• 한국자원식물학회지
• /
• 제22권6호
• /
• pp.584-591
• /
• 2009

Adventitious root culture was established in the Jawahar variety of Withania somnifera using MS basal medium supplemented with 0.5 (mg/l) IAA and 2.0 (mg/l) IBA. Root tips from germinated seedlings, MS0 maintained plants and adventitious roots were maintained in suspension medium (1/2 MS basal medium supplemented with 3% sucrose) for a period of 1 to 6 months. The weight gain in roots was noted and the withanolides were extracted from the dry roots using solvents petroleum ether, 50% ethanol and chloroform. The withanolides in the chloroform fractions of all root samples analyzed were compared using thin layer chromatographic analysis. Withanolide content in adventitious root sample was found to be superior compared to other roots at any given point of time during the 6month growth period.HPLC analysis of in vitro adventitious roots showed the presence of a new compound.

• 한국전기전자재료학회논문지
• /
• 제23권10호
• /
• pp.747-751
• /
• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Journal of Microbiology and Biotechnology
• /
• 제5권2호
• /
• pp.105-109
• /
• 1995

Anticancer activity of a fraction of the ethanol extract from the root of Korean angelica (Angelica gigas Nakai) was recognized in human cancer cell lines HeLa $S_3$, K-562, and Hep $G_2$. The extract blocked the phorbol ester-inducing megakaryocytic differentiation of K-562 cells, which indicated the modification of protein kinase C (PKC) activity. In vitro assay showed the activation of PKC by the extract. An effective fraction of the Angelica gigas extract, of which $R_f$ value was 0.64 in a thin layer chromatography, was a different component from those of European angelicas. The $ED_50$ value of the fraction was 8, 9, and $16\;\mu\textrm{m}/ml$ against HeLa $S_3\;Hep\;G_2$, and K-562 cells, respectively, while the fraction showed higher $ED_50$ values against normal cell lines.

• 한국자원식물학회지
• /
• 제34권1호
• /
• pp.37-43
• /
• 2021

본 연구는 참당귀 가공 시에 버려지는 부산물인 세미를 기능성 화장품 원료로 활용가능성이 있는지 평가하기 위해 수행하였다. MTS assay 수행결과 70% 주정을 이용한 뿌리 부위별 추출물의 경우 처리농도 25 ~ 200 ㎍/mL까지 세포독성이 없었다. 추출물 200 ㎍/mL를 처리하였을 때의 melanin 생성 억제효과는 추출 부위별로 12% ~ 19%로 나타났으며, 세미와 약재의 melanin 생성 억제효과가 비슷하게 나타났다. 그리고 DPPH radical 소거능이 50%에 달하는 IC50 값은 세미 677.9 ± 30.5 ㎍/mL, 약재 728.0 ± 42.4 ㎍/mL로 나타났고, ABTS radical 소거능이 50%에 달하는 IC50 값은 세미 114.9 ± 0.1 ㎍/mL, 약재 173.6 ± 1.3 ㎍/mL으로 나타나 세미가 약재보다 항산화활성이 높게 나타났다. 따라서 본 실험결과를 고려해 봤을 때, 부산물인 세미는 기능성 화장품 원료로 이용 가능성이 높은 것으로 생각된다.

• Restorative Dentistry and Endodontics
• /
• 제23권1호
• /
• pp.366-378
• /
• 1998

Thermocondensation root canal filling technique have been used to fill accessary canals or to obtain homogeneous root caral fillings. But these thermocondensation technique inevitably produce heat in the canal which can be transmitted through the dentin and cementum and consequently damage periodontal ligamental cells and osteoblasts. In this study, System $B^{TM}$(Analytic technology, WA.D.S.A.) was used to evaluate the reaction of periodontal ligament tissue to "Continous Wave condensation technique" introduced by Buchanan, and the transmitted root surface temperature was measured according to measured root thicknesses. 12 Mandibular incisors of two adult dogs were used for the experiment. 6 controls were filled by lateral condensation technique with sealer.3 specimens were apically filled by Continuous Wave technique at $200^{\circ}C$ for 5 seconds and remaining 3 specimens were additionally backfilled using System $B^{TM}$(Analytic technology, WA.D.S.A.) was used to evaluate the reaction of periodontal ligament tissue to "Continous Wave condensation technique" introduced by Buchanan, and the transmitted root surface temperature was measured according to measured root thicknesses. 12 Mandibular incisors of two adult dogs were used for the experiment. 6 controls were filled by lateral condensation technique with sealer.3 specimens were apically filled by Continuous Wave technique at $200^{\circ}C$ for 5 seconds and remaining 3 specimens were additionally backfilled using System $B^{TM}$ at $100^{\circ}C$ for 20 seconds. Six weeks later, the dogs were sacrificed and the teeth stained with Hematoxylin and Eosin for histologic examination. 6 extracted human teeth were used to measure the transmitted temperature. After cutting off the crown, the canals were prepared and divided into 3 groups with root thickness of 1.5mm, 1.0mm, 0.5mm, 2 teeth in each group. Inside each root canal, System $B^{TM}$ was heated as with the temperature for the apically condensed and the back filled group, and the transmitted heat was measured on the external surface of the root. The temperature of System $B^{TM}$ heat spreader at $200^{\circ}C$ and $100^{\circ}C$ was also measured at root temperature. It can be concluded as follows: 1. In the thin area (200-$250{\mu}m$) of the root, root resorption could be seen even with heating at $200^{\circ}C$ for 5 seconds. 2. When the spreader was heated at $200^{\circ}C$ for 5 seconds and additionally at $100^{\circ}C$ for 20 seconds for backfill, all teeth showed root resorption regardless of their root thickness. 3. The transmitted external root surface temperature was higher as the root thickness decreased and as the heating time increased. In the thermocompaction technique using System $B^{TM}$, the spreader should be heated for the minimal time and used only in the apical area. The heated spreader shouldn't inserted to the binding point of the canal and backfilling should be done with other means of minimally heated gutta percha technique.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.331-332
• /
• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Applied Science and Convergence Technology
• /
• 제23권6호
• /
• pp.366-370
• /
• 2014

ZnO:Al transparent conductive films were deposited on glass substrates by RF magnetron sputtering technique and annealed by rapid thermal annealing system. The influence of annealing time on the structural, electrical, and optical properties of ZnO:Al thin films was investigated by atomic force microscopy, X-ray diffraction, Hall method and optical transmission spectroscopy. As the annealing time increases from 0 to 5 min, the crystallinity is improved, the root main square surface roughness is decreased and the sheet resistance is decreased. The lowest sheet resistance of ZnO:Al thin film is 90 ohm/sq. The reduction of sheet resistance is caused by increasing carrier concentration due to substituent Al ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a blue-shift due to Burstein-Moss effect with increasing annealing time.

• Applied Science and Convergence Technology
• /
• 제24권6호
• /
• pp.242-244
• /
• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 학술대회 논문집
• /
• pp.51-54
• /
• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2003년도 학술대회 논문집
• /
• pp.242-245
• /
• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.