• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.109-110
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• 2008

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.101-101
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.17.1-17.1
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• 2007

• Proceedings of the Korea Water Resources Association Conference
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• 2005.09b
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• pp.902-903
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.39-39
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• 1992

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1483-1490
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• 2011

The protection effect of a $ZrO_2$ coating layer on a $LiCoO_2$ thin film was characterized. A wide and smooth $LiCoO_2$ thin film offers sufficient opportunity for careful observation of the reaction at the interface between cathode (coated and uncoated) and electrolyte. The formation of a $ZrO_2$ coating on a $LiCoO_2$ thin film was confirmed by secondary ion mass spectrometry. Scanning electron and atomic force microscopy were used to characterize the surface morphologies of coated and uncoated films before and after cycling. A $ZrO_2$-coated $LiCoO_2$ film showed a higher discharge capacity and rate capability than an uncoated film. This may be associated with a surface protection effect of the coating. The surface of a pristine film was damaged during cycling, whereas the coated film maintained a relatively clear surface under the same measurement conditions. This result clearly demonstrates the protection effect of a $ZrO_2$ coating on a $LiCoO_2$ thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Structural Engineering and Mechanics
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• v.36 no.3
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• pp.363-380
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• 2010

Materials which exhibit different elastic moduli in tension and compression are known as bimodular materials. The bimodular materials model, which is founded on the criterion of positive-negative signs of principal stress, is important for the structural analysis and design. However, due to the inherent complexity of the constitutive relation, it is difficult to obtain an analytical solution of a bimodular bending components except in particular simple problems. Based on the existent simplified model, this paper solves analytically bending thin plates with different moduli in tension and compression. By using the continuity conditions of stress components in unknown neutral layer, we determine the location of the neutral layer, and derive the governing differential equation for deflection, the flexural rigidity, and the internal forces in the thin plate. We also use a circular thin plate with bimodulus to illustrate the application of this solution derived in this paper. The results show that the introduction of different moduli has influences on the flexural stiffness of the bending thin plate.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.5
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• pp.697-702
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• 2011

In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. In the electrical characteristic results with deposition pressures and substrate RF bias power in thin film deposition process, we have got dielectric constant of 3.4, high deposition rate of 8.6 [nm/min] and high insulation characteristics in condition of RF100 [W], Ar20 [sccm], 5 [mtorr], RF bias 20 [W]. Therefore, the fabricated thin films are possible as insulation layer of OTFT and organic memory.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator