• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.121-123
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• 2007

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. As piezoelectric unimorph cantilever structure can transfer low vibration to large displacement, this structure was commonly deployed to harvest electric energy from vibrations. Piezoelectric unimorph structure was composed of small stiff piezoelectric ceramic on the large flexible substrate. As there is the large Young's modulus difference between the flexible substrate and stiff piezoelectric ceramic, flexible substrate could not homogeneously transfer the vibration to stiff piezoelectric ceramic. As a result, most piezoelectric ceramics had been broken at the certain point. We measured and analyzed the stress distribution on the piezoelectric ceramic on the cantilever.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• Journal of Magnetics
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• v.3 no.2
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• pp.55-63
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• 1998

Magnetic and magnetostrictive properties of amorphous Sm-Fe and Sm-Fe-B thin films are systematically investigated over a wide composition range from 14.1 to 71.7 at.% Sm. The films were fabricated by rf magnetron sputtering using a composite target composed of an Fe (or Fe-B) plate and Sm chips. The amount of B added ranges from 0.3 to 0.8 at. %. The microstructure, examined by X-ray diffraction, mainly consists of an amorphous phase in the intermediate Sm content range from 20 to 45 at.%. Together with an amorphous phase, crystalline phases of Fe and Sm also exist at low and high ends of the Sm content, respectively. Well-developed in-plane anisotropy is formed over the whole compositionrange, except for the low Sm content below 15 at.% and the high Sm content above 55 at %. As the Sm content increases, the saturation magnetization decreases linearly and the coercive force tends to increase, with the exception of the low Sm content where very large magnitudes of the saturation magnetization and the coercive force are observed due to the existence of the crystalline $\alpha$-Fe phase. The coercive force is affected rather substantially by the B addition, resulting in lower values of the coercive force in the practically important Sm content range of 30 to 40 at.%. Good magnetic softness indicated by well-developed in-plane anisotropy, a square-shaped hysteresis loop and a low magnitude of the coercive force results in good magnetostrictive characteristics in both Sm-Fe-B thin films. The magnetostrictive characteristics, particularly at low magnetic fields, are further improved by the addition of B; for example, at a magnetic field of 100 Oe, the magnitude of magnetostriction is -350 ppm in a Sm-Fe thin film and it is -470 ppm in a B containing Sm-Fe thin film.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.262-266
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• 2010

The Calcium-aluminate electride thin films on the quartz substrates was coated by sol-gel process. The crystallization of the C12A7 thin film was observed at $800^{\circ}C$ and high density C12A7 thin film was achieved on heat treatment at $1,200^{\circ}C$ for 1 hour. The reduction heat treatment of C12A7 thin film could be converted from insulator to conductor and the electrical conductivity was 120 S/cm in the C12A7 thin film heat treated at $1,200^{\circ}C$ with $H_2$ gas for 48 hours.

• Journal of Magnetics
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• v.4 no.4
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• pp.119-122
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• 1999

Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

• Structural Engineering and Mechanics
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• v.52 no.1
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• pp.89-95
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• 2014

We analyze the buckling of a thin elastic plate due to intrinsic stresses in thin films attached to the surfaces of the plate. In the case of cylindrical buckling, it is shown that for a plate with clamped edges compressive intrinsic film stresses can cause flexural buckling of the plate, while tensile intrinsic film stresses cannot. For a plate with free edges, film intrinsic stresses, compressive or tensile, cannot cause buckling.