• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.288-288
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• 2008

The flux-coupling type superconducting fault current limiter(SFCL) is composed of a series transformer and superconducting unit of the YBCO thin films. The primary and secondary coils in the transformer were wound in series each other through an iron core and the YBCO thin film was connected with secondary coil in parallel. In a normal condition, the flux generated from a primary coil is cancelled out by its structure and the zero resistance of the YBCO thin films. When a fault occurs, the resistance of the YBCO thin films was generated and the fault current was limited by the SFCL. In this paper, we investigated the fault current limiting characteristics according to fault current level in the flux-coupling type SFCL. The experiment results that the fault current limiting characteristics was improved according to increase of the fault current level.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.470-474
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pressure sensors, in which the sensing elements were deposited on SuS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition(300$\^{C}$, 3 hr) in Ar-10%N$_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, ρ=1147.65 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=186ppm/$\^{C}$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20nA and the maximum non-linearity is 0.4%FS and hysteresis is less than 0.2%FS.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.737-740
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.432-433
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• 2006

Electro-optical (EO) characteristics of twisted nematic (TN) - liquid crystal display (LCD) on the NDLC thin film using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin film was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-cell on polyimide surface ; the stable VT curve in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained.

• 대한인간공학회지
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• 제28권2호
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• pp.35-55
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• 2009

The purpose of this study was to analyze the somatotypes of women in the early 20's, which were likely to deform due to bad posture in growth period. Accordingly, bodies of women aged 20 to 24, whose growth stopped, were measured directly and indirectly, and factors related to body shapes were extracted, body shapes were categorized based on the data, and the characteristics of each body shape were analyzed. As a result, 10 factors related to body shapes were extracted in the factor analysis, and body shapes were categorized into 6 types. Type 1 was the volume of body that was big and the longest; and the general frame was large. The straight body shape with small back protrusion; the shoulder is relatively thick and the width of the shoulder was normal. Type 2 was the volume of body that was the biggest and the upper body was the longest; the general frame was of average height. The forward body shape with the back flat; the shoulder was very thick, wide, and serious leaning forward. Type 3 was a body that was thin and the shortest. The sway-back body shape with big curvature at the back; the shoulder was thin, narrow, and straight. Type 4 was a body that was short stature, and the general frame was of average build. The forward body shape with the most serious back protrusion; the shoulder was normally thick, narrow, and straight. Type 5 was a group with small body, and the lower body and general frame are long. The sway-back body shape with protrusion at the upper shoulder and the sides leaning backward; the shoulder was thin, wide, and leaning forward. Type 6 was a thin and short body; and the general frame was small. The lean-back body shape with the smallest back protrusion and leaning backward; the shoulder was thin, narrow, and leaning backward. Characteristics of the classified body shapes can be used in producing ready-made clothes, and it is hoped that there will be follow-up studies on clothing pattern design and production based on this result.

• 생명과학회지
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• 제15권2호
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• pp.202-210
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• 2005

살모넬라는 질병을 일으키기 위해서 장내의 상피세포에 먼저 부착하여 집락을 이루게 된다. 이에 따라 살모넬라는 부착에 관여하는 세포내 몇 몇 소기관들을 합성한다. 이러한 소기관에는 type 1 fimbriae, plasmid-encoded fimbriae, long polar fimbriae 그리고 thin aggregative fimbriae 등이 있다. 본 논문에서는 type 1 fimbriae, thin aggregative fimbriae, LP fimbriae, 그리고 PE fimbriae 각각을 결손시킨 변이주와 4종류를 모두 결손시킨 변이주를 만들 수 있었다. 변이주들에 대해서 세포배양 부착성 실험을 한 결과, 각각을 결손시킨 변이주들은 몇몇 mammalian 세포주에서 야생형 살모넬라와 동일한 양상으로 부착성을 나타내었고 마우스 실험에서 야생형과 거의 마찬가지로 독성을 가지고 있었다. 반면, 4종류의 fimbriae가 모두 결손된 균주는 닭에서는 독성을 나타내었으나 마우스에서는 매우 약독화되어있음을 확인할 수 있었다. 이상의 결과로부터 오는 차이점은 닭과 비교하여 마우스에서 살모넬라의 부착을 매개하는 표면 구조에 연관성이 있음을 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.104-108
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• 1993

Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

• 한국세라믹학회지
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• 제46권6호
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.354-357
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• 1999

This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$