• 비파괴검사학회지
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• 제34권2호
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• pp.171-175
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• 2014

본 연구에서는 박막 표면을 따라 전파하는 표면파의 속도 분산성을 이용하여 박막의 두께를 비파괴적으로 측정할 수 있는 기법을 제안하였다. 표면파의 분산성을 이용하여 박막의 두께를 측정하기 위하여 전자빔증착법(E-beam evaporation)을 이용하여 Si(100) 웨이퍼 위에 니켈의 증착시간을 제어함으로서 두께가 다른 니켈 박막시험편을 제작하였다. 제작된 시험편의 실제 증착된 박막의 두께를 확인하기 위하여 SEM(scanning electron microscope)을 이용하여 박막의 단면사진을 촬영하여 두께를 확인하였다. 그 후에 두께가 다른 시험편에서의 표면파의 속도를 초음파현미경(scanning acoustic microscope)의 V(z) 곡선법을 이용하여 표면파의 속도를 측정하고 실제 측정된 두께와 표면파 속도와의 상관성을 확인하였다. 박막의 두께가 증가함에 따라 표면파의 속도는 감소하는 경향성을 나타내었다. 결론적으로 본 연구에서 제안한 표면파의 속도 분산성을 이용하여 나노 스케일 니켈 박막의 두께를 측정하는 기법이 가능성이 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.110-111
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• 2007

In order to form a p-type ZnO thin film, ZnO thin film is deposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs substrate to the ZnO thin films. Photoluminescence (PL) measurement reveals that the improved qualify of ZnO thin films is acquired at the growth temperature of $400^{\circ}C$. It is ZnO film grown at $100^{\circ}C$ that shows the change from n-type to p-type by the thermal treatment. Measured carrier concentration in the film is changed from $-5.70{\times}10^{13}\;to\;9.09{\times}10^{18}$.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 추계학술대회논문집
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• pp.355-358
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• 2003

To estimate the residual stresses in the thin film and surface coatings, combined method based on nanoindentation and finite element (FE) analysis was developed. A simple equation for estimating the residual stress was composed of the hardness and the parameters which can be driven from the nanoindentation loading and unloading behaviors. FE analysis on the nanoindentation procedure under the various residual stress levels was performed to determine the parameters that included in the equation. The equation showed a good coincidence between the estimated residual stresses and those for the FE analysis. Thus the proposed method was considered as a useful method for estimating the residual stresses in the thin film without stress free specimen.

• Journal of Electrical Engineering and Technology
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• 제11권2호
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.201-201
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• 2006

In this study the glass transition temperature in thin polymer films has been studied. Ellipsometry has been used to measure $T_{g}$ of thin film as a function of film thickness. Empirical equation has been proposed to fit the measured $T_{g}$ pattern with thickness. Also, a continuous multilayer model was proposed and derived to describe the effect of surface on the observed $T_{g}$ reduction in thin films, and the depth-dependent $T_{g}$ profile was obtained. These results showed that $T_{g}$ at the top surface was much lower than the bulk $T_{g}$ and gradually approached the bulk $T_{g}$ with increasing distance from the edge of the film. The model and equation were modified to apply for the polymer coated on the strongly favorable substrate and the freely standing film.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.102-105
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• 2004

With varying rapid thermal annealing (RTA) temperature, luminescent properties of ZnMgS:Mn thin film sputter-deposited with one target were measured. Although all samples have the same composition, $Zn_{1-x}Mg_xS:Mn$ (x=0.25) can emit luminescence between 580 and 614 nm, which is controlled by only RTA temperature. It is understood that the energy band gap shift of ZnMgS:Mn thin film phosphor occurs with varying RTA temperature.

• 한국표면공학회지
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• 제44권6호
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.