• Journal of Magnetics
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• 제7권3호
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• pp.106-114
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• 2002

To reduce the grain size and the media noise in a typical CrMo/CoCrPtB longitudinal media, a sputtering process which includes the exposure of oxygen onto the surface of CrW$_x$ (x=0, 25, 50, 75, 100 at.%) and CrTi$_{15}$ seedlayers with the thickness of 0.5 nm have been utilized. The main results are: (1) the media grain size and the media noise are reduced when using CrW$_x$ (x=0, 25, 50 at.%) seedlayers, and not reduced when using CrTils or CrW$_x$ (x=75, 100 at.%) seedlayers, (2) AES and RHEED results suggest that W seedlayer, which has the highest melting point, forms layer-like film with very small and dense island grain, due to its high free surface energy and low mobility. On the other hand, CrW$_{50}$ and Cr seedlayers, which have lower melting point than W seedlayer, form island film, (3) to effectively reduce the media grain size and improve the media signal to noise ratio, it is essential to utilize a very thin Cr-based seedlayer with high affinity for oxygen and which forms island-like structure, such as CrW$_{50}$ seedlayer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.111-111
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• 2009

In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.17-22
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• 2006

2단계 스퍼터링으로 강유전 PZT 박막을 형성시켜 유전특성과 전도기구를 조사하였다. 또한 PZT 박막 내의 carrier를 보상해주기위해 도너 불순물을 도핑하였다. 2단계 스퍼터링으로 상온층 두에를 조절하여 누설전류를 $10^{-7}A/cm^2$ order까지 줄일 수 있었다. 전도기구가 bulk-limited의 하나임을 확인하였고 따라서 적정한 도너 불순물을 채택하였다. 도너 불순물을 도핑한 경우 2단계 스퍼터링한 PZT 박막의 누설전류 특성은 $10^{-8}A/cm^2$ order까지 개선되었다.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.32-36
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• 2017

The Ag thin film of YBCO (yttrium barium copper oxide) CC (coated conductor) protect the YBCO layer and, at the same time, affects the electrical characteristics of the YBCO CC. Therefore, YBCO CC with the commercialization of the Ag thin film layers makes it easy to establish a process, it can lead to a variety of characteristic changes in YBCO CC. In this paper, plasma surface treatment was carried out to facilitate the deposition of the Ag thin film and the deposition process of YBCO CC. Surface roughness from the test results was increased as the time of the plasma surface treatment increased from 5 to 20 minutes. On the other hand, the surface roughness was decreased for the time of the plasma surface treatment over 20 minutes. Furthermore, after depositing, the increasing of deposit amount and reduced lifting phenomenon showed a similar tendency with the rise time of surface roughness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.

• 한국재료학회지
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• 제6권7호
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.287-290
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• 2003

For microwave device applications, c-axis oriented high temperature superconducting YBa$_2$Cu$_3$O$_{7-{\delta}}$ (HTS-YBCO) epitaxial thin films on the r-cut sapphire substrate(Al$_2$O$_3$) were prepared. In order to reduce the lattice mismatch with a substrate and to enhance the crystallity of HTS thin films, CeO$_2$ buffer layer on the r-cut sapphire substrate was grown by the RF-magnetron sputtering. The YBCO films on the CeO$_2$ buffer layer were deposited using the pulsed-laser deposition (PLD) method. These HTS YBCO /CeO$_2$/Al$_2$O$_3$ multilayer thin films(30 $\times$ 30 mm$^2$) routinely exhibited a critical temperature(T$_{c}$) of 89 K from the R-T measurement. Using HTS YBCO/CeO$_2$ /Al$_2$O$_3$ multilayer thin film. We fabricated and characterized the microwave passive devices (planar type filters) with cryopack-age such as the coupled -line type low-pass filter (LPF) and the open-loop meander type bandpass filter (BPF).filter (BPF).).

• 한국표면공학회지
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• 제53권4호
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• pp.190-199
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• 2020

Copper pyrophosphate baths were employed in order to study the dependencies of current efficiency, residual stress, surface morphology and microstructure of electrodeposited Cu thin layers on applied current density. The current efficiency was obtained to be more than about 90 %, independent of the applied current density. Residual stress of Cu electrodeposits was measured to be in the range of -30 MPa and 25 MPa with the increase of applied current density from 0.5 to 15 mA/㎠. Relatively smooth surface morphologies of the electodeposited Cu layers were obtained at an intermediate current range between 3 and 4 mA/㎠. The Cu electrodeposits showed FCC(111), FCC(200), and FCC(220) peaks and any preferred orientation was not observed in this study. The average crystalline size of Cu thin layers was measured to be in the range of 44~69 nm.

• 한국세라믹학회지
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• 제52권5호
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• pp.304-307
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• 2015

To reduce the lateral conduction loss of thin-film-processed cathodes, the microstructure of the thin-film cathode is engineered to contain a denser bridging layer in the middle. By doing so, the characteristic crack-like pores that separate the cathode domains in thin-film-processed cathodes and hamper lateral conduction are better connected and, as a result, the sheet resistance of the cathode is effectively reduced by a factor of 5. This induces suppression of the lateral conduction loss and expansion of the effective current collecting area; the cell performance is improved by more than 30%.