• Korean Journal of Materials Research
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• v.18 no.6
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• pp.318-325
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T＋489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Korea Foundry Society
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• v.20 no.5
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• pp.344-353
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• 2000

In order to find out the casting conditions of the thin wall stainless steel exhaust manifold for automobile, the melt flow and solidification behavior simulated by the Z-CAST program were evaluated, and experimental casting result on the test casting and exhaust manifold of SSC13 alloy were investigated. From the results of this study, it was shown that the calculated results on fluid flow were in good agreement with practical thin wall test castings under the same casting conditions, as pouring metal is austenitic stainless steel(SSC13) and pouring temperature is 1575, 1630, and $1665^{\circ}C$ respectively. That calculated result with designed thin wall exhaust manifold was predicted filling up into the mold cavity, and practical casting was sound. The solidification simulation was predicted shrinkages at the bosses for original exhaust manifold, and designed it without bosses was predicted no defect. Therefore practical exhaust manifold casting was sound and in good agreement with calculated solidification results.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.7
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• pp.1-6
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• 2020

Micro-structure components applied to various disciplines are steadily demanded with lighter weight and better quality. This is because that ultra thin-wall injection molding has been paid attention with a lot of benefits such as cost reduction, shorter process period, and so forth. However, this technology is complicate and difficult to obtain high quality of products compared with conventional injection molding due to warpage caused by uneven shrinkage and molecular orientation. Since warpage of products directly affects product quality and overall performance of devices, it is essential to predict deformation behavior to achieve high precision of molded products. Therefore, this study aims to find out adequate thin-wall mold design for FPC connector housing by employing Moldflow simulation before application. In addition, experimental research is performed by using a fabricated mold structure based on simulated results to prove accuracy and reliability of the suggested simulation for warpage analysis.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.663-666
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• 1995

The domain wall motion coercivity, $H_{c}$, of magnetic materials arises from the dependence of the wall energy on localized changes in material parameters (magnetization, anisotropy, exchange energy densities). However, in an otherwise perfectly homogeneous material, the domain wall energy might change due to the change in the volume of the wall versus the wall position. Thus, any surface roughness contributes to the coercivity. Assuming different two-dimensional surface profiles, characterized by average wavelengths ${\lambda}_{x}$ and ${\lambda}_{y}$, and relative thickness variations dh/h, the coercivity due to the surface roughness has been calculated. Compared to the one dimensional case, the 2D coercivity is reduced. Depending on the ratio of ${\lambda}$ to the domain wall width, $H_{c}$ has a maximum around 2, and increasing with dh/h. With the decreasing thickness of the thin film and GMR heads, it might be the domain factor in determining the coercivity.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2001.05a
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• pp.158-162
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• 2001

SrS:Ce thin films for blue EL devices are prepared by Hot Wall Method and their crystallographic and optical characteristics are investigated by various methods. Deposition rates are decreased with substrate temperature, but increased with SrS cell temperature. The crystallographic characteristics are strongly affected by deposition rates. The peak of photoluminescence are found ar 470 and 540nm.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.10
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• pp.1327-1336
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• 2001

The structural modes driven by the low wave-number components of smooth elastic wall pressure provide a relatively weak coupling between the flow and the wall motion. If the elastic thin plate has any resonant mode whose wave-number of resonance coincides with $\omega$/U$\sub$c/, the power will be transmitted to those modes of vibration by the flows. We examine the problem in which the elastic thin plate is subject to pressure fluctuations under turbulent boundary layer. Measurements are presented of the frequency spectra of the near- and far-field pressures and radiated sound contributed by the various wave modes of the thin elastic plate. Dispersion equation for wave motions of elastic plate is used to investigate the effect of bending waves of relatively low wave number on radiated sound. The low wave-number motion of elastic plate is observed to have much less influence on the low-frequency energy of wall pressure fluctuations than that of the rediated sound. High amplitude events of the wall pressure are observed to weakly couple with high-frequency energy of radiated sound for case of low tension applied to the plate. The sound source localization is applied to the measurement of radiated sound by using acoustic mirror system.

• Journal of ILASS-Korea
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• v.11 no.3
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• pp.176-189
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• 2006

In the present study, capability of improving the liquid atomization of a high-speed liquid jet by using wall impingement is explored, and its application to a jet engine atomize. is demonstrated. Water is injected from a thin nozzle. The liquid jet impinges on a wall positioned close to the nozzle exit, forming a liquid film. The liquid film velocity and the SMD were measured with PDA and LDSA, respectively. It was shown that the SMD of the droplets was determined by the liquid film velocity and impingement angle, regardless of the injection pressure or impingement wall diameter. When the liquid film velocity was smaller than 300m/s, a smaller SMD was obtained, compared with a simple free jet. This wall impingement technique was applied to a conventional air-blasting nozzle for jet engines. A real-size air-blasting burner was installed in a test rig in which three thin holes were made to accommodate liquid injection toward the intermediate ring, as an impingement wall. The air velocity was varied from 41 to 92m/s, and the liquid injection pressure was varied from 0.5 to 7.5 MPa. Combining wall impinging pressure atomization with gas-blasting produces remarkable improvement in atomization, which is contributed by the droplets produced in the pressure atomization mode. Comparison with the previous formulation for conventional gas-blasting atomization is also made, and the effectiveness of utilizing pressure atomization with wall impingement is shown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.156-159
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• 2003

The stochiometric mixture of evaporating materials for the $CuInTe_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInTe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C\;and\;450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about $0.5{\mu}m/h$. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). From the photocurrent spectra, we have found that values of spin orbit coupling ${\Delta}So$ and crystal field splitting ${\Delta}Cr$ ware $0.283{\underline{3}}eV\;and\;0.120{\underline{0}}eV$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.98-99
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• 2008

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) 1.9501 eV - ($8.79\times10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag}$, $V_{Se}$, $Ag_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.