electron trapping/recovery 증폭효과에 대한 model을 제시하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• CELLMED
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• v.4 no.1
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• pp.3.1-3.8
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• 2014

Spa represents a treatment widely used in many rheumatic diseases (RD). The mechanisms by which immersion in mineral or thermal water ameliorates RD are not fully understood. The net benefit is probably the result of a combination of factors, among which the mechanical, thermal and chemical effects are most prominent. Buoyancy, immersion, resistance and temperature play important roles. According to the gate theory, pain relief may be due to the pressure and temperature of the water on skin; heat may reduce muscle spasm and increase the pain threshold. Mud-bath therapy increases plasma ${\beta}$-endorphin levels and secretion of corticotrophin, cortisol, growth hormone and prolactin. It has recently been demonstrated that thermal mud-bath therapy induces a reduction in circulating levels of prostaglandin E2, leukotriene B4, interleukin-$1{\beta}$ and tumour necrosis factor-${\alpha}$, important mediators of inflammation and pain. Furthermore, balneotherapy has been found to cause an increase in insulin-like growth factor-1, which stimulates cartilage metabolism, and transforming growth factor-${\beta}$. Beneficial anti-inflammatory and anti-degenerative effects of mineral water were confirmed in chondrocytes cultures, too. Various studies in vitro and in humans have highlighted the positive action of mud-packs and thermal baths, especially sulphurous ones, on the oxidant/antioxidant system. Overall, thermal stress has an immunosuppressive effect. Many other non-specific factors may also contribute to the beneficial effects observed after spa therapy in some RD, including effects on cardiovascular risk factors (e.g. adipokines) and changes in the environment, pleasant surroundings and the absence of work duties.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.328-332
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• 2014

Thin film transistors (TFTs) with an amorphous silicon zinc tin oxide (a-2SZTO) channel layer have been fabricated using an RF magnetron sputtering system. The effect of the change of excitation electron on the variation of the total interfacial trap states of a-2SZTO systems was investigated depending on sputtering power, since the interfacial state could be changed by changing sputtering power. It is well known that Si can effectively reduce the generation of the oxygen vacancies. However, The a-2SZTO systems of ZTO doped with 2 wt% Si could be degraded because the Si peripheral electron belonging to a p-orbital affects the amorphous zinc tin oxide (a-ZTO) TFTs of the s-orbital overlap structure. We fabricated amorphous 2 wt% Si-doped ZnSnO (a-2SZTO) TFTs using an RF magnetron sputtering system. The a-2SZTO TFTs show an improvement of the electrical property with increasing power. The a-2SZTO TFTs fabricated at a power of 30 W showed many of the total interfacial trap states. The a-2SZTO TFTs at a power of 30 W showed poor electrical property. However, at 50 W power, the total interfacial trap states showed improvement. In addition, the improved total interfacial states affected the thermal stress of a-2SZTO TFTs. Therefore, a-2SZTO TFTs fabricated at 50 W power showed a relatively small shift of threshold voltage. Similarly, the activation energy of a-2SZTO TFTs fabricated at 50 W power exhibits a relatively large falling rate (0.0475 eV/V) with a relatively high activation energy, which means that the a-2SZTO TFTs fabricated at 50 W power has a relatively lower trap density than other power cases. As a result, the electrical characteristics of a-2SZTO TFTs fabricated at a sputtering power of 50 W are enhanced. The TFTs fabricated by rf sputter should be carefully optimized to provide better stability for a-2SZTO in terms of the sputtering power, which is closely related to the interfacial trap states.

• Journal of Nutrition and Health
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• v.34 no.1
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• pp.79-88
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• 2001

Management of nutrient intakes through behavior-mordification can be important for improving exercise performance in athletes. The purpose of this study was to determine the effectiveness of nutritional counseling for improving exercise performance capability in athletes. The subjects were seven golfers and fourteen ju-do athletes from Hoseo university, and they have nor received professional hel[ from dieticians. Prior to nutritional counseling, their dietary intakes, lifestyles and dietary habits were evaluated. Nutritional counseling sessions were conducted by a trained dietician every 2-3 weeks for 3-4 month. After 5 counseling sessions, nutrient intakes, lifestyle and dietary habits were re-evaluated. Exercise performance capability was measured by maximal exercise stress test using treadmills. Individual data were assessed as quality index represents the better nutritional status. The common dietary and lifestyle problems were overeating binging, overeating, snacking and drinking alcohol prior to the nutritional counseling. After counseling sessions, the quality index of dietary habits seemed to decrease, especially in ju-do athletes, representing nutritional problems were resolved. Body fat and body mass index decreased in ju-do athletes, but not in golfers. Both athletes have shown to increase oxygen uptake at anaerobic threshold and maximal oxygen uptake status, which represents that the athletic performance capacity was improved after counseling sessions. Their respiratory quotients were decreased. In conclusion, nutritional counseling sessions over five times are an effective and efficient approach to change dietary habits to improve exercise performance capacity. Furthermore, clients can have good dietary habits and learn how to manago muscle strength by behavior modification through multiple nutritional counseling sessions. (Korean J Nutrition 34(1):79-88, 2001)

• Molecules and Cells
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• v.25 no.2
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• pp.231-241
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• 2008

Indole glucosinolates (IG) play important roles in plant defense, plant-insect interactions, and stress responses in plants. In an attempt to metabolically engineer the IG pathway flux in Chinese cabbage, three important Arabidopsis cDNAs, CYP79B2, CYP79B3, and CYP83B1, were introduced into Chinese cabbage by Agrobacterium-mediated transformation. Overexpression of CYP79B3 or CYP83B1 did not affect IG accumulation levels, and overexpression of CYP79B2 or CYP79B3 prevented the transformed callus from being regenerated, displaying the phenotype of indole-3-acetic acid (IAA) overproduction. However, when CYP83B1 was overexpressed together with CYP79B2 and/or CYP79B3, the transformed calli were regenerated into whole plants that accumulated higher levels of glucobrassicin, 4-hydroxy glucobrassicin, and 4-methoxy glucobrassicin than wild-type controls. This result suggests that the flux in Chinese cabbage is predominantly channeled into IAA biosynthesis so that coordinate expression of the two consecutive enzymes is needed to divert the flux into IG biosynthesis. With regard to IG accumulation, overexpression of all three cDNAs was no better than overexpression of the two cDNAs. The content of neoglucobrassicin remained unchanged in all transgenic plants. Although glucobrassicin was most directly affected by overexpression of the transgenes, elevated levels of the parent IG, glucobrassicin, were not always accompanied by increases in 4-hydroxy and 4-methoxy glucobrassicin. However, one transgenic line producing about 8-fold increased glucobrassicin also accumulated at least 2.5 fold more 4-hydroxy and 4-methoxy glucobrassicin. This implies that a large glucobrassicin pool exceeding some threshold level drives the flux into the side chain modification pathway. Aliphatic glucosinolate content was not affected in any of the transgenic plants.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.65-69
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• 2009

Carbon nanotubes (CNTs) were coated with undoped zinc oxide (ZnO) or 5 wt% gallium-incorporated ZnO (GZO) using various deposition conditions. The CNTs were directly grown on conical-type tungsten substrates at $700^{\circ}C$ using inductively coupled plasma-chemical vapor deposition. The pulsed laser deposition technique was used to deposit the ZnO and GZO thin films with very low stress. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy were used to monitor the variations in the morphology and microstructure of CNTs prior to and after ZnO or GZO coating. The formation of ZnO and GZO films on CNTs was confirmed using energy-dispersive x-ray spectroscopy. In comparison to the as-grown (uncoated) CNT emitter, the CNT emitter that was coated with a thin (10 nm) GZO film showed remarkably improved field emission characteristics, such as the emission current of $325\;{\mu}A$ at 1 kV and the threshold field of $1.96\;V/{\mu}m$ at $0.1\;{\mu}A$, and it also exhibited the highly stable operation of emission current up to 40 h.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.49 no.1
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• pp.46-51
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• 2004

The film coated snap bean (Phaseolus vulgaris) seeds with five different coating materials treated with 3% increase in seed weight were planted at sandy loam soil controlled moisture content of 18, 19, 20 and 21 %. The oxygen diffusion rate (ODR) was calculated from the different moisture content soil. The number of normal seedlings, seedling vigor, and seedling capability in field (seed vigor x dry matter weight) were observed at 9 days after planting and compared to the changes of ODR. The germination rate and ODR were sharply decreased simultaneously in the seeds planted at 21 % soil moisture content. Seedling emergence did not occur at all as the soil moisture content increased above 22 %. Hence this value should be considered as the threshold of soil moisture content for seedling emergence. An ODR value under 20% did not influence the percent emergence significantly. The certain difference observing in the emergence at the same ODR was not related clearly to the condition of soil. So it can be assumed that the limit of soil moisture content for the emergence of snap bean was approximately 20%. The value of 18% soil moisture content may be considered as the optimum for snap bean emergence. There was close relationship between the mean value of ODR in different soil moisture contents and the emergence. The germination rates of the seeds coated with the different materials were quite different when the seeds were planted at 21 % soil moisture. Dry weight of the seedlings from film coated seeds was decreased slightly, but the germination rates were not much different from the non-treated control under relatively higher soil moisture content (21 %). Major factor lowering emergence rate was oxygen stress while film coating act as a minor constraint for snap bean sown in excess soil moisture condition.

• Geotechnical Engineering
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• v.11 no.1
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• pp.101-112
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• 1995

Deformational characteristics of soils, often expressed in terms of shear modulus and material damping ratios, are important parameters in the design of soil-structure systems subjected to cyclic and dynamic loadings. In this paper, deformational characteristics of dry sand at small to intermediate strains were investigated using resonant column/torsional shear(RC 175) apparatus. Both resonant column(dynamic) and torsional shear (cyclic) tests were performed in a sequential series on the same specimen. With the modification of motion monitoring system, the elastic zone, where the stress strain relationship is independent of loading cycles and strain amplitude, was veri tied and hysteretic damping was found even in this zone. At strains above cyclic threshold, shear modulus increases and damping ratio decreases with increasing number of loading cycles. Moduli and damping ratios of dry sand are independent of loading frequency and values obtained from pseudostatic torsional shear tests are Identical with the values from the dynamic resonant column test, provided the effect of number of loading cycles is considered in the conlparison. Therefore, deformational characteristics determined by RC/TS tests may be applied in both dynamic and static analyses of soil-structure systems.