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http://dx.doi.org/10.13067/JKIECS.2011.6.5.697

Electrical Characteristic of PMMA Thin Film by Plasma Polymerization Method with Process Pressure and RF Substrate Bias Power  

Lee, Boong-Joo (남서울대학교 전자공학과)
Publication Information
The Journal of the Korea institute of electronic communication sciences / v.6, no.5, 2011 , pp. 697-702 More about this Journal
Abstract
In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. In the electrical characteristic results with deposition pressures and substrate RF bias power in thin film deposition process, we have got dielectric constant of 3.4, high deposition rate of 8.6 [nm/min] and high insulation characteristics in condition of RF100 [W], Ar20 [sccm], 5 [mtorr], RF bias 20 [W]. Therefore, the fabricated thin films are possible as insulation layer of OTFT and organic memory.
Keywords
plasma polymerization method; MMA; OTFT(organic thin film transistor);
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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